Fe nanometer dot @ BN nanospherecompound and preparation method and application thereof

A technology of nano dots and nano spheres, which is applied in nanotechnology, nanotechnology, nanotechnology for materials and surface science, etc., to achieve the effects of easy control, excellent electromagnetic absorption capacity, and simple preparation process conditions

Inactive Publication Date: 2018-11-06
HANGZHOU DIANZI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

After retrieval, Fe nanodots@BN nanosphere composite electromagnetic absorption materials have not been reported

Method used

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  • Fe nanometer dot @ BN nanospherecompound and preparation method and application thereof
  • Fe nanometer dot @ BN nanospherecompound and preparation method and application thereof
  • Fe nanometer dot @ BN nanospherecompound and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0037] will figure 1 The device shown is opened and tungsten is used as the cathode. The anode target material consumed is a block made of pure iron powder and boron powder (mass ratio 10:90), which is placed on a cooling water platform. Keep a distance of 30 mm between the cathode tungsten electrode and the anode target iron-boron powder block. During the whole process, the furnace body and anode placement platform are cooled by passing water. Place a liquid nitrogen cooling wall around the anode platform, and maintain a distance of 10 cm between the liquid nitrogen cooling wall and the anode target. After the entire working chamber is evacuated by the vacuum system, argon and nitrogen are introduced. The partial pressure of argon is 0.5 MPa and the partial pressure of nitrogen is 3.0 MPa. The DC power supply is connected and the voltage is 40 V. During the arc discharge process, the operating current and voltage are adjusted to be relatively stable. The Fe nanodot@BN nanosp...

Embodiment 2

[0039] will figure 1 The device shown is opened and tungsten is used as the cathode. The anode target material consumed is a block of pure iron powder and boron powder (mass ratio 20:80), which is placed on a cooling water platform. Keep a distance of 2 mm between the cathode tungsten electrode and the anode target iron-boron powder block. During the whole process, the furnace body and anode placement platform are cooled by passing water. Place a liquid nitrogen cooling wall around the anode platform, and keep a distance of 5 cm between the liquid nitrogen cooling wall and the anode target. After the entire working chamber is evacuated by the vacuum system, argon and nitrogen are introduced. The partial pressure of argon is 0.01 MPa and the partial pressure of nitrogen is 0.1 MPa. The DC power supply is connected and the voltage is 10 V. During the arc discharge process, the operating current and voltage are adjusted to be relatively stable. The Fe nanodot@BN nanosphere compo...

Embodiment 3

[0041] will figure 1 The shown device is opened and tungsten is used as the cathode. The anode target material consumed is a block of pure iron powder and boron powder (mass ratio 15:85), which is placed on a cooling water platform. Keep a distance of 10 mm between the cathode tungsten electrode and the anode target iron-boron powder block. During the whole process, the furnace body and anode placement platform are cooled by passing water. Place a liquid nitrogen cooling wall around the anode platform, and keep a distance of 7 cm between the liquid nitrogen cooling wall and the anode target. After the entire working chamber is evacuated by the vacuum system, argon and nitrogen are introduced. The partial pressure of argon is 0.1 MPa and the partial pressure of nitrogen is 1.0 MPa. The DC power supply is connected and the voltage is 20 V. During the arc discharge process, the operating current and voltage are adjusted to be relatively stable. The Fe nanodot@BN nanosphere compo...

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Abstract

The invention belongs to the technical field of nanophase material preparation, and provides a Fe nanometer dot @ BN nanosphere compound and preparation method thereof. The compound microstructure isthat the Fe nanometer dot is embedded in the BN nanosphere. The invention further discloses a preparation method for the Fe nanometer dot @ BN nanosphere compound. Plasma arc discharge method is adopted. Iron powder and boron powder are pessed into a block as an anode target material according to a certain percentage of atoms, tungsten is adopted as a cathode material, and argon and nitrogen are adopted as working gases; liquid nitrogen cooling stave is positioned around anode, certain distance is kept between cathode tungsten electrode and an anode iron-boron powder block; arc discharge is conducted between the anode and cathode; and the Fe nanometer dot @ BN nanosphere compound is obtained on the liquid nitrogen cooling stave, and a microwave absorption coating manufactured by the nanometer compound has excellent electromagnetic absorption property in the range of 2-18 GHz. The preparation process is simple, postprocessing is omitted, the cost is low and industrial production is easyto realize.

Description

Technical field [0001] The invention belongs to the technical field of material preparation, and specifically relates to an electromagnetic wave absorbing material of Fe nanodot@BN nanosphere composite and a preparation method thereof. Background technique [0002] With the rapid development of electromagnetic technology and the increasing miniaturization and high frequency of electronic components, electromagnetic waves of various frequency bands flood people's living space, causing serious electromagnetic pollution and attracting the attention of countries all over the world. Electromagnetic pollution has become the primary physical pollution of the ecological environment in the 21st century. Long-term exposure to electromagnetic radiation can increase the incidence of cancer and seriously affect human health. At the same time, electromagnetic interference has seriously affected the normal operation of electronic circuits and electronic components, causing irreparable economic...

Claims

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Application Information

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IPC IPC(8): B22F1/02B22F9/14B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00B22F9/14B22F1/054B22F1/07B22F1/16
Inventor 刘先国余洁意孙玉萍
Owner HANGZHOU DIANZI UNIV
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