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A hydrogen-rich PECVD process method for enhancing the hydrogen passivation ability of solar cells

A solar cell and hydrogen passivation technology, applied in circuits, photovoltaic power generation, electrical components, etc., can solve the problems of restricting the photoelectric conversion efficiency of crystalline silicon solar cells, impurity cannot be completely removed, and carrier life is reduced, etc. and control, high practical value, optimized effect of bulk passivation

Active Publication Date: 2020-05-15
上饶捷泰新能源科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] At present, the mainstream photovoltaic cells in the market are silicon-based single and polycrystalline solar cells. During the production process, some impurities in the silicon body cannot be completely removed, such as light element impurities such as oxygen, carbon, and nitrogen, and transition metals such as iron, cobalt, nickel, and copper. Impurities, in addition to a large number of various crystal defects, such as dislocations, stacking faults
The existence of impurities and defects seriously reduces the lifetime of minority carriers and restricts the photoelectric conversion efficiency of crystalline silicon solar cells

Method used

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  • A hydrogen-rich PECVD process method for enhancing the hydrogen passivation ability of solar cells

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Embodiment 1

[0027] The present invention achieves the above object by providing a hydrogen-rich PECVD process that enhances the hydrogen passivation ability of solar cells, and is characterized in that: through normal NH 3 After the pretreatment, the first and second layers of coating, the H 2 plasma deposition.

[0028] A hydrogen-rich PECVD process for enhancing the hydrogen passivation ability of solar cells, characterized in that: the NH 3 Pretreatment is to use ammonia gas to pretreat the surface of the silicon wafer after high-frequency ionization;

[0029] where NH 3 The pre-cleaning parameters were set as follows: deposition temperature 400 °C, power 4500 W, ammonia gas flow rate 7 slm, pressure 1700 mTor, duty cycle 4:40 ms, cleaning time 10 s.

[0030] The first layer of coating film described in it utilizes setting pressure and temperature, passes through silane (SiH 4 ) and ammonia (NH 3 ), after high-frequency ionization, it is deposited on the surface of the silicon waf...

Embodiment 2

[0045] All the other are specifically with embodiment 1

[0046] A hydrogen-rich PECVD process that enhances the hydrogen passivation ability of solar cells is completed through the following steps:

[0047] (1) NH 3 Pretreatment: deposition temperature 415 ℃, power 5500 W, ammonia gas flow rate 6 slm, pressure 1750 mTor, duty cycle 4:40 ms, cleaning time 15 s;

[0048] (2) The first layer of coating: deposition temperature 430 ℃, power 6800 W, ammonia flow rate 4.2 slm, silane flow rate 1100 sccm, pressure 1600 mTor, duty cycle 5:50 ms, deposition time 140 s; The ratio is controlled at 2.28, and the film thickness is controlled at 20 nm;

[0049] (3) The second layer of coating: the deposition temperature is 445 ℃, the deposition power is 7400 W, the duty cycle is 5:50 ms, the pressure is 1550 mTor, the deposition time is 470 s. The flow rate achieves a negative rate of uniform decline; among them, the initial flow rate of ammonia is 3.8 slm, the flow rate at the end of de...

Embodiment 3

[0058] All the other are specifically with embodiment 1

[0059] A hydrogen-rich PECVD process that enhances the hydrogen passivation ability of solar cells is completed through the following steps:

[0060] (1) NH 3 Pretreatment: deposition temperature 430 ℃, power 5000 W, ammonia gas flow rate 6.5 slm, pressure 1650 mTor, duty cycle 4:40 ms, cleaning time 20 s;

[0061] (2) The first layer of coating: deposition temperature 460 ℃, power 6500 W, ammonia flow rate 4.0 slm, silane flow rate 1000 sccm, pressure 1650 mTor, duty cycle 5:50 ms, deposition time 100 s; The ratio is controlled at 2.25, and the film thickness is controlled at 15 nm;

[0062] (3) The second layer coating: deposition temperature is 430 ℃, deposition power is 7800 W, duty cycle is 5:50 ms, pressure is 1600 mTor, deposition time is 450 s. During this deposition time, the flow of ammonia gas achieves a positive and uniform increase rate, and silane The flow rate achieves a negative rate of uniform declin...

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Abstract

The invention relates to a hydrogen-rich PECVD process method for improving hydrogen passivation capability of a solar cell. Silane and ammonia gas are closed after conventional PECVD plating, and plasma deposition is further performed by hydrogen. An anti-reflection film layer formed by the PECVD process provided by the invention has high concentration of hydrogen content, full hydrogen is provided for subsequent electron injection and photo injection passivation processes, so that a better passivation effect is achieved, and the photoelectric conversion efficiency of the solar cell is improved. The process is used for transformation under a traditional industrial production condition, is simple and effective and has relatively high practical value.

Description

technical field [0001] The invention belongs to the manufacturing field of solar cells, in particular to a hydrogen-rich PECVD process for enhancing the hydrogen passivation ability of solar cells in the process of depositing an anti-reflection film. Background technique [0002] As a clean, safe and convenient clean energy, photovoltaic power generation plays an important role in renewable energy technology. my country is vigorously supporting the development of the photovoltaic industry, and in-depth research and utilization of solar energy resources are of great significance to alleviating resource crises and improving the ecological environment. [0003] At present, the mainstream photovoltaic cells in the market are silicon-based single and polycrystalline solar cells. During the production process, some impurities in the silicon body cannot be completely removed, such as light element impurities such as oxygen, carbon, and nitrogen, and transition metals such as iron, ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L21/02H01L31/0216
CPCH01L21/0217H01L21/02274H01L31/02168H01L31/1804H01L31/1868Y02E10/547Y02P70/50
Inventor 刘庆平邵辉良邹臻峰邱江南陈圆付少剑
Owner 上饶捷泰新能源科技有限公司
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