Preparation method for transition-metal sulfide nanosheet sulfur vacancy

Abstract

The invention belongs to the field of defect control, and relates to a simple, moderate and accurate preparation method for a transition-metal sulfide nanosheet sulfur vacancy of a transition-metal sulfide sulfur vacancy. The preparation method comprises the following steps of: transferring a prepared transition-meta sulfide nanosheet to a substrate which can be firmly combined with the prepared transition-metal sulfide nanosheet, placing in a prepared weak oxidizing solution and soaking, then washing off the residual solution by using DI water, and drying by using a hot plate. Through using matching of electronic induction of weak oxidizing ions and formation energy of the transition-metal sulfide sulfur vacancy, construction of the sulfur vacancy can be accurately realized without introducing other types of defects. In addition, compared with a traditional physical defect control strategy, the method cannot cause wrinkle and damage of a local material. The sulfur vacancy in a transition-metal sulfide can be controlled in a large area. At the same time, the method is also compatible with a traditional CMOS technology. So, the method has great significance for exploring characteristic control of the sulfur vacancy in the transition-metal sulfide and promoting application of defect engineering.

Description

technical field [0001] The invention belongs to the field of defect control, and relates to a simple, mild and accurate preparation method of transition metal group sulfide nano sheet sulfur vacancies of transition metal group sulfide sulfur vacancies. Background technique [0002] The discovery of graphene in 2004 opened the door to the development of two-dimensional materials. Graphene is a two-dimensional material with a single carbon atomic layer, which has ultra-high carrier mobility and thermal conductivity, and excellent mechanical strength. However, the zero band gap of graphene greatly limits its development. Transition metal group dichalcogenides (TMDCs), which emerged at the same time, are also exfoliatable layered materials. With a certain band gap, its very different electrical properties cover insulators, semiconductors, semi-metals, metals and superconductors. It has great development and application space in the fields of electronics, optoelectronics, cata...

AI Technical Summary

Problems solved by technology

The defects regulated by these methods are often multi-type defect systems. In addition, physical means are extremely easy to damage materials to varying degrees; plasma etching, stretching methods, etc. are not compatible with traditional CMSO processes; in addition, most of the discovered Physical methods are difficult to achieve large-scale control of defects; high requirements for equipment and poor controllability are also one of the important reasons that limit its development

The most critical thing is that multiple types of defects seriously mislead our understanding of the regulatory performance of the same type of missing items, which restricts the development of defect engineering.

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