A cleaning process before preparing black silicon by solar polycrystalline RIE

A technology of solar energy and black silicon, applied in the direction of sustainable manufacturing/processing, final product manufacturing, semiconductor/solid-state device manufacturing, etc., can solve the problems of low production capacity, low market share, poor appearance uniformity of cells, etc., and achieve improved conversion efficiency, reduced recombination in vivo, and reduced surface contamination

Inactive Publication Date: 2019-01-04
HENGDIAN GRP DMEGC MAGNETICS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current dry method black silicon step uses traditional acid texturing to remove damage, and low-capacity RIE equipment and high-cost equipment, resulting in its cost performance being inferior to wet method black silicon, and its market share i

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  • A cleaning process before preparing black silicon by solar polycrystalline RIE
  • A cleaning process before preparing black silicon by solar polycrystalline RIE

Examples

Experimental program
Comparison scheme
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Example Embodiment

[0024] Example 1

[0025] A cleaning process before solar polycrystalline RIE prepares black silicon, including the following steps:

[0026] a) Pre-cleaning: The silicon wafer is cleaned with a cleaning solution to remove organic impurities and particulate impurities. The cleaning temperature is 50°C and the cleaning time is 2 minutes. After completion, rinse with water; the cleaning solution is composed of sodium hydroxide solution, hydrogen peroxide and water It is composed of 1:1:4 by volume; the sodium hydroxide solution is a sodium hydroxide solution with a mass concentration of 35%;

[0027] b) Cleaning: The silicon wafers treated in step a) are immersed in a high-concentration alkaline solution for 3 minutes to remove the damaged layer, at a temperature of 50°C, and rinsed with water after completion; the high-concentration alkaline solution is 15% by mass Sodium hydroxide solution; the thickness of the removed damage layer is controlled to be 18-22 microns;

[0028] c) Oxida...

Example Embodiment

[0030] Example 2

[0031] A cleaning process before solar polycrystalline RIE prepares black silicon, including the following steps:

[0032] a) Pre-cleaning: The silicon wafer is cleaned with a cleaning solution to remove organic impurities and particulate impurities. The cleaning temperature is 60°C and the cleaning time is 5 minutes. After completion, rinse with water; the cleaning solution is composed of sodium hydroxide solution, hydrogen peroxide and water It is composed by volume ratio of 1:2.5:7; the sodium hydroxide solution is a sodium hydroxide solution with a mass concentration of 45%;

[0033] b) Cleaning: The silicon wafers treated in step a) are immersed in a high-concentration alkaline solution for 5 minutes to remove the damaged layer, at a temperature of 60°C, and rinsed with water after completion; the high-concentration alkaline solution is 25% by mass Sodium hydroxide solution; the thickness of the removed damage layer is controlled to be 18-22 microns;

[0034] ...

Example Embodiment

[0036] Example 3

[0037] A cleaning process before solar polycrystalline RIE prepares black silicon, including the following steps:

[0038] a) Pre-cleaning: The silicon wafer is cleaned with a cleaning solution to remove organic impurities and particulate impurities. The cleaning temperature is 50°C and the cleaning time is 2 minutes. After completion, rinse with water; the cleaning solution is composed of sodium hydroxide solution, hydrogen peroxide and water It is composed of 1:1:6 by volume; the sodium hydroxide solution is a sodium hydroxide solution with a mass concentration of 40%;

[0039] b) Cleaning: The silicon wafers treated in step a) are immersed in a high-concentration alkaline solution for 3 minutes to remove the damaged layer, at a temperature of 60°C, and rinsed with water after completion; the high-concentration alkaline solution is 20% by mass Sodium hydroxide solution; the thickness of the removed damage layer is controlled to 22 microns;

[0040] c) Oxidation l...

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Abstract

The invention belongs to the technical field of solar polycrystalline battery pieces. The invention discloses a cleaning process before preparing black silicon by solar polycrystalline RIE, which comprises the steps of pre-cleaning, cleaning, removing oxide layer and drying, wherein the pre-cleaning stage adopts a mixed solution of sodium hydroxide and hydrogen peroxide for cleaning, and the cleaning stage adopts a high-concentration alkaline solution for impregnating, wherein the pre-cleaning stage adopts a high-concentration alkaline solution for impregnating. The method of the invention canuse simple groove-type equipment to pre-clean the RIE black silicon of mortar/diamond wire silicon wafer, not only removing the damage layer generated in the silicon wafer cutting process, but also removing the impurities on the silicon wafer surface, such as grease, metal particles and other organic matter; For the original silicon wafer surface impurities treatment can reduce surface contamination reduce internal recombination in the subsequent diffusion, and hydrogen passivation can get a good passivation effect, thus improving the conversion efficiency of black silicon battery.

Description

technical field [0001] The invention relates to the technical field of solar polycrystalline cells, in particular to a cleaning process before black silicon is prepared by solar polycrystalline RIE. Background technique [0002] Due to the existence of grain boundaries and anisotropy in polysilicon wafers, polysilicon solar cells should be made by isotropic etching. Currently, hydrofluoric acid, nitric acid and water are used for texturing, which is a low-cost industrial production process. , but the suede has high reflectivity and low efficiency. The use of RIE to prepare black silicon polycrystalline solar cells is a process that can effectively reduce the reflectivity of the suede surface and improve efficiency. However, due to the cutting method, the surface damage layer of the original silicon wafer is seriously damaged and there are a lot of impurities on the surface. If the silicon wafer is directly prepared by RIE to prepare black silicon, the surface uniformity wil...

Claims

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Application Information

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IPC IPC(8): H01L21/02H01L21/311H01L31/18
CPCH01L21/02052H01L21/31111H01L31/1804Y02E10/547Y02P70/50
Inventor 厉文斌赵颖郑正明
Owner HENGDIAN GRP DMEGC MAGNETICS CO LTD
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