Application of Indium Tin Oxide with (400) Crystal Plane Preference in Transparent Thin Film Thermocouples

Abstract

The invention relates to an application of indium tin oxide with (400) crystal plane preference on a transparent thin film thermocouple, and belongs to the technical field of thin film thermocouples.The body-centered cubic ferromanganese phase polycrystalline indium tin oxide with (400) crystal plane preference is made into one pole of the transparent thin film thermocouple by a direct current pulse magnetron sputtering method, and the duty ratio of the direct current pulse magnetron sputtering is 10-40%. According to the application of indium tin oxide with (400) crystal plane preference onthe transparent thin film thermocouple, the preferred orientation of the indium tin oxide film obtained by direct current pulse magnetron sputtering is controlled, so that the indium tin oxide transparent film thermocouple has the higher Zeebek coefficient.

Description

Technical field [0001] The present invention relates to an application having an indium tin oxide having a (400) crystal plane in the transparent film thermocouple, belonging to the technical field of film thermocouples. Background technique [0002] The film thermocouple has the advantages of low preparation cost, high sensitivity, short response time. At present, the film thermocouple is mainly composed of metal materials, such as: PT, Ni 90 CR 10 Ni 95 Si 5 Wait, the above metal film thermocouple is opaque in the visible range, and in certain special fields, the film thermocouple is required to be transparent in the visible range, such as: the lens surface of the space telescope, the glass surface of the spacecraft, Solar panels of solar panels, etc. Indium tin oxide film material is an important transparent conductive material that is important in the field of photoelectric conversion, such as: solar cell transparent electrode, flat panel display transparent electrode, photoe...

AI Technical Summary

Problems solved by technology

However, the ordinary indium tin oxide film has a non-preferential polycrystalline center cubic ferromanganite phase structure. When measuring temperature in air, due to the non-preferential polycrystalline center cubic ferromanganite phase indium tin oxide film will react with oxygen in the air reaction, resulting in an irreversible change in the electrical properties of the indium tin oxide film, which in turn leads to a lower Seebeck coefficient for the thin-film thermocouple, which eventually leads to a decrease in the temperature measurement accuracy of the thin-film thermocouple

[0003] At present, in order to overcome the problem of unstable Seebeck coefficient in the temperature measurement process of indium tin oxide transparent film thermocouples, it is necessary to prepare a dense anti-oxidation coating on the surface of indium tin oxide film transparent film thermocouples, such as: SiO 2 、Al 2 o 3 、SiN x , AlN x etc., but these methods all have some deficiencies, such as: the larger stress in the anti-oxidation coating will destroy the indium tin oxide film material; the larger stress in the anti-oxidation coating will lead to anti-oxidation The coating is broken and peeled off, which leads to the failure of anti-oxidation; in the process of preparing the anti-oxidation coating, it is necessary to discharge to the outside the environment containing Cl, F, CO x , NH x , NO x Exhaust gases such as harmful gases, causing environmental pollution; the prepared indium tin oxide transparent film thermocouple has problems such as high cost, long time consumption, and low efficiency

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