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A method for preparing silicon grooves by PDMS masking technology

A silicon groove and technology technology, which is applied in the field of silicon groove preparation by PDMS masking technology, can solve the problems of wafer damage, inability to clean up, high cost, and achieve the effect of simple process

Active Publication Date: 2020-09-25
DALIAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0006] However, the use of silicon dioxide and silicon nitride as the mask layer is often costly, and it cannot be removed after the etching process, causing damage to the wafer, causing problems such as debris, and affecting other subsequent processes.

Method used

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  • A method for preparing silicon grooves by PDMS masking technology
  • A method for preparing silicon grooves by PDMS masking technology
  • A method for preparing silicon grooves by PDMS masking technology

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Embodiment 1

[0034] Such as figure 1 As shown, the preparation method with photosensitive PDMS layer of the present embodiment comprises the following steps:

[0035] 1. Preparation of the substrate for the PDMS masking layer

[0036] After cleaning the silicon wafer substrate 2 with deionized water, heating to remove moisture;

[0037] The PDMS mixture is formed by mixing the PDMS matrix and the curing agent at a ratio of 10:1. After stirring evenly, vacuumize at about 50Pa for about 6 minutes to remove the bubbles in the PDMS solution. This mixture is called non-photosensitive PDMS; the benzene Methanone crystals are dissolved in xylene to form a benzophenone solution; non-photosensitive PDMS and benzophenone are mixed at a mass ratio of 33:1, and the mixing time is 15 minutes to form a PDMS solution sensitive to ultraviolet light. Vacuum down for about 6 minutes; this mixture is called photosensitive PDMS;

[0038] The prepared photosensitive PDMS is spin-coated on the upper side of ...

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Abstract

The invention belongs to the field of semiconductor manufacturing process and relates to a method for preparing a silicon trench based on a PDMS masking technique. The method comprises the following steps: preparing a silicon wafer substrate having a PDMS masking layer, etching the silicon trench and removing the masking layer; spin coating photosensitive PDMS on the front surface of the silicon wafer substrate; carrying out clearance exposure through a mask, and then, carrying out baking and curing, wherein the unexposed part of the photosensitive PDMS is cured, and the exposed part of the photosensitive PDMS is kept in an original state; soaking the uncured PDMS in methylbenzene to remove the uncured PDMS; rinsing the substrate with isopropyl alcohol, and then, carrying out drying with nitrogen and finishing patterning of the masking layer; spin coating non-photosensitive PDMS on the back surface of the silicon wafer substrate, and carrying out drying; placing the silicon wafer substrate into a 35%-45% KOH solution for etching; and placing the silicon wafer substrate obtained after finishing etching into concentrated sulfuric acid, and then, carrying out boiling to remove the masking layer, and thus the silicon trench is obtained. The method adopts the PDMS as the masking layer to prepare the silicon trench, is simple in preparation process, low in cost and good in process repeatability, and is easy to realize.

Description

technical field [0001] The invention belongs to the field of semiconductor manufacturing technology, and relates to a method for preparing silicon grooves by PDMS masking technology. Background technique [0002] PDMS (polydimethylsiloxane), referred to as organosilicon, is the English abbreviation of polydimethylsiloxane. It is low in cost, easy to use, and has good adhesion to silicon wafers. Moreover, the polydimethylsiloxane Chemical state Simethicone oil, colorless or light yellow liquid, odorless, high transparency, heat resistance, cold resistance, small viscosity change with temperature, small surface tension, thermal conductivity, thermal conductivity is 0.134-0.159W / M *K, light transmittance is 100% light transmittance, simethicone oil is non-toxic, tasteless, physiologically inert, and has good chemical stability. It has good electrical insulation, weather resistance, hydrophobicity, and high shear resistance, and can be used for a long time at -50°C to 200°C. W...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/306H01L21/308
CPCH01L21/30604H01L21/3081
Inventor 邹赫麟王秋森黎晨杨正
Owner DALIAN UNIV OF TECH