Ultrapure low radioactive spheroid beta silicon nitride powder as well as manufacturing method and application thereof

A technology of silicon nitride powder and silicon nitride powder, which is applied in the fields of chemical instruments and methods, nitrogen compounds, inorganic chemistry, etc., can solve the problems of reduced reliability and use temperature not higher than 80°C, and achieve high thermal conductivity Effect

Pending Publication Date: 2019-05-17
QINGDAO CUP NEW MATERIALS CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The data pointed out that for most electronic devices, the operating temperature cannot be higher than 80°C; above this temperature, the reliability will be reduced by half for every 10°C increase in temperature; and chip failure caused by system overheating accounts for the majority of chip failure. More than 50% of the reasons, it can be seen that the heat dissipation problem of the chip is the bottleneck problem restricting the further development of electronic products

Method used

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  • Ultrapure low radioactive spheroid beta silicon nitride powder as well as manufacturing method and application thereof
  • Ultrapure low radioactive spheroid beta silicon nitride powder as well as manufacturing method and application thereof
  • Ultrapure low radioactive spheroid beta silicon nitride powder as well as manufacturing method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0091] Example 1 Method for preparing high sphericity, low uranium and thorium β silicon nitride by improved combustion synthesis

[0092] Mix low-uranium, thorium high-purity silicon powder (uranium2 Under the atmosphere, ignite at one end to initiate a self-propagating reaction, and the reaction is completed when the sample is extended from one end to the other end, and the β-silicon nitride powder is obtained. The XRD of the powder is as follows: figure 1 shown (by figure 1 It can be seen that the silicon nitride obtained in Example 1 is almost all β phase); the resulting product is ball milled for 4 hours to obtain a β silicon nitride powder with a particle size of 2.20 μm and a sphericity of 0.91. The powder morphology and particle size are as follows: figure 2 with 3 As shown; the uranium content measured by ICP is 44ppb, the thorium content is 39ppb, and the ultra-pure β-silicon nitride powder with a particle size of 2.20μm, a sphericity of 0.91, a uranium content of ...

Embodiment 2

[0093] Example 2 Method for preparing β-silicon nitride with high sphericity, low uranium and thorium by improved carbothermal reduction method

[0094] Using low uranium and thorium carbon powder (uranium<5ppb, thorium<5ppb) and low uranium and thorium amorphous silicon oxide (uranium<5ppb, thorium<5ppb) powder as raw materials with a mass ratio of 1:2, add low uranium and thorium Additives (uranium<5ppb, thorium<5ppb), the addition ratio accounts for 10mol% of the total mass of raw materials. The above raw materials were mixed with water, prepared into a slurry with a solid content of 30vol%, ball milled for 24 hours, dried and ground. The above raw materials were placed in a gas pressure sintering furnace for carbothermal reduction reaction at a temperature of 1800° C., a nitrogen pressure of 3 MPa, and a reaction time of 1 h. Put the obtained product in a muffle furnace, keep it warm at 650°C for 5 hours to remove excess carbon, and obtain a high-purity β-silicon nitride ...

Embodiment 3

[0095] Example 3 Method for preparing β-silicon nitride with high sphericity, low uranium and thorium by improved granulation and sintering method

[0096] Using low uranium and thorium α-silicon nitride (uranium<5ppb, thorium<5ppb) powder as raw material, add 5wt% low uranium, thoriated yttrium oxide (uranium<5ppb, thorium<5ppb) and 3wt% low uranium, Thorium alumina (uranium<5ppb, thorium<5ppb) additives, 1wt% dispersant and 1wt% binder PVB were added to the total mass of the raw materials to form a slurry with a solid content of 50vol%, and ball milled for 12 hours to mix evenly. The ball-milled slurry is subjected to spray granulation to prepare spherical α-silicon nitride granulated powder. The various parameters of the spray granulation process used are: the hot air inlet temperature is 150°C, the exhaust air temperature is 70°C, and the rotational speed of the centrifugal disk of the atomizer is 4000rpm. The granulated powder was placed in a crucible, and sintered in a ...

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Abstract

The invention relates to ultrapure low radioactive spheroid beta silicon nitride powder. The sphericity degree is high; the purity is high; the uranium and thorium impurity content reaches 5ppb or below. The beta silicon nitride powder can be used as a filling material of an electronic encapsulating material, and is particularly applicable to a high-heat-conduction memory semiconductor encapsulating material.

Description

technical field [0001] The invention relates to an ultra-pure low-radioactive spherical β-silicon nitride powder, which can be used as a filling material for electronic packaging materials, especially for high thermal conductivity memory semiconductor packaging materials, and belongs to the field of electronic packaging. Background technique [0002] With the rapid progress of modern microelectronics technology, electronic products and their devices are gradually developing in the direction of miniaturization, high integration and high power. Continued to increase. The data pointed out that for most electronic devices, the operating temperature cannot be higher than 80°C; above this temperature, the reliability will be reduced by half for every 10°C increase in temperature; and chip failure caused by system overheating accounts for the majority of chip failure. More than 50% of the reasons, it can be seen that the chip heat dissipation problem is a bottleneck problem restri...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C01B21/068C08L63/00C08L83/04C08K9/06C08K7/18C09K5/14
CPCC08K7/18C08L63/00C08K9/06C09K5/14C01P2002/72C01P2004/03C01P2004/61C01B21/0682C08K2201/016C08K2201/005C08K3/34C08K9/02C08G77/04C08K3/28C08K7/26C08K2003/385C08L83/04
Inventor 成会明崔巍孙思源贾再辉邹艺峰
Owner QINGDAO CUP NEW MATERIALS CO LTD
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