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Quantum dot light-emitting diode and preparation method thereof

A quantum dot light-emitting and diode technology, applied in the field of diodes, can solve the problems of electrons not participating in radiation recombination, low device efficiency, charge imbalance, etc., and achieve the effects of improving electroluminescence efficiency, improving matching, and preventing leakage.

Inactive Publication Date: 2019-08-23
NANCHANG HANGKONG UNIVERSITY
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AI Technical Summary

Problems solved by technology

The injection rate of carriers in quantum dots directly affects the formation rate of excitons in quantum dots. If the film quality of each functional layer is good and the energy levels are well matched, it will help the injection of carriers and excitons in quantum dots. The formation of exciton increases the recombination of excitons to improve the efficiency of the device; charge imbalance and film unevenness are an important factor affecting the conversion efficiency of QLED devices, such as lower mobility, poor energy level matching and imperfect film The injection of holes will be limited, and the number of holes injected into the light-emitting layer per unit time is less than the number of electrons, resulting in charge imbalance, a large number of electrons cannot participate in radiative recombination, and the efficiency of the device is low.

Method used

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  • Quantum dot light-emitting diode and preparation method thereof
  • Quantum dot light-emitting diode and preparation method thereof
  • Quantum dot light-emitting diode and preparation method thereof

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preparation example Construction

[0033] The present invention provides a method for preparing a quantum dot light-emitting diode described in the above technical solution, comprising the following steps: sequentially preparing a hole injection layer, a hole transport layer, a quantum dot light-emitting layer, an electron transport layer and a cathode on the surface of the anode.

[0034] In the present invention, before the hole injection layer, the hole transport layer, the quantum dot luminescent layer, the electron transport layer and the cathode are sequentially prepared on the surface of the anode, the surface of the anode is preferably cleaned first. In the present invention, when the anode is ITO conductive glass, it is preferable to use deionized water plus detergent, deionized water, acetone and isopropanol to ultrasonically clean the ITO conductive glass for 15 minutes each, and then soak them in alcohol 30min, wipe it clean with lens cleaning paper, and finally put it in a UV ozone machine for 20min...

Embodiment 1

[0054] Preparation of NiO solution: 1mmol of Ni(NO 3 ) 2 ·6H 2 O was dissolved in 10 mL of 2-methoxyethanol, stirred at 50°C for 1 h, then 10 μL of acetylacetone was added, stirred at room temperature for 1 h, and aged for 24 h to obtain a NiO solution.

[0055] Cleaning of ITO conductive glass: In an ultrasonic wave, clean the ITO conductive glass with deionized water plus detergent, deionized water, acetone and isopropanol for 15 minutes each, then soak it in alcohol for 30 minutes, and clean it with lens cleaning paper Wipe it clean, and finally place it in an ultraviolet ozone machine to irradiate for 20 minutes. The wavelength of ultraviolet light in the ultraviolet ozone machine is 325nm, and the irradiation time is 60s.

[0056] Spin-coat NiO hole injection layer: fix the ITO conductive glass on the homogenizer, adjust the speed of the homogenizer to 4000rpm, set the time to 45s, spin-coat a 15nm NiO hole injection layer, and bake it at 150°C 30min, and irradiated in...

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Abstract

The invention belongs to the technical field of diodes, and provides a quantum dot light-emitting diode. The quantum dot light-emitting diode comprises an anode, a functional layer and a cathode whichare sequentially laminated. The functional layer comprises a hole injection layer, a hole transmission layer, a quantum dot light-emitting layer and an electron transmission layer which are sequentially laminated, wherein the hole injection layer is in contact with the anode. By means of the hole injection layer, the holes are injected into a hole transport layer from an anode, so that the matching degree of the hole transport layer and the anode material is improved; the holes and electrons are injected from two poles of a diode and reach the quantum dot light-emitting layer after charge transmission; and conduction bands and valence bands of the quantum dots capture the electrons and the holes respectively and emit light in a composite mode; the arrangement of the electron transmissionlayer facilitates the effective injection of electrons into quantum dots from a cathode, and the holes can be prevented from leaking to an adjacent layer, thereby improving the recombination efficiency of charges. Through the arrangement of the functional layer, the luminous efficiency, the brightness and the stability of the quantum dot light emitting diode are improved.

Description

technical field [0001] The invention relates to the technical field of diodes, in particular to a quantum dot light-emitting diode and a preparation method thereof. Background technique [0002] Compared with other light sources, quantum dot light-emitting diodes can provide people with a more comfortable and natural visual experience, and are more energy-efficient, so they have become a research hotspot in the global industry and academia in recent years. Based on its huge commercial prospects, since 2011, scientists from the United States, South Korea and Belgium have begun to jointly develop active matrix displays based on quantum dot light-emitting diodes. Actively promote the research of quantum dot electroluminescence. [0003] Quantum dot light-emitting diodes (QLEDs) based on quantum dot semiconductor materials have excellent performances such as high color purity, high resolution, wide color gamut, and adjustable luminescence in the full band. QLED has unique advan...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K50/115H10K50/16H10K50/15H10K71/00
Inventor 张芹阳敏白亚慧刘金诺黄纪霞张余宝黎芳芳秦元成
Owner NANCHANG HANGKONG UNIVERSITY
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