Epitaxial growth method of BaSi2 film

An epitaxial growth and thin film technology, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of high cost and low rate in molecular beam epitaxy growth, and achieve high quality, low cost and good epitaxial characteristics. Effect

Active Publication Date: 2019-12-31
SHANGHAI NORMAL UNIVERSITY
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Problems solved by technology

[0008] The purpose of the present invention is to overcome the deficiency and deficiency that existing technology exists, propose a kind of BaSi 2 The growth method of the thin film is based on the independent Si target and the Ba target as the source, and the BaSi 2 Epitaxial growth of thin films, solving the problems of low rate and high cost in molecular beam epitaxy growth

Method used

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  • Epitaxial growth method of BaSi2 film
  • Epitaxial growth method of BaSi2 film
  • Epitaxial growth method of BaSi2 film

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Embodiment 1

[0033] In step I, the substrate was ultrasonically cleaned in acetone, ethanol, and deionized water for 5 min each. Then put it in the acid solution of 80°C hydrochloric acid: hydrogen peroxide: water = 1:1:5 and the alkali solution of 80°C ammonia: hydrogen peroxide: water = 1:1:5 to wash for 5 minutes, and finally remove it in 5% dilute HF. The oxide layer was rinsed with deionized water and dried with high-purity nitrogen for later use.

[0034] The substrate cleaned in step II is introduced into the magnetron sputtering vacuum chamber, and the vacuum is drawn to 5×10 -5 Below Pa, raise the substrate temperature to 850°C and maintain it for 30min, then lower the substrate temperature to 500°C.

[0035] Step III sputters a Ba layer on a substrate at 500°C, the sputtering pressure is 0.3Pa, the sputtering rate is 2.5nm / min, and the sputtering time is 2min. During this process, Ba reacts with the heated Si substrate to form BaSi 2 Seed layer, detected by Raman spectroscopy,...

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Abstract

The invention relates to an epitaxial growth method of a BaSi2 film, especially relates to a method for epitaxially growing the BaSi2 film on a single crystal Si substrate by using a magnetron co-sputtering technology, and relates to the BaSi2 film manufacturing method technology field. In the epitaxial growth method of the BaSi2 film, a crystal orientation of a monocrystalline silicon substrate is (111) or (100), and resistivity is 0.01-10000 ohm.cm. The method comprises the following steps of I, cleaning the monocrystalline silicon substrate; II, annealing the monocrystalline silicon substrate; III, growing a BaSi2 seed layer; and IV, carrying out Ba and Si co-sputtering growth to obtain a BaSi2 epitaxial film. Compared with the prior art, the epitaxial growth method of the BaSi2 film ofthe invention has advantages that a stoichiometric ratio of the film can be accurately controlled; quality of the film is improved; an epitaxial characteristic is good; and a growth rate is faster, cost is lower and so on than those of a molecular beam epitaxy technology.

Description

Technical field: [0001] The present invention relates to BaSi 2 The technical field of thin film manufacturing methods, specifically refers to a method of epitaxially growing BaSi on a single crystal Si substrate using magnetron co-sputtering technology. 2 thin film method Background technique: [0002] With the increasingly severe energy and environmental problems, clean and efficient renewable energy has attracted more and more attention. As a new energy source, solar cells have always been a research hotspot. At present, solar cells dominated by crystalline silicon (monocrystalline silicon and polycrystalline silicon) occupy most of the market share, mainly due to the mature silicon purification process and crystalline silicon solar cell production process. In recent years, thin-film solar cells such as cadmium telluride (CdTe) and copper indium gallium selenide (CIGS) solar cells have also joined the ranks of competition, and their advantages lie in their low manufact...

Claims

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Application Information

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IPC IPC(8): H01L21/363H01L31/032H01L31/20C30B23/02C30B29/10
CPCH01L21/02381H01L21/02521H01L21/02631H01L21/02439H01L31/20H01L31/032C30B29/10C30B23/02Y02P70/50
Inventor 杜伟杰杜锐沈岑张毅闻石旺舟
Owner SHANGHAI NORMAL UNIVERSITY
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