Electronic transmission film and preparation method and application thereof

A technology for electron transport and thin film, which is applied in the field of electron transport thin film and its preparation, can solve problems such as exciton quenching and electronic transport obstruction, achieve the effect of improving stability, improving luminous efficiency and device performance, and realizing mass production

Inactive Publication Date: 2019-07-09
TCL CORPORATION
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The object of the present invention is to provide a kind of electron transport thin film and preparation method thereof, aim at solving in the electron transport layer of existing zinc oxide

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  • Electronic transmission film and preparation method and application thereof
  • Electronic transmission film and preparation method and application thereof
  • Electronic transmission film and preparation method and application thereof

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preparation example Construction

[0039] Correspondingly, an embodiment of the present invention provides a method for preparing an electron transport thin film, comprising the following steps:

[0040] S01. Provide a mixed solution of zinc salt, metal salt containing doped metal ions, and alkali, and react to prepare zinc oxide nanoparticles containing doped metal ions;

[0041] S02. Depositing the solution containing metal-doped zinc oxide nanoparticles on the substrate, drying to form a film to obtain an electron transport film.

[0042] The preparation method of the electron transport thin film provided by the embodiment of the present invention only needs to react the mixed solution of the zinc salt, the metal salt containing doped metal ions, and the alkali to prepare zinc oxide nanoparticles containing doped metal ions, and then pass The solution method can be used for film formation. The method is very simple, low in cost, easy to operate, requires less equipment, has good repeatability, and can reali...

Embodiment 1

[0089] A kind of lanthanum ion-doped nano zinc oxide electron transport thin film, its preparation method comprises the following steps:

[0090] First, an appropriate amount of zinc acetate and lanthanum sulfate are added to 50ml of methanol solvent to form a mixed salt solution with a total concentration of 0.1mol / L, wherein La 3+ The doping molar concentration is 3%. At the same time, an appropriate amount of potassium hydroxide powder is dissolved in another part of 50ml of methanol solvent to form a concentration of 0.3mol / L lye. The mixed salt solution was then heated to 50 °C, and potassium hydroxide solution was added dropwise until the molar ratio of hydroxide ions to metal ions was 1.7:1. After the infusion of the potassium hydroxide solution was completed, the mixed solution was continuously stirred at 50° C. for 2 h to obtain a uniform transparent solution. Subsequently, a heptane solvent with a volume ratio of 3:1 was added to the homogeneous transparent solutio...

Embodiment 2

[0093] A kind of yttrium ion-doped nano-zinc oxide electron transport thin film, its preparation method comprises the following steps:

[0094] First, an appropriate amount of zinc nitrate and yttrium chloride are added to 50ml ethanol solvent to form a mixed salt solution with a total concentration of 0.1mol / L, wherein the doping molar concentration of Y3+ is 7%. At the same time, an appropriate amount of lithium hydroxide powder was dissolved in another 50ml ethanol solvent to form a 0.2mol / L lye. The mixed salt solution was then heated to 40 °C, and lithium hydroxide solution was added dropwise until the molar ratio of hydroxide ions to metal ions was 1.9:1. After the lithium hydroxide solution was dripped, the mixed solution was stirred at 30° C. for 1 h to obtain a uniform transparent solution. Subsequently, ethyl acetate solvent with a volume ratio of 4:1 was added to the homogeneous transparent solution, resulting in a large amount of white precipitates in the transpar...

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Abstract

The invention provides an electron transmission film, which consists of nano zinc oxide containing at least one doped metal ion, wherein the nano zinc oxide doped with the metal ion is nano zinc oxidewith the surface enriched with the metal ion. The electron transmission film provided by the invention can significantly improve the stability of zinc oxide nanoparticles, thereby avoiding the use ofsurface ligands in the zinc oxide nanoparticles, further avoiding the obstruction of the introduction of the surface ligands on the electron transmission in the zinc oxide material, and optimizing the conductivity of the nano zinc oxide electron transmission layer.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to an electron transport film and its preparation method and application. Background technique [0002] Recently, with the continuous development of display technology, quantum dot light-emitting diodes (QLEDs) with quantum dot materials as the light-emitting layer have shown great application prospects. Due to its high luminous efficiency, controllable luminous color, high color purity, good device stability, and flexible applications, QLED has attracted more and more attention in the fields of display technology and solid-state lighting. [0003] In recent years, the nano-zinc oxide electron transport layer prepared by depositing zinc oxide colloidal solution has become the main electron transport layer scheme used in quantum dot light-emitting diodes. It has a good energy level matching relationship with the cathode and the quantum dot light-emitting layer, which si...

Claims

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Application Information

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IPC IPC(8): H01L51/50H01L51/56B82Y30/00
CPCB82Y30/00H10K50/115H10K50/165H10K50/16H10K2102/00H10K71/00H10K50/00H10K50/171H10K50/80H10K50/10H10K2102/351
Inventor 吴龙佳
Owner TCL CORPORATION
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