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Cesium iodide single crystal wafer growth method based on solution

A growth method and cesium iodide technology, applied in the field of crystal material manufacturing, can solve the problems of cesium iodide single crystal light transmittance, unsatisfactory light output efficiency, complicated preparation method, difficult mass production, etc., to achieve excellent light output efficiency, light transmittance The effect of excellent precision and controllable size

Active Publication Date: 2019-12-13
SHANGHAI UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the existing CsI(Tl) crystal preparation method is complex, difficult to control, difficult to mass-produce, and cannot meet the needs of various application fields in the future. The light transmittance and light extraction efficiency of the prepared cesium iodide single crystal are not ideal. Technical issues resolved

Method used

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  • Cesium iodide single crystal wafer growth method based on solution
  • Cesium iodide single crystal wafer growth method based on solution
  • Cesium iodide single crystal wafer growth method based on solution

Examples

Experimental program
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Effect test

Embodiment 1

[0027] In this example, participating in Figure 1 ~ Figure 3 , a method for growing a solution-based cesium iodide single crystal sheet, comprising the following steps:

[0028] a. With dimethyl sulfoxide as solvent, 20ml of dimethyl sulfoxide is added into a flat-bottomed flask, then 10.4g of cesium iodide crystal powder with a purity of 99.9% is added, and the flat-bottomed flask is stirred on a magnetic stirrer, Control the rotation speed to 500r / min, and stir for 12 hours to completely dissolve the cesium iodide crystal powder in dimethyl sulfoxide until saturated and until the solution is clear and transparent; after the cesium iodide crystal powder is fully dissolved, use a The filter tip of micron is filtered, obtains the cesium iodide solution of the long crystal of saturation, standby;

[0029] b. the saturated crystal-growing cesium iodide solution prepared in the step a is taken out in two parts, and 0.6ml is taken out into a radius of 2cm brown vial A and 9ml int...

Embodiment 2

[0035] This embodiment is basically the same as Embodiment 1, especially in that:

[0036] In this embodiment, a method for growing a cesium iodide single crystal sheet based on a solution comprises the following steps:

[0037] a. With dimethyl sulfoxide as solvent, 60ml of dimethyl sulfoxide is added into a flat-bottomed flask, then 31.2g of cesium iodide crystal powder with a purity of 99.9% is added, and the flat-bottomed flask is placed on a magnetic stirrer to stir, Control the rotation speed to 700r / min, and stir for 4 hours to completely dissolve the cesium iodide crystal powder in dimethyl sulfoxide until saturated and until the solution is clear and transparent; after the cesium iodide crystal powder is fully dissolved, use a The filter tip of micron is filtered, obtains the cesium iodide solution of the long crystal of saturation, standby;

[0038] b. the saturated crystal-growing cesium iodide solution prepared in the step a is taken out in two parts, and 0.7ml is...

Embodiment 3

[0043] This embodiment is basically the same as the previous embodiment, and the special features are:

[0044] In this embodiment, a method for growing a cesium iodide single crystal sheet based on a solution comprises the following steps:

[0045] a. With dimethyl sulfoxide as solvent, 20ml of dimethyl sulfoxide is added into a flat-bottomed flask, then 10.4g of cesium iodide crystal powder with a purity of 99.9% is added, and the flat-bottomed flask is stirred on a magnetic stirrer, Control the rotation speed to 300r / min, and stir for 4 hours to completely dissolve the cesium iodide crystal powder in dimethyl sulfoxide until saturated and until the solution is clear and transparent; after the cesium iodide crystal powder is fully dissolved, use a The filter tip of micron is filtered, obtains the cesium iodide solution of the long crystal of saturation, standby;

[0046] b. the saturated crystal-growing cesium iodide solution prepared in the step a is taken out in two parts...

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Abstract

The invention discloses a cesium iodide single crystal wafer growth method based on a solution. Cesium iodide is placed into dimethyl sulfoxide (DMSO), and the solubility tends to decrease as the temperature rises; seed crystal can be obtained through heating of cesium iodide solutions; and then, the seed crystal is placed and grows in a special glass device so that a high quality cesium iodide single crystal wafer is obtained. The growth method is easy to operate, and the cost of used raw materials is low; and the high quality cesium iodide single crystal wafer can be precipitated from the cesium iodide solutions. According to the growth method, through combination of a solution precipitation method and a mould constraint control method, the cesium iodide single crystal wafer with a controllable size, and high transmittance and light extraction efficiency can be prepared. The cesium iodide single crystal wafer prepared with the growth method is high in quality and transmittance, and unique in photoluminescent properties, and the single crystal wafer prepared with the growth method and silicon based photodiodes can be cooperatively used for making excellent flat plate X-ray detectors.

Description

technical field [0001] The present invention relates to a method for preparing an inorganic halide single crystal material, in particular to a method for preparing a cesium iodide single crystal material, and also relates to a method for controlling the size of a cesium iodide single crystal material, and applies to the field of crystal material manufacturing technology. Background technique [0002] Inorganic halides, including CsI(Tl), are widely used as scintillation media in energetic particle and ionizing radiation detectors. For the first time, vacuum-deposited CsI(Tl) films were used for x-ray imaging inside photoelectric converters. Over the past decade, digital X-ray imaging systems have been developed using vacuum-deposited CsI(Tl) layers coupled in CCD or amorphous silicon detector arrays. CsI(Tl) scintillator thin films are widely used in advanced digital X-ray imaging because of their high scintillation efficiency for X-ray radiation, high spatial resolution an...

Claims

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Application Information

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IPC IPC(8): C30B29/12C30B29/64C30B7/00
CPCC30B29/12C30B29/64C30B7/00
Inventor 徐闰朱荣云刘风采倪超伟张笑铮蔡江孟华王文贞徐飞洪峰
Owner SHANGHAI UNIV
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