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A method for in-situ and real-time diagnosis of luminescent quantum dot decay using plasma

A plasma and luminescent quantum technology, applied in thermal excitation analysis, material excitation analysis, coating, etc., can solve the problems of perovskite quantum dot luminous efficiency decline, perovskite quantum dot decay, surface defect density increase, etc. , to achieve the effects of easy practical application, improved luminous characteristics and stability, and low cost

Active Publication Date: 2020-06-12
HANSHAN NORMAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, studies on the stability of perovskite quantum dots in this regard have not been reported so far.
[0005] Because perovskite quantum dots are highly sensitive to the surrounding environment, during the process of coating quantum dots, the deposition groups will react with the surface of perovskite quantum dots, which will destroy the surface structure of perovskite quantum dots to a certain extent, causing The decline of perovskite quantum dots, at the same time, increases the density of defect states on the surface, all of which lead to a significant decrease in the luminous efficiency of perovskite quantum dots
Can plasma treatment be used to build coatings to coat perovskite quantum dots? Which plasma gas source is less destructive to perovskite quantum dots? Can the prepared coating effectively improve the stability of perovskite quantum dots? These issues remain unresolved

Method used

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  • A method for in-situ and real-time diagnosis of luminescent quantum dot decay using plasma
  • A method for in-situ and real-time diagnosis of luminescent quantum dot decay using plasma
  • A method for in-situ and real-time diagnosis of luminescent quantum dot decay using plasma

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0032] a) In a flat capacitive RF plasma enhanced chemical vapor deposition device, a quartz substrate coated with CsPbBr3 perovskite quantum dots is placed on the upper surface of the grounded lower plate (anode);

[0033] b) At room temperature, feed NH 3 Gas, chamber pressure set at 10-200Pa;

[0034] c) Add a radio frequency signal with a radio frequency power of 5-60W to the upper plate to generate NH 3 plasma;

[0035] d) Detection of CsPbBr excited by plasma glow by optical emission spectrometer 3 Green light emission signal of perovskite quantum dots, and record the green light emission intensity with NH 3 The relationship between plasma treatment time, such as figure 2 shown.

[0036] e) The results show that NH 3 Plasma-provided reactive groups for CsPbBr 3 Perovskite quantum dots have less of a recession impact.

Embodiment 2

[0038] a) In the flat capacitive radio frequency plasma enhanced chemical vapor deposition equipment, will be coated with CsPbBr 3 A quartz substrate of perovskite quantum dots is placed on the upper surface of a grounded lower plate (anode);

[0039] b) At room temperature, pass through O 2 Gas, chamber pressure set at 10-200Pa;

[0040] c) Add a radio frequency signal with a radio frequency power of 5-60W to the upper plate to generate O 2 plasma.

[0041] d) Detection of CsPbBr excited by plasma glow by optical emission spectrometer 3 Green light emission signal of perovskite quantum dots, and record the green light emission intensity with O 2 The relationship between plasma treatment time, such as image 3 shown.

[0042] e) The results show that O 2 The active groups provided by the plasma will cause CsPbBr 3 Rapid decay of perovskite quantum dots.

Embodiment 3

[0044] a) In the flat capacitive radio frequency plasma enhanced chemical vapor deposition equipment, will be coated with CsPbBr 3 A quartz substrate of perovskite quantum dots is placed on the upper surface of a grounded lower plate (anode);

[0045] b) At room temperature, pass through SiH 4 and O 2 Gas, chamber pressure set at 10-200Pa;

[0046] c) Add a radio frequency signal with a radio frequency power of 5-60W to the upper plate to generate SiH 4 and O 2 Hybrid plasma.

[0047] d) Detection of CsPbBr excited by plasma glow by optical emission spectrometer 3 Green light emission signal of perovskite quantum dots, and record the green light emission intensity with SiH 4 and O 2 The relationship between mixed plasma processing time, such as Figure 4 shown.

[0048] e) The results show that SiH 4 +O 2 The active groups provided by the plasma will cause CsPbBr 3 The rapid decay of perovskite quantum dots, so the active groups provided by the mixed plasma cannot ...

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Abstract

The invention discloses a method for diagnosing light-emitting quantum dot degradation in in-situ and real-time modes by utilizing plasma. The method mainly comprises the following steps that different reaction source gases are introduced into a reaction cavity, glow discharge is generated by utilizing radio frequency signals, active reaction groups are provided, meanwhile, the glow in the plasmaglow discharge is used for exciting perovskite quantum dots, the quantum dots are enabled to generate light emission, then light on the surfaces of the perovskite quantum dots is focused by utilizinga light emission spectrometer so as to detect the light emission of the quantum dots in the in-situ and real-time modes, by recording the relation between the light emission intensity of the perovskite quantum dots and the plasma processing time of different reaction source gases, the influence caused by different active reaction groups in the plasma glow discharge on the quantum dot degradation is obtained, then a proper reaction source gas is determined so as to be used for depositing a dielectric layer on the surfaces of the quantum dots through the reaction to coat the quantum dots, and the stability of the quantum dots can be improved.

Description

technical field [0001] The invention relates to the technical field of luminescent materials, in particular to a method for in-situ and real-time diagnosis of the decay of luminescent quantum dots by using plasma. Background technique [0002] As a new type of luminescent material, luminescent quantum dots have attracted extensive attention due to their advantages such as simple preparation process, controllable morphology, high fluorescence quantum efficiency, adjustable emission wavelength, narrow emission spectrum peak width, and high optical absorption coefficient. Compared with organic-inorganic hybrid perovskite materials, all-inorganic perovskite has the advantages of higher stability and fluorescence quantum efficiency. Therefore, since 2015, the Maksym research group in Switzerland first reported all-inorganic perovskite quantum dots (CsPbX 3 , X=Cl, Br, I), in just a few years, all-inorganic perovskite quantum dots have shown great application potential in the fie...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C23C16/505C23C16/513C23C16/517C23C16/52G01N21/73
CPCC23C16/505C23C16/513C23C16/517C23C16/52G01N21/73
Inventor 黄锐林圳旭宋捷张文星
Owner HANSHAN NORMAL UNIV