External temperature field device for assisting growth of two-dimensional black phosphorus crystals, and application thereof

Abstract

The present invention discloses an external temperature field device for assisting the growth of two-dimensional black phosphorus crystals (hereinafter referred to as "external temperature field device"). The device includes a power supply, a switching power supply, a relay, a temperature control module, a thermocouple, and a heating wire. The device can control the heating of the heating wire andperform temperature programming and cooling by setting parameters of the temperature control module, and an external temperature field generated by the device can well assist the growth of the blackphosphorus crystals. The invention also discloses a using method and an application of the device. Compared with conventional tubular furnace heating modes without the "external warm field device", the method of the invention has the advantages of compensation of the temperature loss in the furnace, improvement of the distribution uniformity of the temperature field in the furnace, control of thetemperature field distribution and temperature change in a specific region, and facilitation of accurate control of the volatilization and transportation process of reaction raw materials, the nucleation and growth process of black the phosphorus crystals and the generation process of byproducts.

Description

technical field [0001] The invention belongs to the technical field of two-dimensional materials, and in particular relates to a device and method for assisting the growth of two-dimensional black phosphorus crystals by an external temperature field. Background technique [0002] The rapid development of the semiconductor industry puts higher demands on existing materials. Graphene opens the door to the era of two-dimensional materials, and its ultra-high carrier mobility (15000cm 2 V -1 the s -1 ), and other superior physical and chemical properties make it considered to be the most likely material to replace silicon, but the characteristic of zero band gap greatly limits its development. [0003] Similar to graphene, black phosphorus is a single-element two-dimensional material with van der Waals force between layers, and flake crystals with different layers can be obtained by exfoliation. But it also has characteristics that graphene does not have, such as: adjustable...

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Problems solved by technology

[0005] In short, the current preparation methods of black phosphorus crystals basically rely on heating devices such as muffle furnaces and tube furnaces. The design defects of the furnace itself and insufficient thermal insulation performance often lead to temperature loss and uneven temperature field distribution in the actual reaction. A series of problems such as uniformity, and these problems will be more obvious in furnaces controlled by dual temperature zones or multi-temperature zones

This makes it more difficult to control the actual reaction temperature solely by the temperature control device of the furnace itself, and the regulation of the nucleation and growth process of black phosphorus crystals will become more complicated.

However, there are few reports on the method of assisting the preparation of high-quality black phosphorus crystals by applying an external temperature field.

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