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Binary mixed solvent system and application of binary mixed solvent system to preparation of perovskite material

A perovskite material and binary mixing technology, applied in semiconductor/solid-state device manufacturing, electrical components, electrical solid-state devices, etc., can solve problems such as high boiling point, unstable solution state, and restrictive preparation, so as to simplify the process flow, Reduce the effect of uncontrollable factors and damage

Active Publication Date: 2019-04-09
KUNSHAN GCL OPTOELECTRONIC MATERIAL CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0003] At present, the existing perovskite one-step spin coating method usually uses N,N-dimethylformamide (DMF), dimethyl sulfoxide (DMSO), and γ-butyrolactone (GBL) as solvent systems. High toxicity, high boiling point, and the solvent is not volatile
At the same time, the toxicity factor of solvent is also one of the limitations restricting the development of this kind of materials.
[0004] The limitation of the existing method of perovskite precursor solution mainly lies in that the method of preparing perovskite precursor solution by one-step spin coating only involves high boiling point solvents, which are highly toxic and have poor solubility, which always restricts high concentration The preparation of perovskite precursor solution, and the solution state is unstable, which limits the large-scale industrial production, and fails to enter the actual production practice from the laboratory

Method used

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  • Binary mixed solvent system and application of binary mixed solvent system to preparation of perovskite material
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  • Binary mixed solvent system and application of binary mixed solvent system to preparation of perovskite material

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preparation example Construction

[0050] Correspondingly, another aspect of the embodiments of the present invention also provides a method for preparing a perovskite film, which includes:

[0051] A perovskite precursor solution is provided, the perovskite precursor solution includes a perovskite precursor and a solvent, and the solvent includes an amine compound and ethanol with a volume ratio of 0.1-1:0.1-2;

[0052] Perform film-forming treatment on the perovskite precursor solution at room temperature to prepare a perovskite film.

[0053] In some embodiments, the preparation method specifically includes: forming a film on the perovskite precursor solution by one-step spin coating method at room temperature, wherein the spin coating speed used is 1000-5000 rpm, The acceleration is 500-10000 rpm / s, and the spin-coating time is 5-30s.

[0054] Further, the method for preparing the perovskite film by the low-boiling point binary mixed solvent system is various, and various techniques such as scraping coatin...

Embodiment 1

[0059] Embodiment 1 prepares perovskite precursor solution

[0060] see figure 1 As shown, the process of preparing the perovskite precursor solution using a low boiling point binary mixed system solvent: the concentration of the precursor solution is 0.5mol / L, and the molar ratio is 1.2:1 lead iodide (PbI 2 ) and methyl iodide (CH 3 NH 3 1) Dissolved in a mixed solvent of methylamine-ethanol-acetonitrile with a volume ratio of 0.5:1, through continuous ultrasonication and stirring, the two are fully dissolved in the binary low-boiling point system, and finally a clear and transparent perovskite can be obtained ore precursor solution.

Embodiment 2

[0061] Embodiment 2 prepares perovskite precursor solution

[0062] The process of preparing the perovskite precursor solution using a low-boiling point-high boiling point mixed system solvent: the concentration of the precursor solution is 1mol / L, and the molar ratio is 1:0.1 lead iodide (PbI 2 ) and methyl iodide (CH 3 NH 3 I) Dissolved in a mixed solvent of methylamine-ethanol with a volume ratio of 0.1:0.1, through continuous ultrasonic and stirring, the two are fully dissolved in the binary low-boiling point system, and finally a clear and transparent perovskite can be obtained precursor solution.

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Abstract

The invention discloses a binary mixed solvent system and an application of the binary mixed solvent system to the preparation of a perovskite material. The binary mixed solvent system comprises an amine compound and ethanol. The invention further discloses a perovskite precursor solution, which comprises a perovskite precursor and a solvent, wherein the solvent includes the amine compound and theethanol. The invention further discloses a preparation method of a perovskite film. The preparation method comprises the steps of carrying out film forming treatment on the perovskite precursor solution at the room temperature to prepare the perovskite film. The amine compound-ethanol binary mixed solvent system is used for preparing a precursor solvent of the perovskite film by a one-step spin coating method, so that the preparation process of the precursor solution is simplified, the occurrence of uncontrollable factors is reduced, and the large-area high-quality perovskite film can be prepared conveniently and rapidly; and the obtained perovskite film does not need any annealing post-treatment process, so that the technological process is simplified.

Description

technical field [0001] The invention belongs to the field of perovskite precursor solution preparation and its manufacture, and in particular relates to a brand-new low-boiling point binary mixed solvent system and its method for rapidly preparing perovskite precursor solution, as well as the preparation of perovskite materials. use in . Background technique [0002] In recent years, with the rapid development of the field of third-generation thin-film solar cells, based on CH 3 NH 3 PB 3 This type of organic-inorganic hybrid perovskite material is a new star in the field of photovoltaics. Due to its low cost, solution processing, high light absorption performance, and excellent electronic properties, its photoelectric conversion The efficiency has increased dramatically from 3.8% in 2009 to 23.2% today, showing unprecedented advantages in the future green energy field. It is well known that the quality of the perovskite active layer directly restricts its battery perfor...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/00H10K99/00
CPCH10K71/15Y02E10/549
Inventor 刘秋菊葛文奇范春琳白华田清勇范斌
Owner KUNSHAN GCL OPTOELECTRONIC MATERIAL CO LTD
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