Preparation method for composite conductive film doped with tin oxide

A composite conductive and tin oxide technology, which is used in the manufacture of conductive/semiconductive layer equipment, cable/conductor manufacturing, circuits, etc., can solve the problems of poor conductivity of tin oxide films, etc., and achieve good conductive effect and firm adsorption , the effect of increasing the carrier concentration

Inactive Publication Date: 2018-10-02
YANCHENG INST OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The purpose of the present invention is to solve the problem of poor conductivity of tin oxide films in the prior art, and provide a preparation method for doped tin oxide composite conductive films.

Method used

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  • Preparation method for composite conductive film doped with tin oxide
  • Preparation method for composite conductive film doped with tin oxide

Examples

Experimental program
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Embodiment 1

[0026] A preparation method of doped tin oxide composite conductive film, comprising the steps of:

[0027] (1) SnCl 4 1. The dopant is dissolved in an organic solvent to obtain a mixed solution; the dopant is yttrium nitrate-antimony trichloride, the molar ratio of the two is 0.4:1, and the dopant and SnCl 4 The molar ratio is 1:50, SnCl 4 The concentration is 0.5mol / L, and the organic solvent is a mixture of ethanol and dimethylformamide with a volume ratio of 1:1;

[0028] (2) After the mixed solution of step (1) is left to stand for 12h, add graphene, graphene and SnCl 4 The mass ratio of the mixture is 0.025:100, the ultrasonic dispersion is uniform, and the mixed solution containing graphene is obtained;

[0029] (3) Step (1) is repeated to prepare a graphene-free mixed solution, and the graphene-containing mixed solution obtained in step (2) is passed through an ultrasonic spray pyrolysis coating machine (substrate temperature is 390 ° C, liquid injection Speed: 20m...

Embodiment 2

[0031] The dopant is yttrium nitrate-antimony trichloride, the molar ratio of the two is 0.8:1, and the rest are the same as in Example 1.

Embodiment 3

[0033] Dopant and SnCl in the step (1) 4 Molar ratio is 1:25, and all the other are identical with embodiment 1.

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Abstract

The invention relates to a preparation method for a composite conductive film doped with tin oxide, and the method comprises the steps: preparing mixed liquid of SnCl4, a dopant and an organic solvent, adding graphene to the mixed liquid for ultrasonic dispersion after the mixed liquid is placed quietly, coating the surface of the substrate with the mixed liquid through an ultrasonic spray pyrolysis coating machine, spraying the mixture containing no graphene, placing the substrate in an argon atmosphere for annealing under the temperature of 500 DEG C to obtain a tin oxide conductive film. The method solves a problem that the conductivity of the tin oxide conductive film is lower, employs simple equipment, and is easy to control. The prepared conductive film is uniform in surface, is compact in structure, is good in conductivity, and is firmly combined with the substrate.

Description

technical field [0001] The invention relates to a preparation method of a tin oxide-doped composite conductive film, which belongs to the field of inorganic non-metallic materials. Background technique [0002] As a new green and energy-saving material, conductive film has attracted the attention of various industries. Due to its good electrical conductivity and high visible light transmittance, it is widely used in electronic display screens, solar cells and other fields. The oxide film dominates the conductive film, such as SnO 2 film. SnO 2 It is an n-type semiconductor with tetragonal rutile structure, which has the characteristics of good chemical stability and optical anisotropy. SnO 2 The excess Sn atoms in the interior act as donors, making SnO 2 Thin films are conductive. However, SnO 2 The electrical conductivity of the film is very low. [0003] In order to improve SnO 2 Conductive properties of conductive films, often in SnO 2 Elements such as Sb, In, ...

Claims

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Application Information

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IPC IPC(8): H01B13/00
CPCH01B13/0026
Inventor 朱凯何寿成侯海军戴海璐吴其胜
Owner YANCHENG INST OF TECH
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