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Method for reinforcing boron nitride film p-type conductive doping in nitrogen-enriched atmosphere

A technology of boron nitride and hexagonal boron nitride, applied in chemical instruments and methods, diffusion/doping, gaseous chemical plating, etc., can solve problems such as difficulty in improving, and achieve the effect of both efficiency and quality

Active Publication Date: 2019-03-26
XIAMEN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

It has been shown that p-type conductance can be detected by using Mg-doped h-BN: the conduction current reaches ~12μA and the hole concentration is ~1.7×1014cm -2 , but it is difficult to improve

Method used

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  • Method for reinforcing boron nitride film p-type conductive doping in nitrogen-enriched atmosphere
  • Method for reinforcing boron nitride film p-type conductive doping in nitrogen-enriched atmosphere
  • Method for reinforcing boron nitride film p-type conductive doping in nitrogen-enriched atmosphere

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Embodiment 1

[0034] The steps of this embodiment are as follows:

[0035] 1. Establish a three-temperature zone chemical vapor deposition system ( figure 1 ):

[0036] 1) The system consists of three independent temperature zones and independent gas pipelines. Each temperature zone is about 30cm long, and the center 10cm is a constant temperature zone. The two temperature zones are filled with ceramic fiber insulation material (such as asbestos) to block the mutual thermal influence of adjacent temperature zones, and each temperature zone is independently controlled Temperature module control.

[0037] 2) The large quartz tube (outer tube) is used as the reaction chamber, and the length is longer than the total length of the three temperature zones. It is used to provide a vacuum environment and the gas environment of the overall chamber and cause deposition reactions; the small tube (inner tube) constitutes an independent vent line, directly Connected with an independent gas circuit, the lengt...

Embodiment 2

[0048] The difference between Embodiment 2 and Embodiment 1 is that the formation of B vacancies and substitution doping are performed sequentially, including the following steps:

[0049] 1) Formation of B vacancy:

[0050] ① Set up a chemical vapor deposition system, including an outer tube and an inner tube. The inner tube is sleeved inside the outer tube and has a shorter length than the outer tube. The inner tube is provided with a BN precursor temperature zone, and the BN precursor temperature zone is provided BN precursor, the BN precursor is a compound containing B and N, or an inorganic or organic compound containing both B and N; the area between the outlet end of the inner tube and the outlet end of the outer tube forms a reaction chamber, A growth substrate is provided in the reaction chamber;

[0051] ② Formation of nitrogen-rich atmosphere: a nitrogen-rich atmosphere is formed by a carrier gas, the carrier gas includes N-containing gas or N-containing mixed gas;

[0052...

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Abstract

The invention discloses a method for reinforcing boron nitride film p-type conductive doping in a nitrogen-enriched atmosphere. The method comprises the following steps: firstly, promoting the acceptor level of B vacancy in a hexagonal boron nitride crystal at the nitrogen-enriched atmosphere; then sequentially performing through displacement doping of Mg in hexagonal boron nitride crystal lattices to reinforce the p-type conductive performance of a hexagonal boron nitride film.

Description

Technical field [0001] The invention relates to a method for sequentially enhancing p-type conductive doping of a boron nitride film with a nitrogen-rich atmosphere and Mg doping. Background technique [0002] Hexagonal boron nitride (h-BN), known as "white graphene", has a structure similar to graphene: a single-atom-thick h-BN is a sp2 hybrid two-dimensional film with boron and nitrogen atoms alternately arranged The honeycomb lattice structure is constructed. With high thermal conductivity, mechanical strength, optical transparency, chemical stability and deep ultraviolet lasing, it has many potential applications. Especially in the field of deep ultraviolet (DUV) optoelectronics, it has a good application prospect due to its large band gap (~6eV) and near-zero polarization field. However, h-BN is only atomically thin. Therefore, the research on this ultra-thin low-dimensional material conforms to the size requirements of the era for materials and devices and gradually tends...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/38C30B25/00C30B31/08C23C16/34C23C16/455
CPCC23C16/342C23C16/455C30B25/00C30B29/38C30B31/08
Inventor 蔡端俊王跃锦刘国振郝卓然
Owner XIAMEN UNIV
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