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Indium phosphide wafer with olive-shaped pits on back surface, preparation method of indium phosphide and corrosive liquid used in preparation method

An indium phosphide and olive-shaped technology, which is applied to surface etching compositions, chemical instruments and methods, and machine tools suitable for grinding workpiece planes, can solve problems such as research on the surface morphology of indium phosphide wafers, and achieve The shape is easy to control, the quality is improved, and the repeatability is good.

Active Publication Date: 2019-02-01
BEIJING TONGMEI XTAL TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] So far, with regard to {100} indium phosphide wafers, most of the information in the prior art focuses on the surface of the wafer used to grow the epitaxial layer, and there is no related report on the surface morphology of the indium phosphide wafer

Method used

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  • Indium phosphide wafer with olive-shaped pits on back surface, preparation method of indium phosphide and corrosive liquid used in preparation method
  • Indium phosphide wafer with olive-shaped pits on back surface, preparation method of indium phosphide and corrosive liquid used in preparation method
  • Indium phosphide wafer with olive-shaped pits on back surface, preparation method of indium phosphide and corrosive liquid used in preparation method

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Embodiment 1

[0117] Prepare the corrosion solution, in terms of molar ratio, the H in the corrosion solution 2 SO 4 、H 2 o 2 The ratio to deionized water is 1:0.57:5.58. The preparation steps of the corrosion solution are firstly mixing deionized water and hydrogen peroxide, and then adding sulfuric acid while stirring.

[0118] Using the above etching solution, prepare a {100} indium phosphide (InP) wafer according to the following steps:

[0119] (1) Cut {100} indium phosphide wafers with a multi-wire cutting machine from an indium phosphide crystal rod with a diameter of 10 cm; wherein the indium phosphide crystal rod is an indium phosphide single crystal crystal rod with a transverse cross section A circular indium phosphide crystal rod (abbreviated as a circular indium phosphide crystal rod) has a rectangular cross-section in the longitudinal direction, and a circular cross-section with a diameter of 10 cm.

[0120] (1') use chamfering machine to carry out edge chamfering process...

Embodiment 2

[0130] Preparation of corrosion solution, which includes acetic acid, deionized water and potassium permanganate solution, in molar ratio, CH in this corrosion solution 3 COOH, KMnO 4 The ratio to deionized water is 1:0.35:4.53.

[0131]Using the above etching solution, prepare a {100} indium phosphide (InP) wafer according to the following steps:

[0132] (1) Cut {100} indium phosphide (InP) wafers from an indium phosphide crystal rod with a multi-wire cutting machine; wherein the indium phosphide crystal rod is an indium phosphide single crystal crystal rod with a circular cross section The indium phosphide crystal rod (referred to as a circular indium phosphide crystal rod) has a square cross-section in the length direction, and a circular cross-section with a diameter of 10 cm.

[0133] (1') Carry out surface grinding on both sides of {100} indium phosphide (InP) wafer, the abrasive material used for surface grinding is grinding powder, and its median particle size is 9-...

Embodiment 3

[0142] Preparation of corrosion solution, which includes phosphoric acid, deionized water and potassium dichromate solution, in molar ratio, H in the corrosion solution 3 PO 4 、K 2 Cr 2 o 7 The ratio to deionized water is 1:0.04:1.8.

[0143] Using the above etching solution, prepare a {100} indium phosphide (InP) wafer according to the following steps:

[0144] (1) Cut {100} indium phosphide (InP) wafers from an indium phosphide crystal rod with a multi-wire cutting machine; wherein the indium phosphide crystal rod is an indium phosphide single crystal crystal rod with a circular cross section The indium phosphide crystal rod (referred to as a circular indium phosphide crystal rod) has a square cross-section in the length direction, and a circular cross-section with a diameter of 10 cm.

[0145] (1') use chamfering machine to carry out edge chamfering process to the wafer cut out in step (1) (such as Figure 4 ), so that the edge of the wafer is rounded ( Figure 4 a);...

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Abstract

The invention relates to an [100] indium phosphide (InP) wafer. According to the [100] indium phosphide (InP) wafer, the olive-shaped pits are formed in the back surface of the wafer, the olive shaperefers to a shape with a wide middle part and two narrow ends, for example, an oval shape. The invention also relates to a method for preparing the [100] indium phosphide (InP) wafer and a corrosive liquid used in the method. The surface morphology of the [100] indium phosphide (InP) wafer is regular, the wafer is uniformly heated in the epitaxial growth, and the application effect is good.

Description

technical field [0001] The invention relates to a {100} indium phosphide (InP) wafer with olive-shaped pits on the back, an etching solution and a preparation method for preparing the same. Background technique [0002] Indium phosphide (InP) single crystal belongs to III-V semiconductor materials, its bandgap width is 1.35eV, it has high electron mobility, good radiation resistance, high thermal conductivity, high breakdown electric field and other superior characteristics, making it a The main substrates in the fields of optical fiber communication, microwave, millimeter wave devices, radiation-resistant solar cells, etc., are widely used. At present, most of the indium phosphide (InP) single crystal substrates provided as commercial products are {100} indium phosphide wafers. [0003] The performance and service life of indium phosphide devices mainly depend on the structure of the device itself and the growth quality of each epitaxial functional layer. To form an epita...

Claims

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Application Information

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IPC IPC(8): B24B7/22B24B37/10C30B33/10C30B29/40
CPCB24B7/228B24B37/10C30B29/40C30B33/10H01L31/02363H01L31/02366H01L31/0304H01L31/184H01L21/02019C09K13/00C09K13/04H01L29/045H01L29/20H01L29/34
Inventor 王留刚李海淼朱颂义
Owner BEIJING TONGMEI XTAL TECH CO LTD