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Method for Inductively Coupled Plasma Deposition of Diamond

A plasma and inductive coupling technology, applied in the field of diamond deposition, can solve the problems of low power, difficult deposition, and high edge temperature, and achieve the effects of avoiding metal ion pollution, uniform atomic concentration distribution, and improving consistency

Active Publication Date: 2019-07-30
CHINA BUILDING MATERIALS ACAD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, there are very few subsequent reports on the deposition of diamond by ICPCVD, and this method has not been effectively applied.
This is due to its insurmountable shortcomings: First, the inductively coupled high-frequency plasma has a skin effect, that is, the plasma edge temperature is higher and the center temperature is lower, resulting in uneven diamond deposition thickness, making it difficult to deposit a large amount
Therefore, the frequency of the inductively coupled plasma used in the existing research is greater than 4MHz
Second, due to the low power (all less than 60kW, it is difficult to achieve higher power), the diameter of the existing inductively coupled plasma is small (less than 76mm), so it is difficult to prepare large-area diamond materials

Method used

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Embodiment 1

[0026] One embodiment of the present invention provides a method for inductively coupled plasma deposition of diamond. An inductively coupled high-frequency plasma with a rated power of 200kW was used as the heat source, and the working frequency was set at 8MHz. The array of small holes at the exit of the splitter is 6 rings, the diameter of which is 2mm, and the gas flow ratio of two adjacent ring arrays is 1.2, 1.4, 1.8, 2.6, 3.6, 4.5 from the inside to the outside. The diameter of the quartz glass tube is 180mm, the base material is molybdenum, the diameter is 150mm, and it is fixed on the base after being polished and seeded. By adjusting the quartz glass tube, the angle between the plasma axis and the surface of the deposition substrate is 90°, the rotational speed of the deposition substrate is set at 20 rpm, and the distance from the nozzle of the plasma generator is 10 cm. Vacuum to low pressure 10 -2 After Pa, it was washed with Ar for three times. Turn on the pla...

Embodiment 2

[0028] One embodiment of the present invention provides a method for inductively coupled plasma deposition of diamond. An inductively coupled high-frequency plasma with a rated power of 200kW was used as the heat source, and the operating frequency was set at 2MHz. The small hole array at the outlet of the splitter is 4 rings, the diameter of the small hole is 1mm, the gas flow ratio of the two adjacent ring arrays is 1.2, 1.5, 2.1, 3.1 from the inside to the outside, and the diameter of the quartz glass tube is 120mm, made of molybdenum It is the matrix material with a diameter of 100mm, which is fixed on the base after being polished and seeded. By adjusting the quartz glass tube, the angle between the plasma axis and the surface of the deposition substrate is 20°, the rotational speed of the deposition substrate is set at 5 rpm, and the distance from the nozzle of the plasma generator is 12 cm. Vacuum to low pressure 10 -2 After Pa, it was washed with Ar for three times. ...

Embodiment 3

[0030] One embodiment of the present invention provides a method for inductively coupled plasma deposition of diamond. An inductively coupled high-frequency plasma with a rated power of 200kW was used as the heat source, and the operating frequency was set at 2MHz. The small hole array at the outlet of the splitter is 10 rings, and the diameter of the small hole is 3mm. The gas flow ratio of two adjacent ring arrays is 1.2, 1.2, 1.2, 1.3, 1.3, 1.6, 1.9, 2.3, 3 from the inside to the outside. , 4. The diameter of the quartz glass tube is 330mm, the base material is molybdenum, the diameter is 300mm, and it is fixed on the base after being polished and seeded. By adjusting the quartz glass tube, the angle between the plasma axis and the surface of the deposition substrate is 50°, the rotational speed of the deposition substrate is set at 30 rpm, and the distance from the nozzle of the plasma generator is 8 cm. Vacuum to low pressure 10 -2 After Pa, it was washed with Ar for t...

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Abstract

The invention relates to a method for depositing diamond by using inductively coupled plasma. According to the method, a gas mixture of argon gas, hydrogen gas and methane is used as plasma source gasand enters a gas diverter through a gas flow controller; high-frequency equipment with input power of no less than 100 kW is used for providing a high-frequency oscillating current with a frequency of 1-8 MHz, so a high-frequency electromagnetic field is generated, and high-frequency plasma is formed; and the high-frequency plasma enters a deposition system to heat a deposition substrate so as toobtain deposited diamond, wherein the outlets of the gas diverter are an array of annularly distributed small holes. The method of the invention utilizes high-power inductively coupled high-frequencyplasma as an activation heat source, employs chemical vapor deposition for preparation of the diamond, and prepares the large-area high-quality diamond at a high rate.

Description

technical field [0001] The invention relates to a method for depositing diamond, in particular to a method for inductively coupled plasma depositing diamond. Background technique [0002] Diamond has excellent physical and chemical properties, such as the highest hardness, high thermal conductivity at room temperature, low thermal expansion coefficient, almost full-band transparency from vacuum ultraviolet to far infrared, the highest elastic modulus and longitudinal wave sound velocity, low dielectric constant, Wide bandgap and excellent chemical stability are excellent semiconductor materials, window materials and wear-resistant structural materials, and have broad application prospects in the fields of electronics, optics, machinery, lasers and acoustics. [0003] At present, the methods of artificially synthesizing diamond mainly include hot pressing method and chemical vapor deposition (CVD) method. The current CVD diamond deposition techniques mainly include: hot wire...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/27C23C16/513C23C16/52
CPCC23C16/276C23C16/513C23C16/52
Inventor 孙元成宋学富杜秀蓉张晓强
Owner CHINA BUILDING MATERIALS ACAD