In-chip embedded diamond heat dissipation gallium nitride transistor based on etching and directional epitaxy and preparation method thereof

Abstract

The invention discloses an in-chip embedded diamond heat dissipation gallium nitride transistor based on etching and directional epitaxy and a preparation method. The transistor comprises an active region functional layer, a barrier layer, a buffer layer, a substrate and a heat dissipation region from top to bottom; the heat dissipation region is embedded in the substrate, is located below the active region functional layer, is adjacent to the heat source region, is formed through an ICP etching process and epitaxial directional growth of a diamond thick film, has the characteristics of smallregion stress and high heat transport capability, and can effectively realize the efficient heat dissipation capability of the transistor. The problem of heat accumulation of an active region of a high-power gallium nitride device is solved, and the maximum output power of the device is greatly improved.

Description

technical field [0001] The invention belongs to the technical field of heat management and development of power semiconductor devices, in particular to an etching and directional epitaxy-based embedded diamond heat-dissipating gallium nitride transistor and a preparation method. Background technique [0002] As a representative of a new generation of solid-state microwave power devices, GaN semiconductors have the characteristics of high two-dimensional electron gas concentration, high breakdown field strength, and high electron saturation velocity. Significant performance advantages. However, with the development of small-scale integration of devices, the reliability of GaN devices in high-power conditions is facing severe challenges in the development and application of GaN-based power devices at this stage, resulting in the fact that their high-power performance advantages are far from being fully utilized. One of the main reasons is that the GaN microwave power chip has...

AI Technical Summary

Problems solved by technology

However, with the development of small-scale integration of devices, the reliability of GaN devices in high-power conditions is facing severe challenges in the development and application of GaN-based power devices at this stage, resulting in the fact that their high-power performance advantages are far from being fully utilized.

One of the main reasons is that the GaN microwave power chip has a self-heating effect when it is working, and it increases with the increase of power, which increases the heat accumulation effect in the active area of ​​the chip while outputting high power, making the performance and reliability of the device sex decline

[0003] The existing solution is to remove SiC or other substrates so that the GaN layer can be effectively epitaxially or heterogeneously bonded to a diamond substrate with high thermal conductivity. However, this method has poor thermal conductivity between the GaN buffer layer and the diamond substrate. Adhesion layer, whose uniformity is difficult to control and can cause wafer bowing and epitaxial layer cracking due to differences in thermal expansion coefficient between GaN material and substrate

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