Film bulk acoustic wave resonator and preparation method thereof

A thin-film bulk acoustic wave and resonator technology, applied in the field of resonators, can solve problems such as the adverse effects of resonant structures, and achieve the effects of low power consumption, low cost, and low temperature coefficient

Active Publication Date: 2019-02-01
HEYUAN AIFO LIGHT COMM TECH CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The second object of the present invention is to provide a method for preparing a thin-film bulk acoustic resonator, which does not require the use of a sacrificial layer and releases the sacrificial layer from the release window, thereby overcoming the adverse effects on the resonant structure during the removal of the sacrificial layer. influence issues, so that the resulting resonator has better performance

Method used

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  • Film bulk acoustic wave resonator and preparation method thereof
  • Film bulk acoustic wave resonator and preparation method thereof
  • Film bulk acoustic wave resonator and preparation method thereof

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preparation example Construction

[0046] The preparation method of the above-mentioned film bulk acoustic resonator comprises,

[0047] Thin-film structural layer growth step: epitaxially growing piezoelectric thin films on the surface of the growth substrate;

[0048] Top electrode manufacturing step: prepare the top electrode on the upper surface of the piezoelectric film by sputtering or electron beam evaporation;

[0049] thinning step: thinning the growth substrate;

[0050] Etching step: pattern the growth substrate by coating, developing and exposing, and deeply etch the piezoelectric film;

[0051] Manufacturing steps of down-lead holes: pattern the growth substrate and deeply etch the top electrode to form a down-lead hole, and use electroplating to lead the top electrode to the lower surface of the growth substrate through the down-lead hole;

[0052] Bottom electrode manufacturing step: pattern the shape of the bottom electrode on the lower surface of the growth substrate, and make the bottom elec...

Embodiment 1

[0055] refer to Figure 2-6 , a thin-film bulk acoustic resonator prepared by the following preparation method:

[0056] Thin film structural layer growth step: depositing (0002) oriented single crystal aluminum nitride layer on the surface of the growth substrate 1 made of silicon which has been cleaned and dried by standard RCA, as the piezoelectric film 2;

[0057] Wherein, the piezoelectric thin film of monocrystalline aluminum nitride layer can be 50sccm (standard state milliliter / min) in trimethylaluminum (TMA) flow rate, NH 3 The flow rate is 3slm (standard state liter / min), the Ar flow rate is 1slm, the substrate temperature is 950°C, the total pressure of the reaction chamber is 40Tor, and it is deposited by MOCVD (metal organic compound chemical vapor deposition) under the parameters;

[0058] Steps for making the top electrode: using a radio frequency magnetron sputtering system, using a pure molybdenum target (purity 99.999%) to sputter deposit a layer of metal mo...

Embodiment 2

[0065] A thin film bulk acoustic resonator prepared by the following preparation method:

[0066] Thin film structure layer growth step: deposit (0002) oriented single crystal aluminum nitride layer on the surface of the growth substrate made of silicon after standard RCA cleaning and drying, as a piezoelectric film;

[0067] Wherein, the piezoelectric thin film of monocrystalline aluminum nitride layer can be 55sccm (standard state milliliter / min) in trimethylaluminum (TMA) flow rate, NH 3 The flow rate is 4slm (liter / min in standard state), the Ar flow rate is 2slm, the substrate temperature is 960°C, the total pressure of the reaction chamber is 45Tor, and it is deposited by MOCVD (metal organic compound chemical vapor deposition) under the parameters;

[0068] Top electrode manufacturing steps: using a radio frequency magnetron sputtering system, use a pure molybdenum target (purity 99.999%) to sputter deposit a layer of metal molybdenum on the surface of the single crysta...

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Abstract

The invention discloses a film bulk acoustic wave resonator, comprising a growth substrate, a piezoelectric film, a top electrode and a bottom electrode, wherein the piezoelectric film is epitaxiallygrown on the growth substrate, the top electrode is prepared on an upper surface of the piezoelectric film, a lower guide hole is deeply etched on the growth substrate, and the lower guide hole penetrates through the growth substrate and the piezoelectric film; and a back surface of the growth substrate is etched to form a hollow cavity, and the bottom electrode is prepared on a lower surface of the growth substrate. The invention further provides a preparation method of the film bulk acoustic wave resonator. The film bulk acoustic wave resonator disclosed by the invention is simple in structure, is unlikely to collapse, can well improve the quality of the piezoelectric film, and will become a solution suitable for radio frequency filters in high frequency and high power occasions in the future.

Description

technical field [0001] The invention relates to the technical field of resonators, in particular to a method for preparing a thin-film bulk acoustic wave resonator. Background technique [0002] The multi-functional development of wireless communication terminals has put forward high technical requirements for radio frequency devices such as miniaturization, high frequency, high performance, low power consumption, and low cost. The traditional surface acoustic wave filter (SAW) has a large insertion loss in the high frequency band above 2.4GHz, and the dielectric filter has good performance but is too large. Film Bulk Acoustic Resonator (FBAR) technology is a new radio frequency device technology that has emerged in recent years with the improvement of processing technology and the rapid development of modern wireless communication technology, especially personal wireless communication technology. It has a very high quality factor Q value (above 1000) and can be integrated ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H03H3/02H03H9/02H03H9/17
CPCH03H3/02H03H9/02015H03H9/171H03H2003/023
Inventor 李国强
Owner HEYUAN AIFO LIGHT COMM TECH CO LTD
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