Oxygen vacancy modified metal oxide gas sensitive material for low-concentration NO2 gas detection at low temperature and preparation method thereof

A gas-sensing material, gas detection technology, applied in the preparation of oxide/hydroxide, oxygen/ozone/oxide/hydroxide, chemical instruments and methods, etc., can solve the complex reduction process, weak reduction ability, reduction The problem of high temperature can improve the response recovery time, high sensitivity and good dispersion.

Active Publication Date: 2019-09-10
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the current preparation methods of oxygen vacancies (such as hydrogen peroxide reduction treatment, hydrogen reduction treatment, inert atmosphere or vacuum treatment and reducing agent premixed calcination treatment, etc.) have high risk, weak reducing ability, high reductio

Method used

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  • Oxygen vacancy modified metal oxide gas sensitive material for low-concentration NO2 gas detection at low temperature and preparation method thereof
  • Oxygen vacancy modified metal oxide gas sensitive material for low-concentration NO2 gas detection at low temperature and preparation method thereof
  • Oxygen vacancy modified metal oxide gas sensitive material for low-concentration NO2 gas detection at low temperature and preparation method thereof

Examples

Experimental program
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Effect test

preparation example Construction

[0046] A low-concentration NO 2 A method for preparing a metal oxide porous nanosphere gas-sensing material modified by oxygen vacancies for gas detection, comprising the following steps:

[0047] (1) Dissolve the metal salt raw material in a mixed solvent of organic alcohol; move the obtained clear liquid into a high-pressure reactor, and keep it at 120-200°C for 1 hour, so that the raw material can undergo a compound reaction in a high-temperature and high-pressure environment to obtain a porous Metal oxide precursors.

[0048] (2) Centrifuge the product obtained in step (1), wash it with ethanol for 3-5 times, and dry it at 60-80°C; then calcinate it in a muffle furnace at 400-600°C for 60-120min to obtain a porous metal oxide Nanosphere gas-sensitive material.

[0049] (3) The metal oxide porous nanospheres are placed in a two-chamber tube furnace, the reducing agent is heated at a high temperature in a low pressure environment, and the metal oxide in the low temperature...

Embodiment 1

[0064] 1. Oxygen vacancy modified metal oxide porous nanosphere gas-sensing material and its preparation

[0065] A low-concentration NO 2 Oxygen vacancies modified metal oxide gas-sensing materials for gas detection, the metal oxide of which is In 2 o 3 Porous nanospheres; In 2 o 3 The porous nanospheres are placed in a two-chamber tube furnace, and the reducing agent is heated at a high temperature under a low pressure environment, and at the same time, the surface reduction treatment is performed on the metal oxide gas-sensitive material at different temperatures, and the reducing agent is metal Al powder. The metal oxide modified by oxygen vacancies is a porous nanosphere composed of small particles, the diameter of the ball is 200-700nm, and the particle size is 10-20nm.

[0066] Preparation steps:

[0067] (1) Add 0.3g of matrix material indium nitrate into a mixed solvent of organic solvent 30ml of isopropanol and 10ml of glycerin and stir until completely dissolve...

Embodiment 2

[0075] Example 2 Gas Sensitive Detection of Oxygen Vacancies Modified Metal Oxides Prepared at Different Reduction Temperatures

[0076] As described in Example 1, the difference is that the reduction temperature of the metal oxide porous nanospheres in step (1) is 250°C, 400°C. At 80℃, 3ppm NO 2 Gas sensitivity test results under gas conditions are as follows: Figure 7 As shown, it can be seen from the figure that with the increase of the surface reduction temperature, the gas-sensing properties of the metal oxide materials modified by oxygen vacancies have certain changes, but all of them are sensitive to 3ppm NO at 80°C. 2 Gas has a relatively good response. The range of its response is 8-86.

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Abstract

The invention relates to an oxygen vacancy modified metal oxide gas sensitive material for low-concentration NO2 gas detection at low temperature and a preparation method thereof. The material is obtained by subjecting a metal oxide to surface reduction with a reductant, is porous nanospheres consisting of small particles, and has a diameter of 200-700 nm, and the size of the small particles is 10-20 nm. The invention also provides a method for preparing an oxygen vacancy modified metal oxide gas sensitive material through safe and effective surface reduction of an oxide. The oxygen vacancy modified metal oxide gas sensitive material has high sensitivity and selectivity for low-concentration NO2 gas at low temperature. The method is simple, process parameters are easy to control, and the method is easy to operate and low in cost.

Description

technical field [0001] The invention belongs to the field of gas-sensitive material preparation, and in particular relates to a low-concentration NO 2 Metal-oxide-semiconductor gas-sensing materials for gas detection. Background technique [0002] The information disclosed in this background section is only intended to increase the understanding of the general background of the present invention, and is not necessarily taken as an acknowledgment or any form of suggestion that the information constitutes the prior art already known to those skilled in the art. [0003] With the development of science and technology and the continuous improvement of people's living standards, industrial waste gas and domestic waste gas (such as NO 2 , SO 2 、H 2 S, CO, etc.) emissions are also increasing day by day, and the environmental pollution problems (such as smog, acid rain, greenhouse effect, etc.) that people are facing are also becoming more and more serious. Therefore, effective ...

Claims

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Application Information

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IPC IPC(8): C01B13/14C01G15/00C01G9/02C01G19/02G01N27/04G01N27/12
CPCC01B13/145C01G9/02C01G15/00C01G19/02C01P2004/32C01P2004/45C01P2004/62C01P2004/64C01P2006/12G01N27/041G01N27/127
Inventor 刘久荣刘伟杜文静吴莉莉汪宙王凤龙
Owner SHANDONG UNIV
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