Ultra-thick type polyimide film and preparation method thereof, and graphite sheet

Abstract

The invention discloses an ultra-thick type polyimide film and a preparation method thereof. The preparation method comprises the following steps: dissolving surface-modified carbon nanotubes and inorganic filling materials in an organic solvent, and stirring uniformly; then adding a diamine monomer, adding a dianhydride monomer in batches after the diamine monomer is dissolved, and finally addinga cross-linking type end capping agent, and performing defoaming to obtain polyamide acid resin; and then adding a dehydrating agent and a catalyst for uniformly mixing to obtain precursor resin, andforming by salivation, high-temperature imidization, cross-linking, and annealing and heat setting. The ultra-thick type polyimide film is subjected to carbonization, graphitization and calendering treatment to obtain a graphite sheet with the single-layer thickness of 45-130 [mu]m, and the technical problem that an ultra-thick PI film in a current industry generates excessive expansion during ahigh-temperature graphitization process, and a single-layer thickness type graphite sheet cannot be obtained is solved.

Description

technical field [0001] The invention belongs to the technical field of polyimide, and in particular relates to an ultra-thick polyimide film, a preparation method thereof and a graphite sheet. Background technique [0002] With the rapid development of microelectronics technology, especially the upgrading of communication technology from "4G" to "5G", the introduction of high frequency, the continuous improvement of hardware integration, the continuous miniaturization of chips, and the doubling of the number of networked devices and antennas have resulted in equipment With the continuous increase of power consumption and heat generation, the heat dissipation of components has become a bottleneck problem faced by communication terminal equipment in the "5G" era. [0003] After the high-performance PI film is carbonized and graphitized at high temperature, a thermally conductive graphite sheet with a thermal conductivity several times that of copper can be obtained, which is t...

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Problems solved by technology

[0004] However, the increase in thickness will bring a series of problems to the production of PI film. First, at the end of the polymerization process of the traditional PI film precursor resin, the amine groups and acid anhydrides at both ends of the molecular chain will still react slowly, resulting in difficult control of the reaction end point. The molecular weight of the resin fluctuates during storage and transportation, which affects the quality stability. In order to reduce the molecular weight change, the resin is generally stored at an ultra-low temperature of about -20°C after the polymerization reaction, but too low a temperature will cause the apparent viscosity of the resin to be too large. The leveling of the resin during coating is reduced, resulting in uneven thickness of the cast film and increased defects; secondly, the ultra-low temperature resin has strict requirements on catalyst activity and dosage, and it is difficult to be used to prepare ultra-thick PI films; finally, exceeding The degree of expansion of PI film with a thickness of 90 μm is difficult to control during the high-temperature graphitization process, especially in the Z-axis direction. It is easy to cause excessive foaming, which cannot be calendered to obtain high-density products, and significantly reduces thermal conductivity. At the same time, excessive expansion will also cause

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