Infrared detector on basis of organic field-effect transistor and method for preparing infrared detector

An infrared detector and organic field technology, applied in the direction of organic semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc., to achieve rich content, high-sensitivity and high-response detection, and enhance the effect of absorption

Active Publication Date: 2019-02-12
UNIV OF ELECTRONIC SCI & TECH OF CHINA
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] Aiming at the problem in the prior art that the dielectric layer of the organic field effect transistor prepared by solution needs to be used in large quantities, and most of them use a large amount of toxic reagents such as chlorobenzene, toluene, chloroform and anisole, the p

Method used

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  • Infrared detector on basis of organic field-effect transistor and method for preparing infrared detector
  • Infrared detector on basis of organic field-effect transistor and method for preparing infrared detector

Examples

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Example Embodiment

[0040] Example 1:

[0041] Such as figure 1 The bottom-gate top-contact structure is shown. The materials and thickness of each layer are: the gate electrode, source electrode and drain electrode are all silver nanowires; the dielectric layer is made of silk fibroin with a thickness of 200nm; the organic semiconductor layer is carbon nano The tube is mixed with bamboo fiber (the mass fraction of bamboo fiber is 10%), and the thickness is 50nm; the thickness of the shellac encapsulation layer is 300nm. With this structure, a field effect transistor infrared detector with high sensitivity and high stability can be realized.

[0042] The preparation method of this embodiment is as follows:

[0043] ① Use detergent, acetone solution, deionized water and isopropanol solution to clean the substrate, and dry it with nitrogen after cleaning;

[0044] ②Prepare a 30nm thick silver nanowire gate electrode on the surface of the substrate;

[0045] ③70mg / ml silk fibroin solution was spin-coated on...

Example Embodiment

[0049] Example 2:

[0050] Such as figure 1 The bottom-gate top-contact structure is shown. The materials and thickness of each layer are: the gate electrode, source electrode and drain electrode are all gold nanowires; the dielectric layer uses silk fibroin with a thickness of 500nm; the organic semiconductor layer is 3- Hexylthiophene is mixed with bamboo fiber (bamboo fiber mass fraction is 5%), and the thickness is 30nm; the shellac packaging layer has a thickness of 200nm. With this structure, a field effect transistor infrared detector with high sensitivity and high stability can be realized.

[0051] The preparation method of this embodiment is as follows:

[0052] ① Use detergent, acetone solution, deionized water and isopropanol solution to clean the substrate, and dry it with nitrogen after cleaning;

[0053] ②Prepare a 30nm thick gold nanowire gate electrode on the surface of the substrate;

[0054] ③70mg / ml silk fibroin solution was spin-coated on the surface of the gate e...

Example Embodiment

[0058] Example 3:

[0059] Such as figure 1 The bottom-gate top-contact structure is shown. The materials and thickness of each layer are: gate electrode, source electrode and drain electrode are all iron nanowires; the dielectric layer is made of silk fibroin with a thickness of 600nm; the organic semiconductor layer is 6, 13-bis(triisopropylsilylethynyl)pentacene is mixed with bamboo fiber (bamboo fiber mass fraction is 8%), the thickness is 40nm, and the shellac packaging layer thickness is 200nm. With this structure, a field effect transistor infrared detector with high sensitivity and high stability can be realized.

[0060] The preparation method of this embodiment is as follows:

[0061] ① Use detergent, acetone solution, deionized water and isopropanol solution to clean the substrate, and dry it with nitrogen after cleaning;

[0062] ②Prepare 30nm thick iron nanowire gate electrode on the surface of the substrate;

[0063] ③70mg / ml silk fibroin solution was spin-coated on the ...

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Abstract

The invention discloses an infrared detector on the basis of an organic field-effect transistor and a method for preparing the infrared detector. The field-effect transistor sequentially comprises a substrate, a gate electrode, a dielectric layer, a semiconductor layer, a source electrode, a drain electrode and a packaging layer from bottom tot top. The dielectric layer is made from high-orientation silk fibroin biological materials, and the semiconductor layer is made from mixed materials with bamboo fibers and semiconductor materials. The infrared detector and the method have the advantagesthat high-orientation silk fibroin is utilized, leakage currents of the infrared detector can be effectively reduced, the dielectric properties of the dielectric layer can be effectively improved, accordingly, the detectivity can be effectively enhanced, and driving voltages of the infrared detector can be lowered; use of toxic reagents can be effectively completely eradicated by the aid of the bamboo fibers, the infrared response of the infrared detector can be enhanced owing to infrared light absorption properties of the bamboo fibers, and infrared rays can be detected by devices in a high-sensitivity and high-response manner; the infrared detector is made from the silk fibroin and the bamboo fibers and is low in cost and suitable for the field of flexible and wearable equipment and disposable bioelectronics, environments can be biologically protected, and the application range of the infrared detector can be broadened.

Description

technical field [0001] The invention belongs to the technical field of detector preparation, and in particular relates to an organic field effect tube infrared detector based on a biological dielectric layer and a biological material-doped organic semiconductor layer and a preparation method thereof. Background technique [0002] The application fields of detectors are very broad. It can be said that from space to oceans, from various complex engineering systems to people's daily necessities of life, all kinds of detectors are inseparable. Among them, photodetectors are widely used in water conservancy, astronomy, meteorology, chemical industry, and medical and health industries because they can detect infrared rays, ultraviolet rays, and visible light. Organic photodetectors belong to photoelectric conversion devices, which are detectors made of materials with photoelectric effect that can realize photoelectric conversion. Compared with traditional resistive devices, organ...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCH10K85/113H10K85/141H10K85/20H10K30/65H10K30/354H10K2102/00H10K2102/101H10K2102/102Y02E10/549
Inventor 于军胜庄昕明侯思辉邵炳尧
Owner UNIV OF ELECTRONIC SCI & TECH OF CHINA
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