A method for enhancing the p-type conductive doping of boron nitride thin film in a nitrogen-rich atmosphere

A technology of boron nitride and hexagonal boron nitride, applied in chemical instruments and methods, diffusion/doping, gaseous chemical plating, etc., can solve problems such as difficulty in improving, and achieve the effect of both efficiency and quality

Active Publication Date: 2020-12-08
XIAMEN UNIV
View PDF6 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It has been shown that p-type conductance can be detected by using Mg-doped h-BN: the conduction current reaches ~12μA and the hole concentration is ~1.7×1014cm -2 , but it is difficult to improve

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • A method for enhancing the p-type conductive doping of boron nitride thin film in a nitrogen-rich atmosphere
  • A method for enhancing the p-type conductive doping of boron nitride thin film in a nitrogen-rich atmosphere
  • A method for enhancing the p-type conductive doping of boron nitride thin film in a nitrogen-rich atmosphere

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] The steps of this embodiment are as follows:

[0035] 1. Establish a three-temperature zone chemical vapor deposition system ( figure 1 ):

[0036] 1) The system consists of three independent temperature zones and independent gas pipelines. Each temperature zone is about 30cm long, and the center 10cm is a constant temperature zone. The space between the two temperature zones is filled with ceramic fiber insulation materials (such as asbestos) to block the mutual thermal influence of adjacent temperature zones, and each temperature zone is independently controlled. Temperature module control.

[0037] 2) The large quartz tube (outer tube) is used as the reaction chamber, the length of which is longer than the total length of the three temperature zones, and is used to provide a vacuum environment and the gas environment of the overall cavity and to generate deposition reactions; the small tube (inner tube) constitutes an independent ventilation pipeline, directly Con...

Embodiment 2

[0048] The difference between embodiment 2 and embodiment 1 is that the formation of B vacancies and replacement doping are carried out sequentially, including the following steps:

[0049] 1) Formation of B vacancies:

[0050] ① Set up a chemical vapor deposition system, including an outer tube and an inner tube. The inner tube is sleeved inside the outer tube and is shorter than the outer tube. The inner tube is provided with a BN precursor temperature zone, and the BN precursor temperature zone is equipped with a BN precursor, the BN precursor is a compound containing B and N, or an inorganic or organic compound containing B and N at the same time; the area between the outlet end of the inner tube and the outlet end of the outer tube forms a reaction chamber, A growth substrate is provided in the reaction chamber;

[0051] ② Formation of a nitrogen-rich atmosphere: a nitrogen-rich atmosphere is formed through a carrier gas, which includes a N-containing gas or a N-containi...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses a method for reinforcing boron nitride film p-type conductive doping in a nitrogen-enriched atmosphere. The method comprises the following steps: firstly, promoting the acceptor level of B vacancy in a hexagonal boron nitride crystal at the nitrogen-enriched atmosphere; then sequentially performing through displacement doping of Mg in hexagonal boron nitride crystal lattices to reinforce the p-type conductive performance of a hexagonal boron nitride film.

Description

technical field [0001] The invention relates to a method for successively enhancing the p-type conductive doping of boron nitride thin film by nitrogen-rich atmosphere and Mg doping. Background technique [0002] Hexagonal boron nitride (h-BN), known as "white graphene", has a graphene-like structure: a one-atom-thick h-BN is a two-dimensional film of sp2 hybridization, which is alternately arranged by boron and nitrogen atoms composed of honeycomb lattice structure. With high thermal conductivity, mechanical strength, optical transparency, chemical stability, and deep ultraviolet lasing, it has many potential applications. Especially in the field of deep ultraviolet (DUV) optoelectronics, it has a good application prospect due to its large band gap (~6eV) and close to zero polarization field. However, h-BN is only atomically thin. Therefore, the research on this ultra-thin and low-dimensional material meets the size requirements of the times for materials and devices and ...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/38C30B25/00C30B31/08C23C16/34C23C16/455
CPCC23C16/342C23C16/455C30B25/00C30B29/38C30B31/08
Inventor 蔡端俊王跃锦刘国振郝卓然
Owner XIAMEN UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap