Preparation method for transition-metal sulfide nanosheet sulfur vacancy

A technology of transition metals and nanosheets, applied in the field of defect control, can solve the problems of high equipment requirements, material damage, poor controllability and development, etc., and achieve the effect of simple preparation method, mild preparation method, precise preparation and regulation

Active Publication Date: 2019-03-12
UNIV OF SCI & TECH BEIJING
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The defects regulated by these methods are often multi-type defect systems. In addition, physical means are extremely easy to damage materials to varying degrees; plasma etching, stretching methods, etc. are not compatible with traditional CMSO processes; in addition, most of the discovered Physical methods are difficult to achieve large-scale con

Method used

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  • Preparation method for transition-metal sulfide nanosheet sulfur vacancy
  • Preparation method for transition-metal sulfide nanosheet sulfur vacancy

Examples

Experimental program
Comparison scheme
Effect test

Example Embodiment

[0049] Example 1:

[0050] S1: Prepare a single layer of molybdenum disulfide on the target substrate:

[0051] S1.1: A molybdenum disulfide nanosheet with a thickness of 100 nanometers is selected and transferred to a silicon wafer to obtain a silicon wafer containing molybdenum disulfide nanosheets with a size of 30 microns.

[0052] S1.2: Spin-coating PMMA glue on the silicon wafer in S1, dry at 120°C for 2 min, and put it in a 1:5 FH solution to etch away the silicon dioxide to obtain a PMMA film with molybdenum disulfide.

[0053] S1.3: Use a clean silicon wafer to remove the PMMA film in deionized water and wash it repeatedly 15 times. Finally, remove the cleaned PMMA film on the marked target substrate, dry it at 120 ℃ for 10 min, and then remove it with acetone at 100 ℃ PMMA to obtain a single layer of molybdenum disulfide on the target substrate.

[0054] S1.4: Spin-coating PMMA on the target substrate again, drying at 180 ℃ for 2 minutes, using electron beam precision exposur...

Example Embodiment

[0061] Example 2

[0062] S1: Preparation of tungsten disulfide on the target substrate:

[0063] In S1.1, a tungsten disulfide nanosheet with a thickness of 20 nanometers is selected and transferred to a silicon wafer to obtain a silicon wafer containing tungsten disulfide nanosheets.

[0064] S1.2: Spin-coating PMMA glue on the silicon wafer containing tungsten disulfide nanosheets obtained in S1, dry at 100 ℃ for 6 minutes, and put it in a 1:5 FH solution to etch the silicon dioxide to obtain tungsten disulfide PMMA film of nanosheets.

[0065] S1.3: Use a clean silicon wafer to remove the PMMA film in deionized water and wash it 15 times. Finally, remove the cleaned PMMA film on a marked sapphire substrate, dry at 120 ℃ for 10 min, and then remove it with acetone at 100 ℃ PMMA to obtain a single layer of tungsten disulfide on the target substrate.

[0066] S1.4: Spin-coating PMMA onto the target substrate again, dry at 180 ℃ for 2 min, use electron beam precise exposure technology...

Example Embodiment

[0072] Example 3

[0073] S1: Preparation of molybdenum monoselenide on the target substrate:

[0074] In S1.1, molybdenum diselenide nanosheets with a thickness of 60 nanometers are selected and transferred to a silicon wafer to obtain a silicon wafer containing molybdenum diselenide nanosheets with a size of 80 microns.

[0075] S1.2: Spin-coating PMMA glue on the silicon wafer in S1, dry at 120 ℃ for 2 min, put it in a 1:5 FH solution to etch away the silicon dioxide, and obtain a PMMA film with molybdenum diselenide nanosheets .

[0076] S1.3: Use a clean silicon wafer to remove the PMMA film in deionized water, and repeat the cleaning 15 times. Finally, remove the cleaned PMMA film on a marked PET substrate, dry at 120 ℃ for 10 min, and then remove it with acetone at 100 ℃ PMMA to obtain a single layer of molybdenum diselenide on a PET substrate.

[0077] S1.4: Spin-coating PMMA onto the target substrate again, drying at 180 ℃ for 2 minutes, using electron beam precision exposure...

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Abstract

The invention belongs to the field of defect control, and relates to a simple, moderate and accurate preparation method for a transition-metal sulfide nanosheet sulfur vacancy of a transition-metal sulfide sulfur vacancy. The preparation method comprises the following steps of: transferring a prepared transition-meta sulfide nanosheet to a substrate which can be firmly combined with the prepared transition-metal sulfide nanosheet, placing in a prepared weak oxidizing solution and soaking, then washing off the residual solution by using DI water, and drying by using a hot plate. Through using matching of electronic induction of weak oxidizing ions and formation energy of the transition-metal sulfide sulfur vacancy, construction of the sulfur vacancy can be accurately realized without introducing other types of defects. In addition, compared with a traditional physical defect control strategy, the method cannot cause wrinkle and damage of a local material. The sulfur vacancy in a transition-metal sulfide can be controlled in a large area. At the same time, the method is also compatible with a traditional CMOS technology. So, the method has great significance for exploring characteristic control of the sulfur vacancy in the transition-metal sulfide and promoting application of defect engineering.

Description

technical field [0001] The invention belongs to the field of defect control, and relates to a simple, mild and accurate preparation method of transition metal group sulfide nano sheet sulfur vacancies of transition metal group sulfide sulfur vacancies. Background technique [0002] The discovery of graphene in 2004 opened the door to the development of two-dimensional materials. Graphene is a two-dimensional material with a single carbon atomic layer, which has ultra-high carrier mobility and thermal conductivity, and excellent mechanical strength. However, the zero band gap of graphene greatly limits its development. Transition metal group dichalcogenides (TMDCs), which emerged at the same time, are also exfoliatable layered materials. With a certain band gap, its very different electrical properties cover insulators, semiconductors, semi-metals, metals and superconductors. It has great development and application space in the fields of electronics, optoelectronics, cata...

Claims

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Application Information

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IPC IPC(8): C01B17/20C01F17/00C01G1/12C01G39/06C01G41/00C01B19/04B82Y40/00
CPCB82Y40/00C01B17/20C01B19/007C01G1/12C01G39/06C01G41/00C01P2004/64C01F17/288
Inventor 张跃高丽张铮廖庆亮高放放张先坤柳柏杉杜君莉于慧慧洪孟羽欧洋肖建坤
Owner UNIV OF SCI & TECH BEIJING
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