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Method of transmitted Algan ultraviolet optical cathode preparation method based on the substrate

A transmission type, ultraviolet light technology, applied in the direction of light-emitting cathode manufacturing, photoemission cathode, discharge tube main electrode, etc., can solve the problems of low deep ultraviolet light transmittance, high density of AlGaN emission layer, etc., and achieve simple epitaxy process, reduce Difficulty in growth, to ensure the effect of efficient detection

Active Publication Date: 2021-03-23
NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD
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  • Application Information

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Problems solved by technology

[0005] The present invention proposes a method for preparing a transmissive AlGaN ultraviolet photocathode based on substrate lift-off. AlGaN ultraviolet photocathode preparation method, in order to overcome the problems existing in the prior art such as the high defect density of the AlGaN emission layer and the low deep ultraviolet light transmittance, avoid the absorption of ultraviolet light by the substrate and GaN material, and obtain better results. High quantum conversion efficiency, preparation of high-performance AlGaN photocathode

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  • Method of transmitted Algan ultraviolet optical cathode preparation method based on the substrate
  • Method of transmitted Algan ultraviolet optical cathode preparation method based on the substrate
  • Method of transmitted Algan ultraviolet optical cathode preparation method based on the substrate

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[0022] A method for preparing a transmissive AlGaN ultraviolet photocathode based on substrate lift-off, comprising the following steps:

[0023] 1) Prepare materials: take a substrate for growing nitride;

[0024] 2) Growth of GaN peeling layer: transfer the substrate into the MOCVD system, and sequentially bake the substrate at high temperature, grow the nucleation layer, and grow the high-quality GaN peeling layer;

[0025] 3) Growth of p-AlGaN emission layer: On the high-quality GaN buffer layer, grow a p-type Mg-doped high-aluminum component AlGaN photo-emission layer;

[0026] 4) Front-side bonding of the quartz window: transfer the epitaxial material in step 3 out of the MOCVD system, clean the surface, and bond the quartz window material on the AlGaN surface;

[0027] 5) Substrate peeling: transfer the material in step 4 into the laser lift-off equipment, use laser decomposition technology to completely decompose the GaN layer, and peel off the substrate;

[0028] 6)...

Embodiment 1

[0043] Take a double-sided polished sapphire substrate 10, transfer the substrate into the MOCVD system, bake the substrate in a hydrogen atmosphere at a high temperature of 1100°C for 5 minutes, cool down to 600°C to grow a 20nm GaN nucleation layer; further raise the temperature to 1050°C for high The high-quality GaN buffer layer 20 is grown, and the growth thickness is 2 μm;

[0044] Secondly, on the high-quality GaN buffer layer, increase the growth temperature to 1080° C., and grow a p-type Mg-doped high-aluminum composition AlGaN photoemissive layer 30 with a thickness of 100 nm, an Al composition of 0.4, and a Mg doping concentration of 1×10 19 cm -3 ;

[0045] Then, cool down to room temperature, transfer the epitaxial material out of the MOCVD system, use acetone, ethanol, and deionized water to ultrasonically clean the surface dirt, and bond a quartz window material 40 on the AlGaN emitter layer, the thickness of the quartz window material is 2mm;

[0046] Then, t...

Embodiment 2

[0049] First, take a silicon substrate 10, transfer the substrate into an MOCVD system, bake the substrate in a hydrogen atmosphere at a high temperature of 1100°C for 5 minutes, cool down to 600°C to grow a 20nm AlN nucleation layer; further raise the temperature to 1050°C for high-quality GaN buffer layer 20 is grown with a growth thickness of 5 μm;

[0050] Secondly, on the high-quality GaN buffer layer, increase the growth temperature to 1080° C., and grow a p-type Mg-doped high-aluminum composition AlGaN photoemissive layer 30 with a thickness of 70 nm, an Al composition of 0.5, and a Mg doping concentration of 5×10 19 cm -3 ;

[0051] Then, cool down to room temperature, transfer the epitaxial material out of the MOCVD system, use acetone, ethanol, and deionized water to ultrasonically clean the surface dirt, and bond a quartz window material 40 on the AlGaN emitter layer, the thickness of the quartz window material is 4mm;

[0052] Then, the material is transferred in...

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Abstract

The invention relates to a method for preparing a transmissive AlGaN ultraviolet photocathode based on substrate peeling, comprising the following steps: 1) preparing a material; 2) sequentially carryout high-temperature baking, nucleate layer growth and high-quality GaN release layer growth; 3) growing a p-type Mg doped AlGaN photoemissive layer with high aluminum content; 4) bon that quartz window material on the surface of the AlGaN; 5) that GaN lay is thoroughly decomposed by use a laser decomposition technology, and the substrate is stripped; 6) activating surface of the AlGaN by Cs or Cs / O layer. 1) GaNis taken as that buffer lay of the ultraviolet photoelectric cathode instead of AlN, so that the growth difficulty of the buffer layer is reduce, the crystal quality of the p-type AlGaN emitting layer is improved, and the photocathode with higher sensitivity is prepared; 2) that lase decomposition technology of the buffer lay is adopted to fully decompose the GaN layer and realizethe substrate peeling off, thereby avoiding the absorption of the ultraviolet incident light by the substrate and the buff layer and ensuring the efficient detection of the ultraviolet light by the photoemission layer; 3) the substrate peeled off by the laser can be used repeatedly and economically.

Description

technical field [0001] The invention relates to a method for preparing a transmissive AlGaN ultraviolet photocathode based on substrate stripping, and belongs to the technical field of ultraviolet detection materials. Background technique [0002] Ultraviolet detection technology is another dual-use photoelectric detection technology developed after infrared and laser detection technology. Due to the strong absorption and scattering of gas molecules such as ozone in the atmosphere, the light waves with a wavelength of 220-280nm in solar radiation (ultraviolet light source) are almost completely absorbed, so the ultraviolet radiation in this spectrum is almost attenuated to zero near sea level. Known as the "sun blind zone". Ultraviolet detection mainly uses the ultraviolet band in the solar blind zone, because the ultraviolet signals below 280nm detected at low altitude and on the ground can be considered to come from artificial emission sources, such as burning hydrocarbon...

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01J9/12H01J1/34
CPCH01J1/34H01J9/12
Inventor 罗伟科李忠辉陈鑫龙
Owner NO 55 INST CHINA ELECTRONIC SCI & TECHNOLOGYGROUP CO LTD