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A kind of lanthanum, dysprosium, cerium co-doped yttrium lutetium silicate scintillation material and its crystal growth method

A technology of yttrium lutetium silicate and scintillation material, which is applied in the directions of crystal growth, polycrystalline material growth, single crystal growth, etc., can solve the problems of unqualified optical quality, reduced scintillation performance, weak light transmittance, etc., and achieves the promotion of charge migration. and energy level transition, ensuring uniformity and stability, avoiding the effect of excessive oxidation

Active Publication Date: 2020-01-31
安徽晶宸科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The yield of yttrium lutetium silicate crystal grown by the prior art is low, mainly because of three reasons: (1) in the process of preparing yttrium lutetium silicate growth raw material, it is easy to introduce impurities to reduce the segregation coefficient and doping concentration of doping ions, Leading to unqualified optical quality; (2) In the growth process of yttrium lutetium silicate, relying on manual intervention to control the growth, the difficulty coefficient of annealing and cooling is high, it is easy to cause crystal cracking, and the repeatability is poor, which is not conducive to the consistency of growth batches , it is difficult to meet the large-scale production; (3) In order to improve the luminous intensity of yttrium lutetium silicate, it is necessary to carry out high-temperature oxygen diffusion on the crystal to make up for the oxygen defects in the crystal lattice, and excessive oxidation will occur, resulting in the luminescence center Ce 3+ Oxidized to Ce 4+ , resulting in weak light transmittance at 420nm and reduced scintillation performance

Method used

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  • A kind of lanthanum, dysprosium, cerium co-doped yttrium lutetium silicate scintillation material and its crystal growth method
  • A kind of lanthanum, dysprosium, cerium co-doped yttrium lutetium silicate scintillation material and its crystal growth method
  • A kind of lanthanum, dysprosium, cerium co-doped yttrium lutetium silicate scintillation material and its crystal growth method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0021] S1: 0.005 parts of La in moles 2 o 3 , 0.005 copies of Dy 2 o 3 , 0.06 parts of CeO 2 , 0.096 copies of Y 2 o 3 , 0.864 Lu 2 o 3 , 1 part of SiO 2 After mixing evenly, the temperature was raised to 1100°C at a rate of 10°C / min, and calcined for 30 hours. The chemical formula of solid phase synthesis was La 0.01 Dy 0.01 Ce 0.06 (Lu 0.9 Y 0.1 ) 1.92 SiO 5 polycrystalline block;

[0022] Its solid phase synthesis reaction equation:

[0023]

[0024] S2: At room temperature, press the polycrystalline block obtained in S1 with a pressure of 300 MPa, and then fill nitrogen gas at a flow rate of 5 L / min to 0.15 MPa, and then heat the polycrystalline material to a molten state under the nitrogen atmosphere to obtain an initial melt for crystal growth;

[0025] S3: Rotate the LYSO seed crystal in the direction at a speed of 6rpm, and pull it up at a pulling speed of 0.8mm / h. When the crystal diameter grows to 90mm, the rotating speed and pulling speed gradual...

Embodiment 2

[0027] With embodiment 1, difference is as follows:

[0028] S1: Dilute 0.01 parts of La in moles 2 o 3 , 0.01 copies of Dy 2 o 3 , 0.04 parts of CeO 2 , 0.048 copies of Y 2 o 3 , 0.912 Lu 2 o 3 , 1 part of SiO 2 After mixing evenly, the temperature was raised to 1250°C at a rate of 10°C / min, and calcined for 65 hours. The chemical formula of solid-phase synthesis was La 0.02 Dy 0.02 Ce 0.04 (Lu 0.95 Y 0.05 ) 1.92 SiO 5 polycrystalline block;

[0029] Its solid phase synthesis reaction equation:

[0030]

[0031] S2: The compression pressure is 460MPa, the protective gas is helium and the gas flow rate is 18L / min;

[0032] S3: the seed crystal is La 0.02 Dy 0.02 Ce 0.04 (Lu 0.95 Y 0.05 ) 1.92 SiO 5 Single crystal with orientation, the rotation speed is 18rpm, the pulling speed is 3mm / h, and the crystal diameter grows to 100mm.

Embodiment 3

[0034] With embodiment 1, difference is as follows:

[0035] S1: Dilute 0.02 parts of La in moles 2 o 3 , 0.02 copies of Dy 2 o 3 , 0.02 parts of CeO 2 , 0.0095 copies of Y 2 o 3 , 0.9405 Lu 2 o 3 , 1 part of SiO 2After mixing evenly, the temperature was raised to 1400°C at a rate of 10°C / min, and calcined for 100 hours. The chemical formula of solid phase synthesis was La 0.04 Dy 0.04 Ce 0.02 (Lu 0.99 Y 0.01 ) 1.9 SiO 5 polycrystalline block;

[0036] Its solid phase synthesis reaction equation:

[0037]

[0038] S2: The compression pressure is 630MPa, the protective gas is argon and the gas flow rate is 30L / min;

[0039] S3: the seed crystal is La 0.04 Dy 0.04 Ce 0.02 (Lu 0.99 Y 0.01 ) 1.9 SiO 5 Single crystal with direction, the rotation speed is 30rpm, the pulling speed is 5mm / h, and the crystal diameter grows to 110mm.

[0040] The following table is the effect analysis of embodiment 1-3:

[0041]

[0042] It can be seen from the above tab...

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Abstract

The invention discloses a lanthanum, dysprosium and cerium co-doped lutetium-yttrium orthosilicate scintillating material and a crystal growth method of the lanthanum, dysprosium and cerium co-doped lutetium-yttrium orthosilicate scintillating material. The chemical formula of the scintillating crystal is La2pDy2qCe2m(Lu(1-n)Yn)2(1-p-q-m)SiO5, wherein p is more than 0 and less than or equal to 0.02, q is more than 0 and less than or equal to 0.02, m is more than 0 and less than or equal to 0.03, n is more than or equal to 0.01 and less than or equal to 0.1, p, q and m meet the condition that pplus q plus m is more than 0 and less than or equal to 0.05; the growth method is as follows: S1: synthesizing a poly-crystal material block at the solid phase at the high temperature; S2: compressing and fusing the poly-crystal at the atmosphere of the protective gas; and S3: growing at equal diameter, and using a PID algorithm to automatically cool and anneal. The Dy and the La are doped in LYSO, the vacancy for growing the crystal is increased, the excessive oxidation of the crystal is avoided, the scintillating performance of the crystal is guaranteed, the luminescence spectrum of the crystal is expanded, and the case substitution rates of the ions Lu and Y are increased by means of cold isostaitc pressing, the automatic temperature-controlled growth is implemented through the PID algorithm, and the consistency of the crystals growing in batches is guaranteed.

Description

technical field [0001] The invention relates to the technical field of scintillation materials and crystal growth, in particular to a yttrium-lutetium silicate scintillation material co-doped with lanthanum, dysprosium and cerium and a crystal growth method thereof. Background technique [0002] Yttrium-lutetium silicate scintillation crystal is a new type of scintillation crystal that has only appeared in the past 10 years. It is widely used in various radioactive detection fields due to its high light output, fast luminescence decay, high effective atomic number, and high density. At present, the only domestic units capable of producing yttrium-lutetium silicate scintillation crystals are Shanghai Institute of Silicon Research, China Electronics 26 Institute and Beijing Glass Research Institute, and the product supply is far from meeting the domestic market demand. The yield of yttrium lutetium silicate crystal grown by the prior art is low, mainly because of three reasons...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C30B29/22C30B1/10C09K11/79
CPCC09K11/7774C30B1/10C30B29/22
Inventor 彭方郭玉勇王晓梅马孙明
Owner 安徽晶宸科技有限公司
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