Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

A kind of preparation method of high-efficiency crystalline silicon solar cell

A technology of solar cells and crystalline silicon, applied in circuits, photovoltaic power generation, electrical components, etc., can solve problems such as high cost, many precious metals, and weak efficiency improvement effect, so as to reduce the use of precious metals, increase absorption and utilization, and improve battery conversion efficiency effect

Active Publication Date: 2017-09-05
CECEP SOLAR ENERGY TECH (ZHENJIANG) CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] At present, there are two problems in the process commonly used in crystalline silicon solar cells: first, after years of development, the efficiency of the cell has reached a bottleneck, and the effect of optimizing the conventional process to improve efficiency is weak; second, the process used in the process More precious metals, resulting in high cost

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A kind of preparation method of high-efficiency crystalline silicon solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0040] Example 1: (1) Clean the silicon wafer; (2) Prepare nano-micro composite suede on the front of the silicon wafer by reactive ion etching, and then use a mixed solution of BOE, hydrogen peroxide and DI water to clean the surface of the silicon wafer; (3) Use The emitter is prepared by the diffusion process, and the square resistance of the emitter is 95 ohms; (4) The front side of the silicon wafer is protected by a water film, and the back side is directly in contact with the corrosion chemical, the edge PN junction and the surface phospho-silicate glass are removed, and the back side is polished at the same time. The reflectivity is controlled at 30; (5) Ozone oxidation is used to grow a layer of silicon dioxide on the surface of the silicon wafer with a thickness of 2nm; (6) The plasma-enhanced chemical vapor deposition method (ie PECVD) is used to prepare three Aluminum oxide + silicon nitride composite film, in which the thickness of aluminum oxide is 5 nm, and the t...

Embodiment 2

[0041]Example 2: (1) Clean the silicon wafer; (2) Prepare nano-micro composite suede on the front of the silicon wafer by metal-assisted chemical etching, and then use a mixed solution of BOE, hydrogen peroxide and DI water to clean the surface of the silicon wafer; (3) The emitter is prepared by the ion implantation process, and the square resistance of the emitter is 100 ohms; (4) The front side of the silicon wafer is protected by a water film, and the back side is directly in contact with corrosive chemicals to remove the edge PN junction and surface phospho-silicate glass, and the back side is polished at the same time. After polishing, the reflectivity is controlled at 33; (5) A layer of silicon dioxide is grown on the surface of the silicon wafer with a thickness of 10 nm by thermal oxidation; Al2O3, with a thickness of 25 nm, and after low-temperature annealing, PECVD was used to prepare silicon nitride, and superimposed on Al2O3, the thickness of silicon nitride was 15...

Embodiment 3

[0042] Example 3: (1) Clean the silicon wafer; (2) Prepare nano-micro composite suede on the front of the silicon wafer by metal-assisted chemical etching, and then use a mixed solution of BOE, hydrogen peroxide and DI water to clean the surface of the silicon wafer; (3) The emitter is prepared by the ion implantation process, and the square resistance of the emitter is 95 ohms; (4) The front side of the silicon wafer is protected by a water film, and the back side is directly in contact with corrosion chemicals to remove the edge PN junction and surface phospho-silicate glass, and the back side is polished at the same time. After polishing, the reflectivity is controlled at 30; (5) A layer of silicon dioxide is grown on the surface of the silicon wafer by thermal oxidation method, with a thickness of 2nm; (6) Al2O3 is prepared on the back of the silicon wafer by ALD method, with a thickness of 5 nm, and then after low-temperature annealing, silicon nitride was prepared by PECV...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

The invention discloses a preparation method for an efficient crystal silicon solar battery, comprising the following steps: cleaning a silicon wafer; preparing a nano-micro composite suede; preparing an emitting electrode; insulating the edge of the silicon wafer, and polishing the back surface; preparing a silicon dioxide layer on the front surface; preparing a passivating film on the back surface; preparing an antireflection layer on the front surface; laser slotting on the back surface; preparing an all-aluminium back surface field; sintering; preparing a tin-back electrode; laser slotting on the front surface; preparing an electrode on the front surface; and annealing. According to the preparation method, the nano-micro composite structured suede is prepared by adopting a reactive ion etching method or a metal auxiliary chemical corrosion method, so that the light absorption and utilization is fully increased, and the conversion efficiency of the solar battery can be effectively improved; and meanwhile, the electroplating technology is adopted to prepare the positive electrode of the solar battery, so that the usage amount of noble metals is greatly reduced, and the production cost is reduced.

Description

technical field [0001] The invention relates to the technical field of crystalline silicon solar cells in the field of photovoltaic power plants, in particular to a method for preparing high-efficiency crystalline silicon solar cells. Background technique [0002] With the development of the photovoltaic industry, in the production of cells, the improvement of photoelectric conversion efficiency and the reduction of cell manufacturing costs have become the foundation of the development of the entire photovoltaic industry. [0003] Among all kinds of solar cells, crystalline silicon cells have always occupied the most important position. In recent years, great achievements and progress have been made in improving efficiency and reducing cost of crystalline silicon solar cells, further enhancing its dominant position in the future photovoltaic industry. [0004] At present, there are two problems in the process commonly used in crystalline silicon solar cells: first, after ye...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/0224H01L31/0236H01L31/068H01L31/18
CPCH01L31/022441H01L31/02363H01L31/0682H01L31/1804Y02E10/547Y02P70/50
Inventor 黄钧林周肃范维涛黄青松黄惜惜勾宪芳
Owner CECEP SOLAR ENERGY TECH (ZHENJIANG) CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com