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Polishing pad and manufacturing method thereof

A manufacturing method and polishing pad technology, applied in the field of polishing pads, can solve the problems of low porosity and difficulty in achieving high polishing rate, etc.

Active Publication Date: 2021-04-30
TEIJIN FRONTIER CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, since the polishing pad is densified and has a low porosity, it is difficult to sufficiently accumulate abrasive grains and achieve a high polishing rate.

Method used

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  • Polishing pad and manufacturing method thereof
  • Polishing pad and manufacturing method thereof
  • Polishing pad and manufacturing method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0097] Using nylon (Ny) 6 as the island component and polyethylene terephthalate copolymerized with isophthalic acid-5-sulfonate sodium as the sea component, spinning and stretching were performed to obtain sea: island = 30: 70. The sea-island type composite fiber with the number of islands=836 and single fiber fineness of 5.6 dtex was cut into a length of 44 mm.

[0098] 70 wt% of the sea-island composite fiber and polyethylene terephthalate (PET) with a single fiber diameter of 11.1 μm and a length of 44 mm / high-density polyethylene (PE) with a melting point of 130° C. (core / sheath weight ratio=50 / 50) 30 wt% of binder short fibers were mechanically entangled by needle punching, and then heat-treated (150° C., 1 minute) to obtain a sheet in which sea-island composite fibers were held by binder fibers.

[0099] Thereafter, in a sodium hydroxide solution with a concentration of 5 g / L, it was processed at 90° C. for 60 minutes (alkali weight reduction treatment), and the sea co...

Embodiment 2

[0102] Except having changed the porosity of the polishing pad of Example 1 into 58.9%, it carried out similarly to Example 1, and obtained the polishing pad. Table 1 shows the composition and polishing performance of the polishing pad.

Embodiment 3

[0104] Except having changed the porosity of the polishing pad of Example 1 into 46.5%, it carried out similarly to Example 1, and obtained the polishing pad. Table 1 shows the composition and polishing performance of the polishing pad.

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Abstract

The object of the present invention is to provide a polishing pad with a long life, a high polishing rate, and a high flatness of the workpiece and its manufacturing method. In the non-woven fabric of sea-island composite fibers and binder fibers, the above-mentioned sea component is removed, and a polymer elastic body is added.

Description

technical field [0001] The present invention relates to a polishing pad for polishing various devices such as semiconductor substrates, semiconductor devices, compound semiconductor substrates, and compound semiconductor devices, and a method for manufacturing the same. Background technique [0002] In recent years, with the high integration and multilayer wiring of integrated circuits, a high level of flatness is required for semiconductor wafers forming integrated circuits. Also, chemical mechanical polishing (CMP) is known as a polishing method for polishing the semiconductor wafer or the like. Chemical mechanical polishing is a method of polishing the surface of a workpiece with a polishing pad while adding a slurry of abrasive grains dropwise. In addition, when polishing a semiconductor wafer or the like, there is a problem that the polishing time becomes longer due to the difficulty in processing, and the processing cost increases. [0003] For such reasons, there is...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B24B37/24D04H1/4382D04H1/541D04H1/542H01L21/304
CPCB24B37/24H01L21/304D04H1/43838D04H1/5412D04H1/4383B24D18/0027B24D11/006D04H1/5418D04H1/485D04H1/587D04H1/64D04H1/544D04H1/43828D04H1/43835D04H1/5416H01L21/30625D04H1/46D04H1/542
Inventor 山内建树神山三枝
Owner TEIJIN FRONTIER CO LTD