Hole selective MoO<x>/SiO<x>(Mo)/n-Si heterojunction, solar cell device and fabrication method of solar cell device

Abstract

The invention discloses a hole selective MoO<x>/SiO<x>(Mo)/n-Si heterojunction, a solar cell device and a fabrication method of the solar cell device. The fabrication method comprises the steps of depositing a MoO<x> thin film by taking a single-crystal silicon wafer as a substrate, and enabling MoO3 molecular groups in vapor steam, Mo, O atoms and silicon atoms in a shallow layer of the single-crystal silicon wafer to generate solid-phase reaction to form an ultrathin SiO<x>(Mo) layer by hot evaporation; and forming a functional layer structure body of an interface composite solar cell device, and fabricating an IOT thin film and an electrode to obtain a solar cell piece. The MoO<x>/SiO<x>(Mo)/n-Si heterojunction solar cell is fabricated by combining a crystal silicon surface cleaning process, a MnO<x> thin film deposition process by hot evaporation, a low-energy vapor steam solid-phase reaction method, a ITO thin film deposition process by radio-frequency magnetron sputtering, a nitric acid oxidization process, a normal-pressure chemical vapor deposition thin film process and a hot evaporation metal electrode process, and has relatively good stability and relatively high photoelectric conversion efficiency.

Description

technical field [0001] The invention relates to a solar cell device and a preparation method thereof, in particular to a solar cell device with MoO x / n-Si structure heterojunction photovoltaic device and its preparation method, which are applied to the preparation technology of high-efficiency crystalline silicon solar cells, semiconductor optoelectronic device technology and silicon oxide thin film composite material science and technology fields. Background technique [0002] In recent years, TMO (transition metal oxides) thin film materials have been gradually developed as hole-selective contact layers in silicon-based heterojunctions, and the present invention focuses on MoO x This high work function thin film material. In 2014, C. Battaglia et al. used vacuum evaporation technology to deposit 15nm thick MoO on n-Si substrates x thin film, prepared for the first time with MoO x A silicon-based heterojunction photovoltaic device with a hole-selective contact layer obt...

AI Technical Summary

Problems solved by technology

In 2014, C. Battaglia et al. used vacuum evaporation technology to deposit 15nm thick MoO on n-Si substrates x thin film, prepared for the first time with MoO x A silicon-based heterojunction photovoltaic device with a hole-selective contact layer obtained a photoelectric conversion efficiency (η) of 14.3%, due to MoO x / n-Si interface without additional passivation treatment, the open circuit voltage (V oc ) is only 580mV; subsequently, C.Battaglia et al. in MoO x Intrinsic hydrogenated amorphous silicon (a-Si:H(i)) is introduced into the / n-Si interface region, which greatly reduces the MoO x / n-Si interface recombination, so that V oc and η reach 711mV and 18.8%, respectively, but the fill factor (FF) is only 67.2% (at this time, the electrode annealing temperature is 200°C, N 2 atmosphere)

Considering that a-Si:H(i) has problems such as parasitic absorption and narrow process window, and the deposition of a-Si:H(i) layer requires expensive equipment

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