Preparation method of CoPi/Ag/bismuth vanadate composite photoelectric anode material

A photoanode, bismuth vanadate technology, applied in electrodes, chemical instruments and methods, electrolysis processes, etc., can solve the problems of low catalytic efficiency, low solar energy conversion efficiency, limited solar energy utilization, etc.

Inactive Publication Date: 2019-06-11
NORTHWEST NORMAL UNIVERSITY
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  • Abstract
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Problems solved by technology

At present, the most prominent problems of photocatalytic technology are: (1) The utilization of solar energy is limited, and typical semiconductor photodependent agents can only absorb the ultraviolet part of sunlight; (2) The catalytic efficiency is low
In recent years, a large number of studies have addressed the BiVO 4 Problems of electron-hole pair recombination and low solar energy conversion efficiency

Method used

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  • Preparation method of CoPi/Ag/bismuth vanadate composite photoelectric anode material
  • Preparation method of CoPi/Ag/bismuth vanadate composite photoelectric anode material
  • Preparation method of CoPi/Ag/bismuth vanadate composite photoelectric anode material

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Embodiment Construction

[0032] Below by specific embodiment CoPi / Ag / BiVO of the present invention 4 The preparation and properties are further explained.

[0033] (1) BiVO 4 Preparation of photoanode

[0034] According to the method of electrodeposition combined with heat treatment by Kim and Choi's group, porous BiVO 4 The membrane was successfully prepared. Steps: First, BiOI nanosheets were prepared by electrodeposition using CHI 660D electrochemical workstation. FTO glass cleaned ultrasonically with acetone / isopropanol / distilled water (volume ratio = 1:1:1) was used as the working electrode, the Ag / AgCl (3.5 M KCl) electrode was used as the reference electrode, and the Pt electrode was used as the counter electrode. with 1MHNO 3 Adjust the pH of 50 mL0.4 M KI solution to 1.5~1.7, then add 0.970 g Bi(NO 3 ) 3 ·5H 2 O until dissolved and the solution color changed to orange-red. Then slowly add 20ml 0.498 g 1,4-benzoquinone ethanol solution dropwise and stir for several minutes, the soluti...

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Abstract

The invention provides a preparation method of a CoPi/Ag/bismuth vanadate composite photoelectric anode material. According to the method, CoPi/Ag is successfully loaded on the surface of BiVO4 by hydrothermal deposition to form a stable photoelectric anode composite thin film CoPi/Ag/BiVO4. The functions of plasma Ag nanoparticles and the Co-Pi cocatalyst are utilized to expand the visible lightabsorption range of bismuth vanadate, and thus the light can be effectively captured, the charge transfer resistance is reduced, and the rapid migration of the charge carrier is accelerated, thereby the recombination of electron-hole pairs is inhibited, and photoelectrocatalytic properties of the BiVO4 composite photoelectric anode is improved.

Description

technical field [0001] The present invention relates to a kind of BiVO4 base composite material, relate to a kind of CoPi / Ag / BiVO 4 The preparation method of photoanode material is mainly used as photoanode material for photoelectrochemical water splitting reaction. Background technique [0002] The energy shortage and environmental pollution brought about by the rapid economic development are two major problems faced by mankind at present, so it is particularly important to find clean and efficient new energy sources and control environmental pollution. Solar energy has the advantages of being inexhaustible, non-polluting, and renewable. Hydrogen energy has the advantages of high combustion value and non-polluting combustion products. Therefore, the use of solar energy to photolyze water to prepare hydrogen is one of the new energy sources in the future. People are paying more and more attention to it, and photocatalytic technology has become one of the current research ho...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B01J27/198C25B1/02C25B11/08
Inventor 张靓王其召黄静伟佘厚德王磊
Owner NORTHWEST NORMAL UNIVERSITY
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