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Two-dimensional indium trisulfide coupled tellurium quantum dot composite material, and preparation method and application thereof

A technology of diindium trisulfide and composite materials, applied in the field of optical detection, to achieve the effects of good coupling, high crystallinity, and high optical detection performance

Inactive Publication Date: 2019-12-03
GUANGDONG UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there is no successful coupling of two-dimensional indium trisulfide to tellurium quantum dots at home and abroad. The process of this invention is simple and fast, and the coupling of zero-dimensional-two-dimensional structures can produce charge transfer and excellent photodetection performance.

Method used

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  • Two-dimensional indium trisulfide coupled tellurium quantum dot composite material, and preparation method and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0029] 1. Weigh 10 mg of indium trisulfide powder with an electronic balance, place the quartz boat of indium trisulfide in the middle of the tube furnace; feed argon gas and control the gas flow rate to 600 sccm, and feed a large amount of argon into the quartz tube of the tube furnace Air for 10 minutes.

[0030] 2. Turn on the tube furnace, raise it from room temperature to 980°C within 30 minutes, reduce the airflow to 20 sccm at about 500°C, keep it at 980°C for 10 minutes, take out the sample after natural cooling, and prepare it on a mica sheet Two-dimensional indium trisulfide single crystal.

[0031] 3. Place the mica sheet with two-dimensional indium trisulfide single crystal on the homogenizer, adjust the spin-coating conditions as rotation speed: 2000r / s, spin-coating time: 60s, and the two-dimensional indium trisulfide on the mica sheet Two-dimensional indium trisulfide-coupled tellurium quantum dots were fabricated by spin-coating on single crystals.

[0032] ...

Embodiment 2

[0034] 1. Weigh 20 mg of indium trisulfide powder with an electronic balance, place the quartz boat of indium trisulfide in the middle of the tube furnace; feed argon gas and control the gas flow rate to 600 sccm, and feed a large amount of argon into the quartz tube of the tube furnace Air for 10 minutes.

[0035] 2. Turn on the tube furnace, raise it from room temperature to 980°C within 30 minutes, reduce the airflow to 20 sccm at about 500°C, keep it at 980°C for 10 minutes, take out the sample after natural cooling, and prepare it on a mica sheet Two-dimensional indium trisulfide single crystal.

[0036] 3. Place the mica sheet on the homogenizer, adjust the spin-coating conditions as rotation speed: 3000r / s, spin-coating time: 60s; spin-coat on the two-dimensional indium trisulfide single crystal on the mica sheet to obtain two-dimensional indium trisulfide Diindium coupled tellurium quantum dots.

Embodiment 3

[0038] 1. Weigh 30 mg of indium trisulfide powder with an electronic balance, place the quartz boat of indium trisulfide in the middle of the tube furnace; feed argon gas and control the gas flow rate to 600 sccm, and feed a large amount of argon into the quartz tube of the tube furnace Air for 10 minutes.

[0039] 2. Turn on the tube furnace, raise it from room temperature to 980°C within 30 minutes, reduce the airflow to 20 sccm at about 500°C, keep it at 980°C for 10 minutes, take out the sample after natural cooling, and prepare it on a mica sheet Two-dimensional indium trisulfide single crystal.

[0040] 3. Place the mica sheet on the homogenizer, adjust the spin-coating conditions as rotation speed: 3000r / s, spin-coating time: 30s, and spin-coat on the two-dimensional indium trisulfide single crystal on the mica sheet to obtain two-dimensional indium trisulfide Diindium coupled tellurium quantum dots.

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Abstract

The invention belongs to the field of optical detection, and discloses a two-dimensional indium trisulfide coupled tellurium quantum dot composite material, and a preparation method and application thereof. The preparation method for coupling tellurium quantum dots to two-dimensional indium trisulfide comprises the following steps: flatly placing a mica sheet on indium trisulfide powder, and thenplacing the mica sheet and the indium trisulfide powder in the middle of a tubular furnace; in an argon atmosphere, raising the temperature to 900-980 DEG C and keeping the temperature, and carrying out natural cooling to obtain a two-dimensional indium trisulfide monocrystal on the mica sheet; and placing the mica sheet with the two-dimensional indium trisulfide monocrystal on a spin coater, andspin-coating tellurium quantum dots on the mica sheet. The growth conditions are easy to control, and the coupling method is simple and convenient. The two-dimensional indium trisulfide coupled tellurium quantum dot composite material has a zero-dimensional-two-dimensional structure. The zero-dimensional-two-dimensional stable material structure is beneficial to a growth-promoting synergistic effect, and has excellent optical detection performance.

Description

technical field [0001] The invention belongs to the technical field of light detection, and more specifically relates to a two-dimensional diindium trisulfide coupled tellurium quantum dot composite material and its preparation method and application. Background technique [0002] Physical vapor deposition method: using physical methods, the material source—solid or liquid surface is vaporized into gaseous atoms, molecules or parts are ionized into ions, and a film with a special function is deposited on the surface of the substrate. Chemical vapor deposition (CVD): refers to the method of chemical gas or vapor reacting on the surface of the substrate to synthesize coatings or nanomaterials. It is the most widely used technology in the semiconductor industry to deposit a variety of materials, including a wide range of insulating materials. Most metal materials and metal alloy materials. In theory, it is very simple: two or more gaseous raw materials are introduced into a re...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00C30B29/46B05D1/00B05D7/24
CPCB05D1/005B05D7/24C30B23/00C30B29/46
Inventor 陆健婷郑照强
Owner GUANGDONG UNIV OF TECH