Preparation method of single crystal copper foil with controlled crystal plane exposure orientation
A technology of crystal surface and copper foil, which is applied in the field of preparation of single crystal copper foil, can solve the problems of high elevation, difficulty, easy deformation foil, etc., and achieve the effect of simple equipment construction, simple operation and uniform product
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Embodiment 1
[0035] (1) Select high-purity polycrystalline copper foil with no residual stress removed as raw material, and use X-ray diffraction technology to detect the exposure of crystal planes on the surface of copper foil;
[0036] (2) The copper foil raw material obtained in (1) is subjected to surface treatment to remove the oxide layer (pickling, water washing, drying, etc.), and polycrystalline copper with more {100} crystal faces exposed on the surface is proved by diffraction. foil, and choose argon gas containing 0.1% oxygen as the atmosphere;
[0037] (3) using the atmosphere described in (2) for pretreatment, and performing a slight oxidation treatment at 200° C. for 30 minutes in the oxygen-containing atmosphere;
[0038] (4) Under the premise of satisfying the operating conditions in (3), use the porous alumina substrate wrapped in graphite paper to support the copper foil, set the total gas pressure to 600Pa, and use the moving temperature zone for annealing. The moving t...
Embodiment 2
[0043] (1) Select high-purity polycrystalline copper foil with no residual stress removed as raw material, and use X-ray diffraction technology to detect the exposure of crystal planes on the surface of copper foil;
[0044] (2) The copper foil raw material obtained in (1) is subjected to surface treatment to remove the oxide layer (pickling, water washing, drying, etc.), and polycrystalline copper with more {111} crystal planes exposed on the surface is proved by diffraction. foil, and choose a hydrogen mixture containing 40% argon as the atmosphere;
[0045] (3) Pretreatment is carried out using the atmosphere described in (2), and a sufficient reduction treatment is carried out at 600° C. for 2 hours in the mixed atmosphere;
[0046](4) Under the premise of satisfying the operating conditions in (3), use the porous alumina substrate wrapped in graphite paper to support the copper foil, set the total gas pressure to 600Pa, and use the moving temperature zone for annealing. T...
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