37results about How to "Increase vacancies" patented technology

The invention discloses a superconductor cold pressing connecting method, relates to a superconductor connecting method, and belongs to the technical field of superconductor connecting. The superconductor cold pressing connecting method solves the problems that a high-temperature superconducting material obtained according to an existing welding method is low in strength and the superconducting performance is reduced. The superconductor cold pressing connecting method comprises the first step of rubbing down and polishing the end faces of two circular-bar-shaped superconductors, the second step of processing superconductor powder into a cake shape, and the third step of carrying out welding in an ice pressure welding mode. The superconductor cold pressing connecting method is used for connecting the superconductors.

The invention relates to a method for preparing environment barrier coating at a low temperature. In the method, organosilicon as a precursor is mixed with proper powder to form filling materials, and then a proper amount of a sintering additive is added to prepare slurry. Specifically, organosilicon is added with 40%-80% of environment barrier coating powder and 2%-10% of the sintering additive.After ball milling for material mixing, a green coating can be prepared. On the basis of different environment barrier coating powder, a compact coating can be obtained by sintering the powder at a low temperature ranging from 1200DEG C to 1350DEG C. The method of the invention prepares the coating at a temperature of 100-200DEG C lower than the regular slurry method, so that carbon fibers or silicon carbide fibers in matrix materials can be protected effectively. In addition, the adding of the sintering additive does not influence the high temperature environment performance of the coating prepared.

The invention discloses a chlorine evolution accelerator and a preparation method thereof. The chlorine evolution accelerator is prepared from three or more of a neodymium compound, a europium compound, an ytterbium compound, a gadolinium compound and a dysprosium compound. The chlorine evolution accelerator is added to an electrode of a sodium hypochlorite generator so that the electrode of the sodium hypochlorite generator is high in chlorine evolution speed, high in electrolysis efficiency and low in operation cost. The invention aims at providing the preparation method of the chlorine evolution accelerator, the reparation method is simple in process, easy to operate, and conductive to large-scale and industrialized production.

The invention discloses a lanthanum, dysprosium and cerium co-doped lutetium-yttrium orthosilicate scintillating material and a crystal growth method of the lanthanum, dysprosium and cerium co-doped lutetium-yttrium orthosilicate scintillating material. The chemical formula of the scintillating crystal is La2pDy2qCe2m(Lu(1-n)Yn)2(1-p-q-m)SiO5, wherein p is more than 0 and less than or equal to 0.02, q is more than 0 and less than or equal to 0.02, m is more than 0 and less than or equal to 0.03, n is more than or equal to 0.01 and less than or equal to 0.1, p, q and m meet the condition that pplus q plus m is more than 0 and less than or equal to 0.05; the growth method is as follows: S1: synthesizing a poly-crystal material block at the solid phase at the high temperature; S2: compressing and fusing the poly-crystal at the atmosphere of the protective gas; and S3: growing at equal diameter, and using a PID algorithm to automatically cool and anneal. The Dy and the La are doped in LYSO, the vacancy for growing the crystal is increased, the excessive oxidation of the crystal is avoided, the scintillating performance of the crystal is guaranteed, the luminescence spectrum of the crystal is expanded, and the case substitution rates of the ions Lu and Y are increased by means of cold isostaitc pressing, the automatic temperature-controlled growth is implemented through the PID algorithm, and the consistency of the crystals growing in batches is guaranteed.

The invention discloses a method for reinforcing boron nitride film p-type conductive doping in a nitrogen-enriched atmosphere. The method comprises the following steps: firstly, promoting the acceptor level of B vacancy in a hexagonal boron nitride crystal at the nitrogen-enriched atmosphere; then sequentially performing through displacement doping of Mg in hexagonal boron nitride crystal lattices to reinforce the p-type conductive performance of a hexagonal boron nitride film.

The invention discloses a modified LiNi 0.6 co 0.2 mn 0.2 o 2 A preparation method and product of a ternary cathode material and a battery. The preparation method of the ternary positive electrode material includes: first introducing magnesium element when preparing the precursor of nickel cobalt manganese hydroxide, and then using ammonium metatungstate aqueous solution as complexing agent in the later stage of co-precipitation reaction, using ammonium metatungstate in the After hydrolysis in water, ammonia ions and tungstate ions appear, and ammonia ions are used as complexing agents to compensate for the co-precipitation reaction, while tungstate ions are partially deposited on the surface of the nickel-cobalt-manganese hydroxide precursor formed in the precipitation reaction stage, The in-situ introduction of tungsten element is realized, followed by lithiation treatment to obtain ternary cathode powder with tungsten element on the surface. In the present invention, by adding magnesium element and in-situ doping tungsten element on the surface, the charging and discharging performance, cycle performance and the like of the obtained modified ternary positive electrode powder are effectively improved.