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Polysilicon Full Melting Ingot Casting Technology and Its Crucible

A technology of polysilicon and crucible, which is applied in the direction of polycrystalline material growth, crystal growth, single crystal growth, etc., can solve the problems of reducing the average lifetime of few carriers, affecting polysilicon ingots, polysilicon defects, etc., and achieves few defects, high yield, and production high efficiency effect

Active Publication Date: 2020-10-27
SHANDONG DAHAI NEW ENERGY DEV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The polysilicon ingot casting process includes putting the silicon material into the crucible for ingot casting, but the temperature of the ingot is high, and the impurities in the crucible are easy to enter the polysilicon ingot to cause polysilicon defects and reduce the average life of the minority.
Spraying silicon nitride on the surface of the crucible can prevent some impurities from entering the polysilicon ingot, but the quality of the silicon nitride layer will also affect the quality of the crystal growth or the silicon nitride will fall off during the ingot casting process, causing the polysilicon ingot to stick to the pot

Method used

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  • Polysilicon Full Melting Ingot Casting Technology and Its Crucible
  • Polysilicon Full Melting Ingot Casting Technology and Its Crucible
  • Polysilicon Full Melting Ingot Casting Technology and Its Crucible

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0055] Embodiment 1 prepares the raw material of polysilicon ingot

[0056] The raw material for preparing polysilicon ingots is a mixture of primary polysilicon and polysilicon ingot recycling materials. Polysilicon ingot recycling materials include fragments generated during polysilicon ingot casting, polysilicon ingot heads, polysilicon ingot tails, purified silicon blocks and scraps . Table 1 shows the compositions of silicon materials 1# to 3#, comparative silicon materials D1# and comparative silicon materials D2# used in the polysilicon ingot in this embodiment.

[0057] Table 1

[0058]

Embodiment 2

[0059] Example 2 Ingot Crucible and Silicon Material Arrangement Rules

[0060] Put silicon materials 1#-3# in Example 1, comparative silicon materials D1#, D2# into quartz crucibles 1#-3# respectively, and compare crucibles D1#, D2# for polysilicon ingot casting. The filling rules of the silicon material in the quartz crucible are as follows: spread the high-purity crystal seeds on the bottom of the quartz crucible, then put a layer of reduced polysilicon, place a large piece of recycled material in the center, place the reduced polysilicon in the gaps and upper part of the surrounding area, and place the recycled silicon material in the quartz crucible. The middle of the crucible is not in contact with the quartz crucible. The specific parameters of the crucible are shown in Table 2. Taking crucible 1# as an example to illustrate the roughness of the crucible is as follows: figure 1 shown.

[0061] Table 2

[0062]

Embodiment 3

[0063] Embodiment 3 polysilicon ingot casting process

[0064] Put the silica crucible filled with silicon material in Example 2 into a polysilicon ingot furnace for polysilicon ingot casting. Put silicon material 1#-3#, comparative silicon material D1# and comparative silicon material D2# in Example 1 into crucibles 1#-3#, comparative crucible D1#, and comparative crucible D2# respectively to make ingots 1-3#, ingot D1# and ingot D2#.

[0065] Put the crucible containing the silicon material in Example 2 into a polysilicon ingot furnace for polysilicon ingot casting. The polysilicon ingot casting furnace includes an evacuation system, a heating system, a temperature measurement system, an insulation layer lifting system, and a pressure control system. Taking ingot 1# as an example to illustrate the polysilicon ingot casting process, the polysilicon ingot casting includes the following steps:

[0066] 1) Charging stage: Fill the silicon material into the crucible, and trans...

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Abstract

The invention discloses a polycrystalline silicon fine melt ingot making process and a crucible thereof, and belongs to the technical field of photovoltaics. The polycrystalline fine melt ingot makingcrucible comprises a crucible body, quartz sand and a first demould layer, wherein the quartz and the first demould layer are sequentially fixed at the inner bottom of the crucible, and the inner side surface of the crucible body is coated with a second demould layer. Both the first demould agent and the second demould agent comprise silicon nitride. The crucible can prevent the oxidation of polycrystalline silicon and prevent the polycrystalline silicon ingot from sticking on the bottom. The loose and rough surface at the bottom of the crucible provides a variety of seeding methods, with quartz sand nucleation, slit nucleation, and silicon nitride nucleation. The combination of multiple seedings shortens the cycle of the polycrystalline ingot making, and the yield of polycrystalline ingot making is high.

Description

technical field [0001] The application relates to a polysilicon full-melting ingot casting process and a crucible used therefor, belonging to the field of photovoltaic technology. Background technique [0002] Using the photovoltaic effect principle of sunlight to convert light energy into electrical energy at the semiconductor interface is the best way to utilize solar energy. In addition to being free from geographical restrictions, photovoltaic power generation has the advantages of low pollution, no noise, easy short-term construction, safe and reliable performance, and simple practical application. The key foundation of the photovoltaic industry is to use solar cells that have been connected in series and packaged to protect them to form large-scale components, and then form a solar photovoltaic power generation system with other control components. [0003] There are many kinds of materials for making solar cells, which can be divided into the following categories acc...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/06C30B35/00C30B28/06
CPCC30B28/06C30B29/06C30B35/002
Inventor 张军华刘东王振刚王佳
Owner SHANDONG DAHAI NEW ENERGY DEV