Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A resist composition with good hole masking function that can directly describe exposure imaging

A technology of resist and composition, applied in the direction of photosensitive materials, optics, and opto-mechanical equipment used in opto-mechanical equipment, can solve the problem of deterioration of film mechanical strength, reduction of resist thickness, and deterioration of masking performance, etc. problems, to achieve the effect of improving flexibility, excellent photosensitivity, and improving the masking performance of the film layer

Active Publication Date: 2021-08-10
HANGZHOU FIRST ELECTRONIC MATERIAL CO LTD
View PDF9 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to improve the resolution, reducing the thickness of the resist layer is a way, but reducing the thickness of the resist will make the mechanical strength of the cured film worse and the hole-masking performance worse.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A resist composition with good hole masking function that can directly describe exposure imaging
  • A resist composition with good hole masking function that can directly describe exposure imaging
  • A resist composition with good hole masking function that can directly describe exposure imaging

Examples

Experimental program
Comparison scheme
Effect test

Synthetic example

[0064] Synthesize the compound represented by general formula (I):

[0065] 1mol of phthalic anhydride, 0.20mol of butanol, 4.44g of p-toluenesulfonic acid were added to the reactor, 100mL of xylene, a thermometer, a water separator and a reflux condenser were installed, and the mixture was stirred and heated to reflux for 2.5h. Then 1 mol of ethylene glycol was added, and reflux was continued for 4 h. Next, at the reflux temperature, a mixed solution of 1.05 mol of acrylic acid and 0.02 mol of thiophenazine was added dropwise to the reactor for about 2 hours. After the dropwise addition, the temperature was kept for 5 hours. Then it was cooled to 40°C, extracted with about 150 mL of 5% sodium hydroxide, and the aqueous phase was removed. The organic phase was then extracted and washed with 150 mL of water for 2 to 3 times. The organic phase was dried with sodium carbonate, filtered, and 0.107 g of p-hydroxybenzene was added. Methyl ether was distilled off under reduced press...

Embodiment 1-5、 comparative example 1-2

[0073] Examples 1-5 and Comparative Examples 1-2 respectively provide a resist composition, the specific formula of which is shown in Table 1.

[0074] Table 1: Formulation table of resist compositions of different examples and comparative examples

[0075]

[0076] Remark:

[0077] 1. Alkali-soluble copolymer resin A-1~A-3

[0078] A-1: methacrylic acid / methyl methacrylate / hydroxyethyl methacrylate / styrene=17 / 72 / 6 / 5, weight average molecular weight is 82,000, solid content is 40%, acid value is 110.1 mgKOH / g dry resin. (Dry resin represents the resin after deducting the solvent, the same applies hereinafter).

[0079] A-2: methacrylic acid / methyl methacrylate / hydroxyethyl methacrylate / styrene=23 / 59 / 6 / 12, weight average molecular weight is 97,000, solid content is 40%, acid value is 150mgKOH / g dry resin.

[0080] A-3: methacrylic acid / methyl methacrylate / butyl acrylate / hydroxyethyl methacrylate / styrene=30 / 34 / 10 / 6 / 20, weight average molecular weight is 127,000, solid c...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
acid valueaaaaaaaaaa
thicknessaaaaaaaaaa
acid valueaaaaaaaaaa
Login to View More

Abstract

The invention discloses a resist composition which has good hole masking function and can directly describe exposure imaging, which comprises 50-65 parts by weight of an alkali-soluble copolymer resin, 35-50 parts by weight of a photopolymerizable compound and 0.5-7 The photoinitiator of weight part, and the total amount of alkali-soluble copolymer resin and photopolymerizable compound is 100 weight part; Wherein, photopolymerizable compound is by mass content be 5~30% (meth) acrylate compound and mass content It is composed of 70-95% compounds with vinyl unsaturated bonds in the molecular structure formula. When the resist composition of the present invention is used for direct drawing exposure, it has excellent comprehensive properties such as photosensitivity, resolution and hole capping, and can efficiently form fine resist patterns and manufacture high-definition printed circuits plate.

Description

technical field [0001] The present invention relates to a resist for printed circuit boards, in particular to a resist composition that can be used for hole-covering and can be directly drawn and imaged by exposure. Background technique [0002] There are two main methods of manufacturing printed circuit boards: mask method and pattern plating method. The mask method uses a protective layer to protect the copper vias used to mount the contacts, and then etch and remove the film to form a circuit. The pattern electroplating method electroplates copper in the through holes by electroplating, and then protects it by tinning and soldering, and then forms a circuit through film removal and etching. [0003] In the mask method, a through hole of a substrate or a via hole for interlayer connection is covered with a resist composition to protect the metal in the hole from being etched. In this method, alkali development using an aqueous solution of sodium carbonate or potassium ca...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): G03F7/027G03F7/004
CPCG03F7/004G03F7/027
Inventor 李志强朱薛妍李伟杰周光大林建华
Owner HANGZHOU FIRST ELECTRONIC MATERIAL CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products