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A method for regulating the electrochemical exfoliation of graphene

A kind of ene electrochemical and graphene technology, applied in the field of graphene, can solve the problems of slow electrochemical exfoliation of graphene, difficulty in meeting industrial needs, and low nucleation density, so as to facilitate repeated reuse, improve integrity and Cleanliness, damage reduction effect

Active Publication Date: 2022-04-05
INST OF METAL RESEARCH - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The current problem of this method is that the nucleation density of the bubbles at the interface between the graphene and the growth substrate is small during the electrolysis bubbling process, the nucleation speed is slow, and the diffusion speed is slow. need

Method used

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Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0023] Firstly, the graphene film is grown on the copper foil by CVD method: the copper foil is put into the reaction furnace of low-pressure CVD, and the reaction furnace is turned on. Introduce argon gas, remove the air in the reaction furnace until the pressure is less than 1Pa, then introduce hydrogen gas with a flow rate of 5sccm and argon gas with a flow rate of 50sccm, heat the reaction furnace, and raise the furnace temperature to 1000°C in 5 minutes. Rise to 1000°C, anneal for 30 minutes, then close the argon gas, feed in methane with a flow rate of 5 sccm and hydrogen with a flow rate of 15 sccm, maintain the pressure at 20 Pa, deposit graphene for 5 minutes, then close the methane, and in the atmosphere of argon and hydrogen to Cool down to room temperature at a rate of 1°C / s, and take out the graphene grown on the copper foil. Then polyethylene terephthalate (PET) was used as the target substrate, and hot melt adhesive (ethylene-vinyl acetate copolymer) was used as...

Embodiment 2

[0025] The difference from Implementation Example 1 is:

[0026] In this embodiment, the nucleation density and grain boundary density of graphene are increased by increasing the concentration of methane, and the nucleation speed of bubbles on the surface of graphene is increased, thereby increasing the speed of graphene electrochemical stripping. In the reaction stage, the flow of methane is 15 sccm, the flow of hydrogen is 5 sccm, the pressure is maintained at 20 Pa, and the electrochemical stripping speed of the prepared graphene is 20 cm / min.

Embodiment 3

[0028] The difference from Implementation Example 1 is:

[0029] In this embodiment, the nucleation density and grain boundary density of graphene are increased by increasing the gas pressure and the type of carrier gas, and the nucleation rate of bubbles on the surface of graphene is increased, thereby increasing the rate of graphene electrochemical stripping. In the reaction stage, the flow rate of methane is 10 sccm, the flow rate of hydrogen gas is 30 sccm, the flow rate of argon gas is 60 sccm, the pressure is maintained at 100 Pa, and the electrochemical stripping speed of graphene prepared is 25 cm / min.

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PUM

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Abstract

The invention relates to the field of graphene, in particular to a method for regulating the electrochemical stripping of graphene. The graphene layer is grown on the growth substrate by the CVD method, and the graphene is combined with the target substrate through the bonding layer to form a composite structure of the target substrate / bonding layer / graphene / growth substrate; this composite structure is used as the negative electrode, and the electrolytic bubbling is peeled off Graphene film, by adjusting the parameters of the growth process, increases the grain boundary density and wrinkle density of graphene, thereby increasing the number of nucleation sites and the diffusion rate of bubbles during the electrochemical exfoliation of graphene, so as to realize the reliability of the graphene electrochemical exfoliation method. control, and high-efficiency, large-area, and low-cost preparation of highly conductive graphene films. The invention solves a series of technical problems in industrial large-scale transfer of graphene films, and promotes its large-scale application in the fields of transparent conductive films and electronic devices.

Description

technical field [0001] The invention relates to the field of graphene, in particular to a method for regulating the electrochemical stripping of graphene. Background technique [0002] Graphene is a two-dimensional nanomaterial composed of sp2 bonded carbon atoms. Because of its unique bandgap structure and physical properties such as high electrical conductivity, high thermal conductivity, and high strength, it has attracted the attention of many scholars, and it has also made it popular in the world. It has broad application prospects in many fields such as electronics, optoelectronics, sensors, and solar cells. At present, the preparation methods of graphene are mainly micromechanical exfoliation method, chemical oxidation exfoliation method, epitaxial growth method and chemical vapor deposition (CVD) method. Among them, the CVD method is the mainstream method for preparing high-quality and large-area graphene. Different application fields need to transfer graphene to d...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01B32/194C01B32/186
Inventor 任文才董世超马来鹏成会明
Owner INST OF METAL RESEARCH - CHINESE ACAD OF SCI