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High-pressure preparation method of CuInS2 nano material with controllable morphology

A technology of nanomaterials and morphology, which is applied in the field of preparing thin film CuInS2 nanosheets, can solve the problems that nanosheets have not been reported, and achieve the effects of uniform distribution of components, simple process, and high phase purity

Active Publication Date: 2019-10-18
JILIN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Currently, CuInS prepared by wet chemical methods 2 The morphology of semiconductor nanocrystals mainly includes spherical particles, nanorods, and nanowires. Regarding the micron-scale two-dimensional CuInS 2 Nanosheets have not been reported

Method used

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  • High-pressure preparation method of CuInS2 nano material with controllable morphology
  • High-pressure preparation method of CuInS2 nano material with controllable morphology
  • High-pressure preparation method of CuInS2 nano material with controllable morphology

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1 2

[0027] Example 1 Two-dimensional film-like CuInS 2 Preparation of nanosheets

[0028] Preparation of two-dimensional film-like CuInS 2 The nanosheets are produced in a symmetrical diamond anvil. The symmetrical diamond is used to pressurize the anvil. The size of the diamond anvil is 0.4 mm, and a T301 stainless steel sheet is used as a gasket. The sample assembly process of the diamond pressure chamber is as follows: firstly, a pit (thickness is about 0.042 mm) is pre-pressed in the center of the gasket, and then a hole with a diameter of 0.13 mm is punched in the center of the pit as a cavity for loading the sample. Install the finished gasket on the lower anvil surface of the diamond counter-anvil according to the orientation during pre-compression, and the small hole of the gasket and the two opposite diamond surfaces form a sample chamber. Chalcopyrite CuInS synthesized by solvothermal method 2 Nanoparticles (particle size 4.3nm) together with a small piece of ruby ​​a...

Embodiment 2 2

[0030] Example 2 two-dimensional thin film CuInS 2 Crystal structure and morphology characterization of nanosheets

[0031] The samples were characterized by synchrotron radiation X-ray diffraction, transmission electron microscopy and high-resolution electron microscopy.

[0032] figure 1 is the starting material - chalcopyrite CuInS 2 TEM image of nanoparticles. figure 2 is CuInS 2 Size statistics map of the nanoparticles showing the starting material CuInS 2 The average size of the nanoparticles is 4.3 nm. image 3 is the starting material CuInS 2 High-resolution electron microscopy pictures of nanoparticles, the measured 0.317nm and 0.195nm correspond to the chalcopyrite type CuInS 2 The (112) and (220) plane lattice spacing. Figure 4 is the initial CuInS 2 Nanoparticle synchrotron radiation XRD data refinement shows that the initial sample has a chalcopyrite phase structure. Figure 5 It is the transmission electron microscope picture of the pressure-relieving p...

Embodiment 3 2

[0034] Example 3 two-dimensional thin film CuInS 2 Optical Properties of Nanosheets

[0035] Figure 15 is the starting material chalcopyrite phase CuInS 2 Absorption spectrum of nanoparticles showing chalcopyrite phase CuInS 2 The energy bandgap of the nanoparticles is 2.03eV. Figure 16 It is a pressure relief product, two-dimensional thin film CuInS 2 Absorption spectra of nanosheets showing 2D film-like CuInS 2 The energy bandgap of the nanosheets is 1.82eV. This indicates that the high-pressure synthesized two-dimensional film-like CuInS 2 Nanosheets can be used in solar cells.

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Abstract

The invention discloses a high-pressure preparation method of a CuInS2 nano material with controllable morphology, and belongs to the technical field of nano material preparation. The method comprisesthe following steps: taking chalcopyrite CuInS2 nano particles as a starting raw material, pressurizing the starting raw material to 15-30 GPa in a diamond anvil cell, and then relieving pressure ofthe diamond anvil cell to normal pressure to obtain CuInS2 nano materials with different morphologies. The method disclosed by the invention has the advantages of simple process, short synthesis time,synthesis at room temperature, greenness and environment friendliness, low cost, high product repeatability and the like, and the obtained product still keeps a phase structure of chalcopyrite and has high phase purity and good crystallinity. The product has a good optical absorption property, and absorption and conversion of sunlight are facilitated.

Description

technical field [0001] The invention belongs to the technical field of nanomaterial preparation, in particular to a method for preparing thin film CuInS 2 nanosheet method. Background technique [0002] As an important ternary chalcogenide semiconductor material, chalcopyrite CuInS 2 Has excellent properties, including: 1.45eV direct bandgap, more than 10 5 cm -1 optical absorption efficiency and high photoelectric conversion efficiency, which makes CuInS 2 The material has very good application prospects in various solar cells. [0003] CuInS 2 The optoelectronic properties of semiconductor nanocrystals mainly depend on the morphology, size and crystal structure. Currently, CuInS prepared by wet chemical methods 2 The morphology of semiconductor nanocrystals mainly includes spherical particles, nanorods, and nanowires. Regarding the micron-scale two-dimensional CuInS 2 Nanosheets have not been reported. It is well known that two-dimensional materials have an ultra-...

Claims

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Application Information

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IPC IPC(8): C01G15/00B82Y30/00B82Y40/00H01L31/032
CPCB82Y30/00B82Y40/00C01G15/006C01P2002/72C01P2004/04C01P2004/61H01L31/0322Y02E10/541
Inventor 杨新一刘豪邹勃邹广田
Owner JILIN UNIV
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