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A kind of black silicon/(gan) 1-x (zno) x Nanorod composite photoanode and preparation method thereof

A technology of nanorods and composite light, which is applied in chemical instruments and methods, electrodes, chemical/physical processes, etc., can solve the problems of high nitriding reaction temperature, small x value, narrow range, etc., and achieve short nitriding time, x The effect of large value and uniform distribution

Active Publication Date: 2022-05-17
DONGHUA UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The technical problem to be solved by the present invention is to provide a black silicon / (GaN) 1-x (ZnO) x Nanorod composite photoanode and preparation method thereof, to overcome prior art synthesis (GaN) 1-x (ZnO) x Defects where the required nitriding reaction temperature is too high, the x value is small and the range is narrow

Method used

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  • A kind of black silicon/(gan) <sub>1-x</sub> (zno) <sub>x</sub> Nanorod composite photoanode and preparation method thereof
  • A kind of black silicon/(gan) <sub>1-x</sub> (zno) <sub>x</sub> Nanorod composite photoanode and preparation method thereof
  • A kind of black silicon/(gan) <sub>1-x</sub> (zno) <sub>x</sub> Nanorod composite photoanode and preparation method thereof

Examples

Experimental program
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Effect test

Embodiment 1

[0039] (1) Ultrasonic wash the black silicon substrate in acetone, ethanol, and deionized water for 20 minutes, then prepare a 0.05mol / L potassium permanganate solution, and put the cleaned black silicon vertically into the potassium permanganate solution for soaking After 30 minutes, wash with water and dry. Add 1.3387g of zinc nitrate hexahydrate to 90ml of water to form a uniform solution of 0.05mol / L, then add 5ml of ammonia water and 5ml of ethanolamine and stir to form a mixed uniform solution. Put the cleaned black silicon vertically into the above mixed solution, react in a water bath at 85°C for 2 hours, wash with water, and dry to obtain black silicon / ZnO nanorods;

[0040] (2) Add 0.60g of zinc nitrate hexahydrate, 0.51g of gallium nitrate hydrate and 0.60g of urea into 100ml of water to prepare a uniformly mixed aqueous solution, then perform a hydrothermal reaction at 150°C for 15h, centrifugally wash, and dry in an oven at 50°C for 20h get ZnGa 2 o 4 powder. ...

Embodiment 2

[0047] (1) Ultrasonic wash the black silicon substrate in acetone, ethanol, and deionized water for 20 minutes, then prepare a 0.05mol / L potassium permanganate solution, and put the cleaned black silicon vertically into the potassium permanganate solution for soaking After 30 minutes, wash with water and dry. Add 0.8032g of zinc nitrate hexahydrate to 90ml of water to form a uniform solution of 0.03mol / L, then add 5ml of ammonia water and 2.5ml of ethanolamine and stir to form a mixed uniform solution. Put the cleaned black silicon vertically into the above mixed solution, react in a water bath at 95°C for 1 hour, wash with water, and dry to obtain black silicon / ZnO nanorods;

[0048] (2) Add 0.74g of zinc nitrate hexahydrate, 0.64g of gallium nitrate hydrate and 1.20g of urea into 100ml of water to prepare a uniformly mixed aqueous solution, then perform a hydrothermal reaction at 180°C for 12h, centrifugally wash, and dry in an oven at 70°C for 15h get ZnGa 2 o 4 powder. ...

Embodiment 3

[0054] (1) Ultrasonic wash the black silicon substrate in acetone, ethanol, and deionized water for 20 minutes, then prepare a 0.05mol / L potassium permanganate solution, and put the cleaned black silicon vertically into the potassium permanganate solution for soaking After 30 minutes, wash with water and dry. Add 1.8742g of zinc nitrate hexahydrate to 90ml of water to form a uniform solution of 0.07mol / L, then add 5ml of ammonia water and 10ml of ethanolamine and stir to form a mixed uniform solution. Put the cleaned black silicon vertically into the above mixed solution, react in a water bath at 70°C for 5 hours, wash with water, and dry to obtain black silicon / ZnO nanorods;

[0055] (2) Add 0.89g of zinc nitrate hexahydrate, 0.77g of gallium nitrate hydrate and 1.80g of urea into 100ml of water to prepare a uniformly mixed aqueous solution, then perform a hydrothermal reaction at 200°C for 10h, centrifugally wash, and dry in an oven at 90°C for 10h get ZnGa 2 o 4 powder. ...

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Abstract

The present invention relates to a kind of black silicon / (GaN) 1‑x (ZnO) x Nanorod composite photoanode and its preparation method. The method includes: preparation of black silicon / ZnO nanorods, black silicon / ZnO nanorods‑ZnGa 2 o 4 Nanocrystalline Fabrication, Black Silicon / (GaN) 1‑x (ZnO) x Fabrication of Nanorod Composite Photoanodes. The nitriding temperature of this method is low, and the nitriding time is short, and the obtained black silicon / (GaN) 1‑x (ZnO) x Nanorods have large x values ​​and high photocurrent densities.

Description

technical field [0001] The invention belongs to the field of photoelectrocatalytic anode and its preparation, in particular to a black silicon / (GaN) 1-x (ZnO) x Nanorod composite photoanode and its preparation method. Background technique [0002] In recent years, environmental and energy issues have become increasingly serious. Photoelectrocatalytic technology can use sunlight to split water into hydrogen and oxygen, and can degrade pollutants, so it has received great attention. In the past half century, the most widely and intensively studied photocatalytic material is TiO 2 Equal wide-bandgap semiconductors, but wide-bandgap semiconductors can only absorb ultraviolet light, and the utilization rate of sunlight is extremely low, so it is crucial to develop and utilize photocatalytic materials that respond to visible light. [0003] (GaN) 1-x (ZnO) x It is a stable solid solution formed by ZnO and GaN, and it is a new visible light catalytic material in recent years. ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B01J27/24B01J35/02C25B1/55C25B1/04C25B11/054C25B11/059C25B11/091B01J35/00
CPCB01J27/24C25B1/04C25B11/091B01J35/33B01J35/39Y02E60/36
Inventor 张青红孟颖王宏志李耀刚侯成义
Owner DONGHUA UNIV
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