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A preparation method of diamond microchannel heat sink for ultra-high heat flux heat dissipation

A heat flux density, diamond technology, applied in the direction of metal material coating process, coating, circuit, etc., to achieve the effect of high dimensional accuracy, good temperature control effect, uniform and dense thick film

Active Publication Date: 2020-05-19
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the CVD diamond film required to make micro-channels must have sufficient thickness (usually above 3 mm), which is extremely challenging for the CVD technology commonly used to deposit diamond films.

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] The diamond ultra-thick film is grown on the high-temperature molybdenum substrate by CVD method, and the composite transition layer is plated on the molybdenum substrate. The substrate size is: diameter 100mm, thickness 50mm. Substrate processing parameters: Grind with diamond abrasive paste with a particle size of 0.5 μm for 5 minutes, rinse with acetone twice. Diamond film deposition parameters: deposition temperature is 880°C, distance between substrate and anode is 1cm, deposition pressure is 3.0Kpa, cooling water temperature is ≤25°C, Ar flow rate is 4.0SLM, H 2 The flow rate is 7.8SLM, CH 4 The flow rate is 110SCCM, every growth 100h, the CH 4 Increase the flow rate to 130SCCM, nucleate for another 10min, and then close CH 4 , keep H 2 / Ar plasma treatment for 10 min. Then set the CH 4 Flow to 110SCCM to continue to grow for 100h. Until the deposition time is 450 h, a diamond thick film with a thickness of 4 mm is finally obtained. Use a grinding and polis...

Embodiment 2

[0038] The high-temperature molybdenum substrate with a composite transition layer was ground for 15 min with diamond abrasive paste with a particle size of 5 μm, and rinsed twice with acetone. Put the processed substrate into a high-energy activated plasma chamber to prepare a diamond film. The distance between the anode and the substrate is 1.1cm, the deposition temperature is 950°C, the deposition pressure is 3.5Kpa, the cooling water temperature is ≤25°C, and the Ar flow rate is 3.8 SLM, H 2 Flow is 7SLM, CH 4 The initial growth flow rate is 120SCCM, and CH 4 Increase the flow rate by 20SCCM, and close the CH after 10 minutes of nucleation 4 , keep for 15min. Then call back CH 4 to growth flow. After growing for 500 h, a diamond film with a thickness of 5 mm was obtained. The obtained diamond thick film is ground and polished by a grinding and polishing machine, and the thickness after polishing is 3.5 mm. The particle size of the diamond abrasive is 400#, the rotat...

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Abstract

The invention relates to a preparation method of a diamond micro-channel heat sink for superhigh heat flux cooling, and belongs to the field of semiconductor device cooling. The method comprises the steps: employing the special substrate technology and the improved CVD preparation technology for preparing a high-quality, no-crack and super-thick diamond self-supporting membrane; controlling the surface roughness of the super-thick diamond membrane through the mechanical grinding and polishing according to the requirements of a thermal contact interface; employing the unique laser processing technology for achieving the fixing of the structure size of the super-thick diamond membrane, carrying out the micro-channel engraving on the surface through a laser micro-beam flow, obtaining a diamond micro-channel heat exchanger with the size being matched with the groove type, and enabling the diamond micro-channel heat exchanger to meet the design requirements of a high heat flux heat exchangefor dissipation. The micro-channel heat sink can be used for the heat dissipation of a high-power-consumption electronic device of spatial loads, such as a phased array radar, a satellite, and a large-scale spacecraft.

Description

technical field [0001] The invention belongs to the field of heat dissipation of high heat flux electronic devices, and in particular provides a method for preparing a diamond microchannel heat sink for ultrahigh heat flux heat dissipation. Processing and construction of fluid microchannels, combining the high thermal conductivity of diamond with the heat dissipation design of microchannel liquid cooling, realizes the dissipation of high heat flux density of devices, and can be used for high power in space loads such as phased array radars, satellites, and large spacecraft. Heat dissipation of electronic devices. Background technique [0002] With the continuous improvement of the function and operation speed of electronic devices, as well as the acceleration of the trend of miniaturization and integration of devices, the heat flux generated by electronic devices during operation has risen rapidly. The heating problem of the device seriously affects the reliability of its w...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L23/373C23C16/27C23C16/513
CPCC23C16/276H01L23/373
Inventor 魏俊俊齐志娜李成明陈良贤刘金龙张建军高旭辉
Owner UNIV OF SCI & TECH BEIJING
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