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Preparation method of fluorocarbon polymer-modified chemical conversion graphene/zinc oxide thin film-shaped multiband light sensing device

A zinc oxide film, fluorocarbon polymer technology, applied in graphene, scientific instruments, material analysis by optical means, etc. The effect of large noise ratio, convenient and fast preparation process, and low detection limit of light intensity

Active Publication Date: 2018-11-23
DONGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a preparation method of a fluorocarbon polymer modified chemically converted graphene / zinc oxide film-shaped multi-band photosensor, to overcome the high noise of the photosensor in the prior art, and the photosensor can only detect a single band defect

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  • Preparation method of fluorocarbon polymer-modified chemical conversion graphene/zinc oxide thin film-shaped multiband light sensing device
  • Preparation method of fluorocarbon polymer-modified chemical conversion graphene/zinc oxide thin film-shaped multiband light sensing device
  • Preparation method of fluorocarbon polymer-modified chemical conversion graphene/zinc oxide thin film-shaped multiband light sensing device

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Effect test

Embodiment 1

[0036] (1) At room temperature, weigh 300 mg of graphene oxide, place it in a 200 mL beaker, then add 100 mL of distilled water to form a dispersion with a concentration of 3 mg / mL, and then process it with an ultrasonic instrument for 10 hours to obtain 100 mL of a graphene oxide dispersion; Measure 10 mL of the graphene oxide dispersion each time and pour it into a sand core funnel with a diameter of 4.5 cm for suction filtration for 3 days to obtain a graphene oxide film.

[0037] (2) Put the graphene oxide film in the step (1) in a glass petri dish, add 20mL of 55% hydroiodic acid, seal the petri dish with the film, and place it in a dark place. After 2h, take out the film and wash it with 95% The rGO film was obtained after soaking and washing with ethanol for 3 times and drying.

[0038] (3) Using the electrophoretic assembly method, use the Zn foil as the anode in ultrapure water, and use the rGO film in step (2) as the cathode, the distance between the two electrodes i...

Embodiment 2

[0042](1) At room temperature, weigh 500 mg of graphene oxide, place it in a 200 mL beaker, add 100 mL of distilled water to make a dispersion with a concentration of 5 mg / mL, and then process it with an ultrasonic instrument for 10.5 hours to obtain 100 mL of a graphene oxide dispersion Take 10mL of graphene oxide dispersion each time and pour it into a sand core funnel with a diameter of 4.5cm for suction filtration for 3 days to obtain a graphene oxide film.

[0043] (2) Put the graphene oxide film in the step (1) in a glass petri dish, add 20mL of 55% hydroiodic acid, seal the petri dish with the film, and place it in a dark place. After 2h, take out the film and wash it with 95% The rGO film was obtained after soaking and washing with ethanol for 3 times and drying.

[0044] (3) Using the electrophoretic assembly method, use Zn foil as the anode in ultrapure water, and use the rGO film in step (2) as the cathode, the distance between the two electrodes is 1.5cm, the appli...

Embodiment 3

[0046] (1) At room temperature, weigh 600 mg of graphene oxide, place it in a 200 mL beaker, add 100 mL of distilled water to make a dispersion with a concentration of 6 mg / mL, and then process it with an ultrasonic instrument for 11 hours to obtain 30 mL of graphene oxide slurry; The slurry was scraped to obtain a graphene oxide film.

[0047] (2) Place the graphene oxide film in step (1) in a graphitization furnace at a temperature of 400 °C. After 2 hours, take out the film and cool it to room temperature to obtain an rGO film.

[0048] (3) Using the electrophoretic assembly method, Zn foil is used as the anode in ultrapure water, and the rGO film is used as the cathode. The distance between the two electrodes is 1cm, the applied voltage is 20V / cm, the current is 1A, and the current is 0.5 hours. Take it out and dry it at room temperature. A ZnO / rGO thin film was obtained. Apply 0.1mL PFPE to 1cm 2 The ZnO / rGO film was obtained, and the fluorocarbon polymer modified chemi...

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Abstract

The invention relates to a preparation method of a fluorocarbon polymer-modified chemical conversion graphene / zinc oxide thin film-shaped multiband light sensing device. The preparation method comprises the following steps of preparing a chemical conversion graphene / zinc oxide thin film (ZnO / rGO) by a reagent-free electrophoresis assembly method; coating a fluorocarbon polymer to the surface of the chemical conversion graphene / zinc oxide thin film. The preparation method has the advantages that the operation is simple, the preparation process is convenient and rapid, the cost is low, and the application prospect is broad; the obtained light sensing device is flexible, and is suitable for sensing the light in the field of wearable equipment; the obtained light sensing device has good sensing property at the ultraviolet light band, visible light band and infrared wave band, the signal-to-noise ratio of light current is large, and the detection lower limit of light intensity is low.

Description

technical field [0001] The invention belongs to the field of preparation of flexible photosensors, in particular to a preparation method of a fluorocarbon polymer modified chemically converted graphene / zinc oxide film-like multi-band photosensor. Background technique [0002] Flexible sensors can be divided into physical flexible sensors (such as photoelectric detection, electronic skin, pressure sensing, and temperature sensing, etc.) and chemical flexible sensors (such as gas sensing, ion sensing, and biological small molecule sensing, etc.). [0003] Photoelectric sensor is a sensor with light as the measurement medium and photoelectric device as the conversion element. It has excellent characteristics such as non-contact, fast response, and reliable performance. In recent years, with the continuous emergence of various new photoelectric devices, especially the rapid development of laser technology and image technology, photoelectric sensors have become the key components...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N21/01C01B32/184C25D13/02C25D13/12
CPCC25D13/02C25D13/12C01B32/184G01N21/01
Inventor 侯成义罗程王宏志张青红李耀刚
Owner DONGHUA UNIV
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