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Preparation method for target

A target and target blank technology, which is applied in metal material coating process, ion implantation plating, coating, etc., can solve the problem that the density cannot meet higher-end display technology, the surface flatness of ITO target is not enough, ITO Target nodulation and other problems, to achieve the effect of reducing macro and micro voids, high density, less micro voids and defects

Active Publication Date: 2019-01-15
SHANGHAI UNIV
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Problems solved by technology

For example, the CN106631049A patent application proposes a method for sintering ITO rotating targets at atmospheric pressure, which is sintered in an oxygen atmosphere at atmospheric pressure, and the ratios of indium oxide and tin oxide with a relative density of 98.5 to 99.4% are 93:7, 95:5, and 97: 3 ITO rotating target, but the surface flatness of the ITO target prepared by this sintering method is not enough, and its density can not meet the requirements of higher-end display technology, and the surface of the ITO target obtained by sintering after a period of use It is easy to produce a large number of nodules, and ZTO targets and WZTO targets also have the problem of nodules on the target surface during magnetron sputtering

Method used

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preparation example Construction

[0026] The invention provides a method for preparing a target, comprising the following steps:

[0027] (1) After the target material is melted, blast forming, classification treatment and annealing treatment are carried out sequentially to obtain powder oxide;

[0028] (2) carrying out nano-ball milling after mixing the powdered oxide obtained in the step (1) with water to obtain a ball mill;

[0029] (3) spraying and granulating the ball mill material obtained in the step (2) to obtain a blank;

[0030] (4) subjecting the blank obtained in the step (3) to hydroforming, vacuum packaging and cold isostatic pressing in sequence to obtain a target blank;

[0031] (5) Sintering the target body obtained in step (4) to obtain a target;

[0032] The sintering is carried out under a mixed atmosphere of oxygen and air;

[0033] The sintering pressure is 1.4-1.6 atm.

[0034] In the present invention, the target raw material is melted and subjected to explosive forming, classificat...

Embodiment 1

[0049] Preparation of ITO target:

[0050] According to the ratio of indium to tin ratio of 1:8, the target raw material was melted, followed by blast forming, classification treatment and annealing treatment at 900°C for 6.5 hours to obtain powder oxide; after mixing with water, nano ball milling was carried out to obtain a particle size of 360nm The ball abrasive is sprayed and granulated to obtain a blank; the blank is subjected to hydroforming and vacuum packaging in sequence, and then subjected to 285MPa cold isostatic pressing to obtain a target blank; the target blank is heated at 650°C Degreasing for 5 days; put the degreased target body into the sintering furnace, feed oxygen to adjust the pressure in the sintering furnace to 1 atm, and fix the flow rate of oxygen into the furnace, and then feed air to pressurize the pressure in the sintering furnace to adjust to 1.5atm, the fixed air flow rate remains unchanged; start sintering, and maintain the flow rate of oxygen a...

Embodiment 2

[0059] Preparation of ZTO target

[0060] According to the ratio of zinc to tin ratio of 1:1, the target raw material is melted, followed by blasting forming, classification treatment and annealing treatment at 900°C for 6.5h to obtain powder oxide; after mixing with water, conduct nano ball milling to obtain a particle size of 360nm The ball abrasive is sprayed and granulated to obtain a blank; the blank is subjected to hydroforming and vacuum packaging in sequence, and then subjected to 285MPa cold isostatic pressing to obtain a target blank; the target blank is heated at 650°C Degreasing for 5 days; put the degreased target body into the sintering furnace, feed oxygen to adjust the pressure in the sintering furnace to 1 atm, and fix the flow rate of oxygen into the furnace, and then feed air to pressurize the pressure in the sintering furnace to adjust to 1.5atm, fixed air flow rate remains unchanged; start sintering, maintain the flow rate of oxygen and air during sinterin...

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Abstract

The invention provides a preparation method for a target. The preparation method comprises the following successive steps: preparation of a powdery oxide; preparation of a ball-milled material; preparation of a blank material; preparation of a green body of the target; and preparation of a finished target product. According to the invention raw materials for the target are subjected to cold isostatic pressing to obtain the green body of the target; then the green body of the target is placed in a mixed atmosphere of oxygen and air for stage-by-stage heating and sintering; and the nitrogen andoxygen in the mixed atmosphere during sintering complement the oxidation-reduction process of the oxide in the sintering process of the target, so the macroscopic and microscopic gaps of the target are reduced, the cracks and defects of the target are decreased, and the phenomenon of nodulation of the target during magnetron sputtering in a later phase is reduced. The ITO target prepared in the invention has a relative density of 99.7% and a resistivity of 1.38 [mu]omega.cm. When the target is used for magnetron sputtering, a bonding rate reaches 99%, and a nodulation rate of the surface of the target is no more than 10% after continuous sputtering for 100 h.

Description

technical field [0001] The invention belongs to the technical field of preparation of novel display materials, and in particular relates to a method for preparing a target. Background technique [0002] With the continuous development of flat panel display technology, the demand for various targets used in the preparation of transparent conductive, insulating layer and semiconductor layer films is increasing, such as high-quality ITO targets and ZTO targets for plating conductive films , WZTO target. At present, the industrial preparation of various thin films mainly adopts the method of magnetron sputtering. The thin films prepared by the magnetron sputtering method have the advantages of good surface uniformity and high film density, while the thin films prepared by the magnetron sputtering method have the advantages of The quality is good or bad has a great relationship with the quality of the target. [0003] ITO (indium tin oxide) target is a cathode material for magn...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C23C14/35C23C14/08
CPCC23C14/086C23C14/3414C23C14/35
Inventor 李喜峰杨祥姜姝潘成超蒋文亚李阿杰谈艳阳
Owner SHANGHAI UNIV
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