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Chemical pretreatment and dielectrophoresis synergistic silicon carbide plane polishing method and device

A technology of synergy and polishing device, applied in chemical instruments and methods, machine tools for surface polishing, after treatment, etc., can solve the problem of uneven distribution of shear force on the surface of workpieces, difficulty in machining accuracy, and energy attached to abrasive particles. Reduce and other problems to achieve the effect of prolonging residence time, good surface quality and high processing efficiency

Active Publication Date: 2019-08-30
ZHEJIANG UNIV OF TECH
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Problems solved by technology

The pressure distribution parallel to the flow direction of the abrasive particles is uneven, the energy attached to the abrasive particles is continuously reduced, and the shear force on the surface of the processed workpiece is unevenly distributed, resulting in uneven surface of the workpiece after processing, and the processing accuracy is difficult to meet the requirements.
(3) The test processing time is still long, the processing efficiency is low, and the energy consumption is too large, resulting in high processing cost

Method used

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  • Chemical pretreatment and dielectrophoresis synergistic silicon carbide plane polishing method and device
  • Chemical pretreatment and dielectrophoresis synergistic silicon carbide plane polishing method and device
  • Chemical pretreatment and dielectrophoresis synergistic silicon carbide plane polishing method and device

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Embodiment Construction

[0031] The present invention will be described in detail below according to the accompanying drawings and preferred embodiments, and the purpose and effect of the present invention will become clearer. The present invention will be further described in detail below in conjunction with the accompanying drawings and embodiments. It should be understood that the specific embodiments described here are only used to explain the present invention, not to limit the present invention.

[0032] A silicon carbide planar polishing method with chemical pretreatment and dielectrophoresis synergy, the method comprising the steps of:

[0033] S1: Put the silicon carbide workpiece in the pretreatment workpiece groove, seal it with negative compression material, and only expose the plane to be polished;

[0034] S2: Put the silicon carbide sheet treated in S1 into Fenton's reagent for pretreatment, so that a silicon dioxide corrosion layer is formed on the surface of the silicon carbide. The F...

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Abstract

The invention discloses a chemical pretreatment and dielectrophoresis synergistic silicon carbide plane polishing method and device, and solves the problem of uneven silicon carbide plane polishing. According to the method, firstly, a workpiece to be polished is pretreated by utilizing a Fenton reaction, a silicon dioxide corrosion layer is generated on the surface of the workpiece, the hardness of the surface of the workpiece is reduced, then the workpiece is placed in a static overflow cavity, and a non-uniform electric field is applied in a overflow cavity to polarize abrasive particles, sothat abrasive particles are not uniformly stressed and move and gather towards the surface of the workpiece, and the material removal rate is improved. An abrasive flow polishes a plane of the workpiece to be polished subjected to Fenton pretreatment under the action of a non-uniform electric field, so that the effect of high-efficiency uniform polishing is achieved. The workpiece polished by thepolishing method is uniform in surface, low in surface roughness, high in surface quality and high in processing efficiency.

Description

technical field [0001] The invention belongs to the field of ultra-precision machining, and in particular relates to a silicon carbide plane polishing method and device with synergistic effects of chemical pretreatment and dielectrophoresis. Background technique [0002] Silicon carbide is a representative of the third-generation semiconductor materials. It has a wide band gap, high critical breakdown field strength, high electron mobility, and high thermal conductivity, and has broad application prospects in production. At present, silicon carbide has been widely used in the fields of abrasives, metallurgy, LED solid-state lighting and high-frequency devices, especially in electronic applications such as high temperature and high pressure, and in extreme environments such as aerospace and military industries. [0003] High-purity single-crystal silicon carbide is an important material for the manufacture of semiconductors. The application of single crystal silicon carbide ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): B24B31/116B24B31/12C30B33/00C30B29/36
CPCB24B31/116B24B31/12C30B29/36C30B33/00
Inventor 赵军方海东彭浩然
Owner ZHEJIANG UNIV OF TECH
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