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A bipolar power semiconductor device and its preparation method

A technology of power devices and semiconductors, which is applied in the field of bipolar semiconductor power devices and their preparation, and can solve the problems of increasing the cost of using devices and increasing the overall power consumption

Active Publication Date: 2020-11-13
UNIV OF ELECTRONICS SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to turn off the thyristor normally in actual use, it is generally necessary to design a complex peripheral control circuit, which increases the cost of the device and also increases the overall power consumption.

Method used

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  • A bipolar power semiconductor device and its preparation method
  • A bipolar power semiconductor device and its preparation method
  • A bipolar power semiconductor device and its preparation method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0088] This embodiment provides a MOS control anode IGBT device, the cell structure of which is as follows figure 2 As shown, a bipolar semiconductor power device with a MOS control anode includes an anode structure, a drift region structure, a cathode structure and a control gate structure; the anode structure includes a P-type anode region 109 and a The anode metal 110; the drift region structure includes an N+ field stop layer 108 and an N-type drift region 107 located on the upper surface of the N+ field stop layer 108, and the N-type drift region 107 is located on the upper surface of the P-type anode region 109; The cathode structure includes a P-type body region 106, a P+ emitter region 105, an N+ emitter region 104 and a cathode metal 101, the P+ emitter region 105 and the N+ emitter region 104 are located on the top layer of the P-type body region 106, and the upper surfaces of the two are connected to the cathode metal 101, the cathode structure is located on the to...

Embodiment 2

[0091] This embodiment provides a MOS control anode IGBT device, the cell structure of which is as follows image 3 As shown, the difference from Embodiment 1 is that the thickness of the second anode trench gate dielectric layer 114 in the anode trench gate structure is greater than the thickness of the first anode trench gate dielectric layer 113, specifically, the second anode trench gate The thickness of dielectric layer 114 is about The thickness of the first anode trench gate dielectric layer 113 is about The purpose of this design is to reduce the parasitic capacitance of the anode trench gate electrode while controlling the turn-on voltage of the anode trench gate, thereby reducing the adverse effect of the parasitic parameters of the anode MOS structure on the IGBT device parameters.

Embodiment 3

[0093] This embodiment provides a MOS control anode IGBT device, the cell structure of which is as follows Figure 4 As shown, the difference from Embodiment 1 is that the N+ source region 112 in the anode MOS structure is removed and replaced with a P-type base region 111 . Since the concentration of the P-type base region 111 is lower than that of the P-type anode region 109, when the device is working, the anode trench gate controls the channel inversion on the side, thereby achieving the effect of bypassing the anode diode. At this time, the P-type anode region 109 forms an ohmic contact with the anode metal 110 , and the P-type base region 111 forms a Schottky contact with the anode metal 110 .

[0094] When the device is working, the Schottky junction formed by the anode metal 110 and the P-base region 111 is reversely biased. When the control gate structure forms a conductive channel, the carriers passing through the channel of the control gate structure are reversely ...

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Abstract

A bipolar power semiconductor device and a preparation method thereof belong to the technical field of semiconductor power devices. On the premise of keeping the cathode structure of the traditional bipolar power semiconductor device unchanged, the present invention introduces an anode trench gate structure, source region and / or base region into the anode region of the device, without affecting the normal operation and opening of the device. In this case, by controlling the anode trench gate structure, the forward conduction voltage drop of the anode diode is bypassed, thereby achieving the effect of reducing the forward conduction voltage drop of the power semiconductor device. After the anode diode is bypassed, the minority carrier injection from the anode region to the drift region is reduced, the reverse recovery process time of the device is shortened when the device is turned off, the turn-off speed of the device is improved, and the switching loss is reduced. The invention improves the carrier concentration distribution of the entire N-type drift region and the compromise between the forward conduction voltage drop and switching loss; and the manufacturing method of the device does not need to add additional process steps, and is compatible with the traditional device manufacturing method.

Description

technical field [0001] The invention belongs to the technical field of power semiconductor devices and preparation, and in particular relates to a bipolar semiconductor power device with a MOS control anode and a preparation method thereof. Background technique [0002] As a major category of electronic technology, power electronics technology (another category is information electronics technology) is a technology that can realize the transmission, processing, storage and control of electric energy, and is suitable for high-power power conversion and processing. This technology can change the voltage, current, frequency, and phase to meet the power requirements of the system, so as to ensure the proper application of electric energy. In addition, electric energy can be used after being processed by power electronic technology, which can be more economical, efficient and environmentally friendly. Power electronics technology was born in the 1950s. As a new technology, it su...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/06H01L21/336H01L29/739
CPCH01L29/0684H01L29/66325H01L29/7393
Inventor 张金平殷鹏飞罗君轶刘竞秀李泽宏张波
Owner UNIV OF ELECTRONICS SCI & TECH OF CHINA
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