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Method for dynamically regulating and controlling metamaterial based on IGZO Schottky diode

A technology of Schottky diodes and metamaterials, applied in antennas, instruments, semiconductor devices, etc., can solve the problems of unsuitable flexible circuits, complicated manufacturing process, low modulation depth, etc., and achieve good uniformity, large area, and low electromagnetic loss Effect

Active Publication Date: 2019-12-31
SHANDONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

The present invention aims at problems such as low modulation depth, high cost, complex preparation process, and unsuitability for flexible circuits in various schemes of active regulation of existing metamaterials, and will have high electron mobility (10-50cm 2 / Vs), low electromagnetic loss, low cost, simple growth and preparation process and good uniformity of IGZO as the active layer, while preparing metal metamaterials, Schottky electrodes and ohmic electrodes are prepared to form a Schottky diode. Applying voltage to electrodes and Schottky electrodes to realize active regulation of electromagnetic properties of metamaterials

Method used

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  • Method for dynamically regulating and controlling metamaterial based on IGZO Schottky diode
  • Method for dynamically regulating and controlling metamaterial based on IGZO Schottky diode
  • Method for dynamically regulating and controlling metamaterial based on IGZO Schottky diode

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Embodiment 1

[0054] A method for dynamically regulating metamaterials based on IGZO Schottky diodes. IGZO Schottky diodes include substrates grown sequentially from bottom to top, Schottky electrodes, amorphous indium gallium zinc oxide active layers, and ohmic electrodes, including Proceed as follows:

[0055] (1) Using a metamaterial as the Schottky electrode, and making the amorphous InGaZnO active layer completely cover the capacitive structure in the metamaterial, the capacitive structure in the metamaterial is in contact with the non-crystalline The crystalline indium gallium zinc oxide active layer is combined to form a Schottky barrier;

[0056] The two metal plates of the capacitive structure in the metamaterial have a common electric potential, so Schottky barriers are formed on the surfaces of the two metal plates, so that the metamaterial is in a normal working mode.

[0057] The IGZO material covers the capacitive structure in the metamaterial, and the working mechanism of th...

Embodiment 2

[0060] According to a method for dynamically regulating metamaterials based on IGZO Schottky diodes described in Embodiment 1, the difference is that:

[0061] The capacitive structures in metamaterials have gaps smaller than 5 μm.

[0062] In order to ensure that the IGZO in the gap of the capacitive structure in the metamaterial is depleted under the condition of zero bias voltage, the capacitive structure in the metamaterial, that is, the size of the gap covered by IGZO should not exceed 5 μm.

Embodiment 3

[0064] According to a method for dynamically regulating metamaterials based on IGZO Schottky diodes described in Embodiment 1, the difference is that:

[0065] The material of the metamaterial includes Ti / Au / Pd. Ti acts as an adhesion layer to improve the bond strength between the metal and the substrate. Metal Au, as the main signal transmission layer, has excellent electrical conductivity. As the thickness of Au increases, the loss of the transmitted signal also decreases in the whole frequency band. The high work function metal Pd is combined with the amorphous InGaZnO active layer to form a Schottky barrier after forming an oxygen-rich environment after oxygen plasma bombardment. Metamaterials can be used as Schottky electrodes but are not limited to high work function metal Pd, and other metals that can form Schottky barriers with IGZO can be used.

[0066] Metamaterials include split-ring metamaterials, capacitive-inductive resonant metamaterials, split-ring metamateri...

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Abstract

The invention relates to a method for dynamically regulating and controlling a metamaterial based on an IGZO Schottky diode. The IGZO Schottky diode comprises a substrate, a Schottky electrode, an amorphous indium gallium zinc oxide active layer and an ohmic electrode which are successively grown from bottom to top. The method comprises the following steps: (1) taking the metamaterial as the Schottky electrode, making the amorphous indium gallium zinc oxide active layer completely cover a capacitive structure in the metamaterial, and combining the capacitive structure in the metamaterial withthe amorphous indium gallium zinc oxide active layer to form a Schottky barrier; and (2) dynamically regulating and controlling the metamaterial through the IGZO Schottky diode processed in the step (1). In the invention, great dynamic modulation of electromagnetic characteristics including transmittance, reflectivity and absorptivity of the metamaterial is realized; and simultaneously, a resonantfrequency of a metamaterial structure design is not affected, the method can be applied to various metamaterial devices and plasmon devices with metamaterial structures, and dynamic regulation and control of electromagnetic waves transmitted in space and the electromagnetic waves transmitted on a surface is achieved.

Description

technical field [0001] The invention relates to a method for dynamically regulating metamaterials based on IGZO Schottky diodes, and belongs to the fields of semiconductor device technology, electromagnetic field and microwave technology, and the like. Background technique [0002] Metamaterials, also known as "metamaterials", "metamaterials" or "metamaterials", refer to artificial composite structures or materials with extraordinary physical properties that natural materials do not have. Metamaterials are generally composed of artificially designed, periodically distributed, and subwavelength-sized metal or dielectric microstructures, and specific electromagnetic responses are achieved through the coupling between these microstructures and incident electromagnetic waves. In recent years, metamaterials whose electromagnetic properties can be artificially designed have filled the gaps of traditional materials. Combining these metamaterials with semiconductors, liquid crystals...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L29/872H01L29/24H01L29/47H01Q15/00G02F1/015
CPCH01L29/872H01L29/47H01L29/24H01Q15/0086G02F1/015G02F1/0156H01Q15/002H01L29/417H01L29/66969G02F2202/30H01L29/247
Inventor 张翼飞宋爱民凌昊天王卿璞
Owner SHANDONG UNIV
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