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Short-process preparation method of indium gallium zinc oxide tubular target material

A short-process technology of indium gallium zinc oxide, which is applied in the field of short-process preparation of indium gallium zinc oxide tubular targets, can solve the problem of poor sintering and densification performance of IGZO, coarse and low crystal grains of tubular targets, and slight vibration, etc. problems, to achieve the effect of shortening the sintering time, shortening the preparation time and improving the yield

Active Publication Date: 2018-10-26
ZHENGZHOU UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as disclosed in patent documents CN201410068331.9, CN201210424320.0, etc., after the degreasing process of the cold-pressed green body of the IGZO target is completed, the strength of the green body is very low, and a slight vibration will cause breakage or cracks. Once this defect occurs , due to the poor sintering and densification performance of IGZO, it will remain in the final tubular target; and sintering at high temperature and normal pressure (can withstand 1kg / cm 2 ), high-concentration and high-flux oxygen atmosphere, if the oxygen flux is above 30L / min, the sintering temperature is above 1600°C, and the sintering time can reach 12 hours, the result will be that the tubular target has coarse grains, low strength and oxygen waste, rather than a real pressureless sintering process, so the sintering device is complicated, the sintering cost is high, and the product quality is low

Method used

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  • Short-process preparation method of indium gallium zinc oxide tubular target material
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  • Short-process preparation method of indium gallium zinc oxide tubular target material

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Embodiment 1

[0051] In this embodiment 1, the short-process preparation method of the indium gallium zinc oxide tubular target includes:

[0052] Mix 4.422kg of indium oxide powder, 2.985kg of gallium oxide powder and 2.593kg of zinc oxide powder by ball milling to obtain 10kg of mixed powder; the molar ratio of indium atoms, gallium atoms, and zinc atoms is 1:1:1 , the ball-to-material ratio of ball milling is 3:1, the quantity ratio of ball milling balls and ball milling balls is 2:1, and the diameters of ball milling balls and ball milling balls are 3mm and 0.5mm respectively;

[0053] Add slurry to the mixed powder, which includes water, 1% forming agent polyvinyl alcohol, 0.1% dispersant ammonium polyacrylate and 0.1% defoamer n-butanol, and continue ball milling for 4 hours to obtain slurry. The mass percent that the mixed powder accounts for is 42%;

[0054] Inject the slurry into the tubular gypsum mold by pump pressure, let it stand and solidify, and demold it; dry it in a consta...

Embodiment 2

[0061] In this embodiment 2, the short-process preparation method of the indium gallium zinc oxide tubular target is the same as the embodiment 1, wherein the sintering temperature is set to 1470°C.

[0062] Measure the relative density of the indium gallium zinc oxide tubular target in Example 2 by the Archimedes drainage method, measure the grain size with a scanning electron microscope (SEM), measure the shrinkage size of the upper and lower ports of the tubular target with a vernier caliper, and calculate the shrinkage The results are shown in Table 1.

Embodiment 3

[0064] In this embodiment 3, the short-process preparation method of the indium gallium zinc oxide tubular target is the same as the embodiment 1, wherein the sintering temperature is set to 1430°C.

[0065] Measure the relative density of the indium gallium zinc oxide tubular target in Example 3 by the Archimedes drainage method, measure the grain size with a scanning electron microscope (SEM), measure the shrinkage size of the upper and lower ports of the tubular target with a vernier caliper, and calculate the shrinkage The results are shown in Table 1.

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Abstract

The invention provides a short-process preparation method of an indium gallium zinc oxide tubular target material. The short-process preparation method comprises the following steps: ball milling anduniformly mixing indium oxide powder, gallium oxide powder and zinc oxide powder, and obtaining mixed powder; mixing the mixed powder and slurry, obtaining slurry, wherein the mass content of the mixed powder in the slurry is controlled to be between 30 and 50 percent; pouring the slurry into a tubular target mold, molding, demolding, drying, and obtaining the tubular target material biscuit; andintegrally degreasing and sintering the tubular target material biscuit, and obtaining the indium gallium zinc oxide tubular target material. By adopting the degreasing sintering integrated process, the sintering temperature is reduced, the sintering time is greatly shortened, rapidness in activation sintering is realized, the crystal growth is inhibited, the prepared indium gallium zinc oxide tubular target material is small in crystal grains and homogenous, the average crystal granularity is 4 to 5.6 micrometers, the density is high, the relative density is 99.6 percent or above, uniformityin shrinkage is realized, and the relative dimension shrinkage difference of an upper pipe orifice and a lower pipe orifice is not greater than 0.5 percent.

Description

technical field [0001] The application belongs to the technical field of metal oxide targeting materials, and in particular relates to a short-flow preparation method for indium gallium zinc oxide tubular targets. Background technique [0002] As a transparent amorphous oxide semiconductor (TAOSs) material for preparing the channel layer of high-performance thin-film transistors (TFTs), oxide semiconductor thin films have good low-temperature growth properties, simple preparation processes, high mobility and light transmittance, It has become the most promising next-generation display technology driving device and has been increasingly valued and developed. The reported TAOS-TFT channel layer material systems include: In-Ga-Zn-O, In-Zn-O, Sn-Zn-O, Al-Zn-Sn-O, In-Ti-Zn-O, etc. As a typical material of transparent amorphous oxide semiconductor α-IGZO, the conduction band of its thin film transistor is formed by overlapping S orbitals of metal ions, and the crystal type (polyc...

Claims

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Application Information

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IPC IPC(8): C04B35/01C04B35/64
CPCC04B35/01C04B35/64C04B2235/3284C04B2235/3286C04B2235/5436C04B2235/6562C04B2235/6565C04B2235/6585C04B2235/77
Inventor 孙本双何季麟舒永春曾学云陈杰李庆奎
Owner ZHENGZHOU UNIV