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Ultra-thick type polyimide film and preparation method thereof, and graphite sheet

A polyimide film, ultra-thick technology, applied in the field of polyimide, can solve the problems of reducing resin leveling, affecting quality stability, high apparent resin viscosity, etc., reducing the requirements for catalytic activity, Improve the regularity of molecular structure and avoid the effect of high surface viscosity

Active Publication Date: 2019-11-08
株洲时代华鑫新材料技术有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] However, the increase in thickness will bring a series of problems to the production of PI film. First, at the end of the polymerization process of the traditional PI film precursor resin, the amine groups and acid anhydrides at both ends of the molecular chain will still react slowly, resulting in difficult control of the reaction end point. The molecular weight of the resin fluctuates during storage and transportation, which affects the quality stability. In order to reduce the molecular weight change, the resin is generally stored at an ultra-low temperature of about -20°C after the polymerization reaction, but too low a temperature will cause the apparent viscosity of the resin to be too large. The leveling of the resin during coating is reduced, resulting in uneven thickness of the cast film and increased defects; secondly, the ultra-low temperature resin has strict requirements on catalyst activity and dosage, and it is difficult to be used to prepare ultra-thick PI films; finally, exceeding The degree of expansion of PI film with a thickness of 90 μm is difficult to control during the high-temperature graphitization process, especially in the Z-axis direction. It is easy to cause excessive foaming, which cannot be calendered to obtain high-density products, and significantly reduces thermal conductivity. At the same time, excessive expansion will also cause graphite flakes. Many appearance defects such as layering, falling powder, cracking, etc., affect the surface quality and process application of the final product
[0005] Patent CN201610825198.6 discloses a method of preparing water-based carbon black modified polyimide film through thermal imidization; Device; patent CN102093715A discloses a carbon nanotube-reinforced PI film and fiber thermal imidization preparation method, the carbon nanotube length of 10-10000 microns used is too long, will produce a lot of winding, affect the comprehensive performance of the film
The above patents all use the thermal imidization method to prepare PI films, which cannot obtain films with uniform structure and high in-plane orientation, and are not suitable for the preparation of thermally conductive graphite sheets, especially thick graphite sheets.
[0006] Patents CN201510409013.9 and CN201610726723.9 use the blending method to disperse inorganic particles such as oxides and inorganic acid salts in the resin, prepare polyimide films through chemical imidization, and finally obtain graphite sheets by high-temperature treatment. This method produces The PI film cannot control the excessive expansion of the normal direction during the graphitization process, so the film thickness generally does not exceed 90 μm, and it is impossible to obtain a thick graphite sheet with excellent performance.

Method used

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  • Ultra-thick type polyimide film and preparation method thereof, and graphite sheet
  • Ultra-thick type polyimide film and preparation method thereof, and graphite sheet
  • Ultra-thick type polyimide film and preparation method thereof, and graphite sheet

Examples

Experimental program
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Effect test

Embodiment 1

[0059] A preparation method of graphite sheet of the present invention, comprising:

[0060] (1) Resin preparation: 0.88 kg of carboxylated modified CNTs with a diameter of 100 nm and a length of 0.6 μm and 0.19 kg of Ca 2 P 2 o 7 Dissolve in 486.05kg of DMF, stir evenly, add 21.6kg of 1,4-PDA and 15.6kg of BAPP, after the diamine is dissolved, add 43.6kg of PMDA and 11.78kg of 4,4-ODPA in batches, Finally, 5.2 kg of 4-PEPA was added for capping, and when the viscosity of the resin reached 1920 poise, it was defoamed and stored at 4°C for use (solid content was about 17%);

[0061] (2) Preparation of PI film: Mix the resin prepared in step (1) with 163.44kg propionic anhydride and 1.75kg pyridine evenly, then flow through a gradient temperature rise of 120-190°C to form a film, and then imidize at a high temperature of 225-440°C, and finally 310 ℃ annealing and heat setting treatment to prepare a polyimide film with a thickness of 90 μm;

[0062] (3) Graphite sheet prepara...

Embodiment 2

[0064] A preparation method of graphite sheet of the present invention, comprising:

[0065] (1) Resin preparation: first, 0.25 kg of amination-modified CNTs with a diameter of 15 nm and a length of 15 μm and 0.52 kg of SiO with a particle size of 4 μm 2 Dissolve in 313.2kg of NMP, stir well and add 43.2kg of 4,4'-ODA, after the diamine is dissolved, add 54.4kg of PMDA in batches, then add 6.8kg of 3,4'-ODA to continue the reaction , and finally add 2.92kg of EPA for capping, when the viscosity of the resin reaches 1820 poise, defoam and store at 12°C for later use;

[0066] (2) Preparation of PI film: Mix the resin prepared in step (1) with 116.52kg of acetic anhydride and 4kg of pyridine evenly, then flow through a gradient temperature rise of 105-185°C to form a film, imidize at a high temperature of 230-435°C, and finally 340°C Annealing and heat setting to prepare a polyimide film with a thickness of 125 μm;

[0067] (3) Graphite sheet preparation: the polyimide film is...

Embodiment 3

[0069] A preparation method of graphite sheet of the present invention, comprising:

[0070] (1) Resin preparation: 0.23 kg of carboxylated modified CNTs with a diameter of 150 nm and a length of 2 μm and 0.94 kg of CaHPO with a particle size of 4.2 μm 4 Dissolve in 369.3kg of DMAc, stir well, add 36.2kg of 4,4'-ODA, 5.8kg of PDA, after the diamine is dissolved, add 57.11kg of PMDA in batches, and then add 11.2kg of BAPP to adjust the viscosity , and finally add 0.96kg of 4PEPA to end capping, when the viscosity of the resin reaches 1950 poise, defoam and store at 2°C for later use;

[0071] (2) Preparation of PI film: Mix the resin prepared in step (1) with 57.55kg of benzoic anhydride and 2.55kg of imidazole evenly, and then saliva film-forming by gradient heating at 110-175°C, high-temperature imidization at 235-415°C, and finally Annealing heat setting at 300°C to prepare a polyimide film with a thickness of 150 μm;

[0072] (3) Preparation of graphite sheet: Put the PI ...

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Abstract

The invention discloses an ultra-thick type polyimide film and a preparation method thereof. The preparation method comprises the following steps: dissolving surface-modified carbon nanotubes and inorganic filling materials in an organic solvent, and stirring uniformly; then adding a diamine monomer, adding a dianhydride monomer in batches after the diamine monomer is dissolved, and finally addinga cross-linking type end capping agent, and performing defoaming to obtain polyamide acid resin; and then adding a dehydrating agent and a catalyst for uniformly mixing to obtain precursor resin, andforming by salivation, high-temperature imidization, cross-linking, and annealing and heat setting. The ultra-thick type polyimide film is subjected to carbonization, graphitization and calendering treatment to obtain a graphite sheet with the single-layer thickness of 45-130 [mu]m, and the technical problem that an ultra-thick PI film in a current industry generates excessive expansion during ahigh-temperature graphitization process, and a single-layer thickness type graphite sheet cannot be obtained is solved.

Description

technical field [0001] The invention belongs to the technical field of polyimide, and in particular relates to an ultra-thick polyimide film, a preparation method thereof and a graphite sheet. Background technique [0002] With the rapid development of microelectronics technology, especially the upgrading of communication technology from "4G" to "5G", the introduction of high frequency, the continuous improvement of hardware integration, the continuous miniaturization of chips, and the doubling of the number of networked devices and antennas have resulted in equipment With the continuous increase of power consumption and heat generation, the heat dissipation of components has become a bottleneck problem faced by communication terminal equipment in the "5G" era. [0003] After the high-performance PI film is carbonized and graphitized at high temperature, a thermally conductive graphite sheet with a thermal conductivity several times that of copper can be obtained, which is t...

Claims

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Application Information

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IPC IPC(8): C08L79/08C08K9/04C08K7/24C08K3/04C08J5/18C01B32/205
CPCC08J5/18C08J2379/08C08K9/04C08K2201/011C08K3/041C01B32/205
Inventor 张步峰廖波杨军钱心远凌建强
Owner 株洲时代华鑫新材料技术有限公司
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