Coplanar Photodetector for Vertically Coupled Wavelength Division Multiplexing Optical Signal Reception

Abstract

The invention discloses a vertical coupled wavelength division multiplexing light signal reception coplanar photoelectric detector, relates to the fields of semiconductor photoelectric devices and optical interconnection, and is capable of integrating with large-area single chips of microelectronic integrated circuits for the field of space communication, particularly the low cost, low power consumption, strong radiation resistance and easiness in packing and forming linear array and planar array structures of wavelength division multiplexing photoelectric detectors. According to the structureof the vertical coupled wavelength division multiplexing light signal reception coplanar photoelectric detector, a p type doping interpolation area and an n type doping interpolation area are dopingareas which are transversely and sequentially injected in top-layer silicon through photoetching ions, and a gap therebetween is an intrinsic absorption area; a two-dimensional coupling grating area is a two-dimensional grating structure which has different periods in parallel and vertical directions of a doping area strip on an incidence plane by the adoption of a dry etching technology after ultra-violet lithography is carried out on middle parts of electrodes on two side of an absorption material area; and periods and etching depths of two-dimension gratings to ensure that a Bragg diffraction condition is satisfied and then vertical incident light is converted to a horizontal direction.

Description

technical field [0001] The invention relates to the field of semiconductor optoelectronic devices and the field of optical interconnection, and specifically designs a photoelectric detector capable of detecting multi-channel wavelength division multiplexing space communication and vertically incident optical signals and having high-speed performance. Background technique [0002] With the development of optoelectronic technology, the speed of data transmission has been further improved. The good absorption performance of silicon-based optoelectronic materials in the near-infrared and visible light bands makes silicon-based materials with low cost, high quality, high reliability and low noise the best choice for visible light detection. In order to achieve high speed, it is often necessary to reduce the size of the device to reduce the RC constant of the system, and reduce the thickness of the PIN intrinsic layer to reduce the carrier transit time. For vertically incident de...

AI Technical Summary

Problems solved by technology

[0003] PIN or PN type high-speed detectors with traditional vertical structure reduce the carrier transit time to obtain high-speed performance, but also reduce the thickness of the absorption region, resulting in low long-wavelength responsivity of the device; in addition, reducing the device size to obtain low RC Constant, high cut-off frequency performance, but also reduces the size of the light-passing surface of the device, and cannot be a large-aperture WDM detector

Although the coplanar detection device can solve the problem of size limitation, the photosensitive area can be effectively increased through the PN alternating coplanar multi-pair junction structure, but the PN junction and electric field are still concentrated on the device surface, and the length of light absorption is still very short, and the long wavelength The response is still low, and the surface effect will introduce a large amount of dark current, increasing the device capacitance

Therefore, coplanar detectors can only be used for short-wave high-speed detection, and are not suitable for near-infrared large-aperture space light detection and communication fields.

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