Nuclear shell structure nano-metal interconnection process

Abstract

The invention provides a nuclear shell structure nano-metal interconnection process. The nuclear shell structure nano-metal interconnection process comprises the steps that (A), nuclear shell structure nano-particle interconnection materials are printed on a base plate, the nuclear shell structure nano-particle interconnection materials comprise nano-copper particles wrapped by a metal shell layer, and the metal is one or several kinds selected from gold, silver, tin, platinum and palladium; (B), a chip is covered on the surface of the nano-particle interconnection materials, and a whole device is obtained; (C), the whole device is sintered, and an interconnection device is obtained. According to the nuclear shell structure nano-metal interconnection process, the shell layer metal in the nano-copper particles wrapped by the metal shell layer is compact in form, uniform and controllable in size, prone to generate atomic diffusion at low temperature and is connected with the nuclear layer nano-copper particles together to form a three-dimensional interconnection system, the oxidation resistance and stability of nano copper are improved, the interconnection temperature and interconnection condition are further greatly lowered, by means of the nuclear shell structure nano-metal interconnection process, the chip can be interconnected with the base plate at low temperature without pressure, and connection and packaging of electronic devices are finished.

Description

Technical field [0001] The invention relates to the technical field of electronic packaging, in particular to a core-shell structure nano metal interconnection process. Background technique [0002] Electronic packaging technology is an extension of electronic manufacturing technology. The speed of its development and the technical level and production scale reached directly affect the development of the whole product or electronic system. The development power of electronic packaging technology comes from the upgrading of electronic products. One generation of products creates a new generation of technology. With the development trend of light, thin, short and small electronic products and the continuous update of microelectronics technology, electronic packaging technology is characterized by its high density and The characteristics of high performance are gradually entering a period of ultra-high-speed development, which also puts forward higher requirements for the interconne...

AI Technical Summary

Problems solved by technology

On the one hand, the high interconnection temperature will pose severe challenges to the heat resistance of interconnection equipment, electronic components and substrate materials. For some electronic devices with poor heat resistance, it is easy to cause device damage at high interconnection temperatures; and, for Some special electronic products such as solar film, LED, LCD, temperature control components, etc. must be interconnected at low temperature; on the other hand, high interconnection temperature is not conducive to energy saving and emission reduction, and the interconnection and packaging of electronic components is the main industry, high-temperature interconnection is bound to cause considerable problems to the energy environment

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