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a basi 2 Epitaxial growth method of thin film

An epitaxial growth and thin film technology, applied in the directions of crystal growth, single crystal growth, single crystal growth, etc., can solve the problems of high cost and low speed in molecular beam epitaxy growth, and achieve high quality, low cost and good epitaxial characteristics. Effect

Active Publication Date: 2022-03-25
SHANGHAI NORMAL UNIVERSITY
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Problems solved by technology

[0008] The purpose of the present invention is to overcome the deficiency and deficiency that existing technology exists, propose a kind of BaSi 2 The growth method of the thin film is based on the independent Si target and the Ba target as the source, and the BaSi 2 Epitaxial growth of thin films, solving the problems of low rate and high cost in molecular beam epitaxy growth

Method used

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  • a basi <sub>2</sub> Epitaxial growth method of thin film
  • a basi <sub>2</sub> Epitaxial growth method of thin film
  • a basi <sub>2</sub> Epitaxial growth method of thin film

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Embodiment 1

[0033] In step I, the substrate was ultrasonically cleaned in acetone, ethanol, and deionized water for 5 min each. Then put it in the acid solution of 80°C hydrochloric acid: hydrogen peroxide: water = 1:1:5 and the alkali solution of 80°C ammonia: hydrogen peroxide: water = 1:1:5 to wash for 5 minutes, and finally remove it in 5% dilute HF. The oxide layer was rinsed with deionized water and dried with high-purity nitrogen for later use.

[0034] The substrate cleaned in step II is introduced into the magnetron sputtering vacuum chamber, and the vacuum is drawn to 5×10 -5 Below Pa, raise the substrate temperature to 850°C and maintain it for 30min, then lower the substrate temperature to 500°C.

[0035] Step III sputters a Ba layer on a substrate at 500°C, the sputtering pressure is 0.3Pa, the sputtering rate is 2.5nm / min, and the sputtering time is 2min. During this process, Ba reacts with the heated Si substrate to form BaSi 2 Seed layer, detected by Raman spectroscopy,...

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Abstract

A kind of BaSi of the present invention 2 The epitaxial growth method of thin film, specifically refers to a method of epitaxially growing BaSi on a single crystal Si substrate by magnetron co-sputtering technology. 2 Thin film approach involving BaSi 2 Thin film production method technical field. A BaSi 2 In the epitaxial growth method of the thin film, the crystal orientation of the single crystal silicon substrate is <111> or <100>, and the resistivity is 0.01-10000Ω.cm. Also include the following steps: I. single crystal silicon substrate cleaning; II. single crystal silicon substrate annealing; III.BaSi 2 Seed layer growth; IV. Ba, Si co-sputtering growth to get BaSi 2 epitaxial film. In sum, a kind of BaSi of the present invention 2 Compared with the existing technology, the epitaxial growth method of the thin film can realize the precise control of the stoichiometric ratio of the thin film, improve the quality of the thin film, have better epitaxial characteristics, and have faster growth rate and lower cost than the molecular beam epitaxy technology. advantage.

Description

Technical field: [0001] The present invention relates to BaSi 2 Thin film manufacturing method technical field, specifically refers to a kind of utilizing magnetron co-sputtering technology to epitaxially grow BaSi on a single crystal Si substrate 2 thin film method Background technique: [0002] With the increasingly severe energy and environmental problems, clean and efficient renewable energy has attracted more and more attention. As a new energy source, solar cells have always been a research hotspot. At present, solar cells dominated by crystalline silicon (monocrystalline silicon and polycrystalline silicon) occupy most of the market share, mainly due to the mature silicon purification process and crystalline silicon solar cell production process. In recent years, thin-film solar cells such as cadmium telluride (CdTe) and copper indium gallium selenide (CIGS) solar cells have also joined the ranks of competition, and their advantages lie in their low manufacturing c...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L21/363H01L31/032H01L31/20C30B23/02C30B29/10
CPCH01L21/02381H01L21/02521H01L21/02631H01L21/02439H01L31/20H01L31/032C30B29/10C30B23/02Y02P70/50
Inventor 杜伟杰杜锐沈岑张毅闻石旺舟
Owner SHANGHAI NORMAL UNIVERSITY
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