A kind of silicon carbide/graphene composite nano-forest film material and its preparation method and application

A graphene composite, thin film material technology, applied in the direction of graphene, silicon carbide, carbon compounds, etc., can solve the problems of small electrode, reduced electrical activity, small contact activation area, etc., to achieve high conductivity and reduce internal resistance. , the effect of higher than capacitance

Active Publication Date: 2021-12-07
WUHAN UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, silicon carbide / graphene composite films are mainly prepared by chemical vapor deposition. However, graphene in composite films is mainly multi-layer structure (greater than 15 atomic layers), and the stacking of graphene layers significantly reduces the electrical activity. In addition, The graphene in the silicon carbide / graphene composite film prepared by the conventional CVD method is mainly distributed between the silicon carbide grains, and the contactable activation area between the graphenes is small, resulting in a small specific capacitance of the electrode.

Method used

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  • A kind of silicon carbide/graphene composite nano-forest film material and its preparation method and application

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Experimental program
Comparison scheme
Effect test

Embodiment 1

[0035] A silicon carbide / graphene composite nano-forest film electrode, the preparation method of which is as follows:

[0036] 1) Lofting: Put the cleaned substrate (single crystal silicon, 4 inches in diameter) into the laser chemical vapor deposition chamber, adjust the position of the substrate so that the laser irradiation covers the entire substrate;

[0037] 2) Vacuumize and introduce gas pressure adjustment: vacuumize the laser chemical vapor deposition chamber to below 10Pa, and introduce dilute gas H 2 , H 2The flow rate is 500 sccm, and the carrier Ar containing the precursor HMDS is introduced, the flow rate of the carrier Ar is 25 sccm, the HMDS flow rate is 6 sccm, and the deposition pressure is adjusted to 400 Pa and stabilized for 5 minutes;

[0038] 3) Deposition: Turn on the laser heating program, adjust the laser power to 290W, laser irradiation output wavelength to 1064nm, set the deposition target temperature to 1250°C, use an infrared thermal imager to m...

Embodiment 2

[0042] A silicon carbide / graphene composite nano-forest film electrode, the preparation method of which is as follows:

[0043] 1) Lofting: put the cleaned substrate (single crystal silicon) into the laser chemical vapor deposition chamber, adjust the position of the substrate so that the laser irradiation covers the entire substrate;

[0044] 2) Vacuumize and introduce gas pressure adjustment: vacuumize the laser chemical vapor deposition chamber to below 10Pa, and introduce dilute gas H 2 , H 2 The flow rate is 500 sccm, and the carrier Ar containing the precursor HMDS is introduced, the flow rate of the carrier Ar is 25 sccm, the HMDS flow rate is 6 sccm, and the deposition pressure is adjusted to 1600 Pa and stabilized for 5 minutes;

[0045] 3) Deposition: Turn on the laser heating program, adjust the power to 260W, laser irradiation output wavelength to 1064nm, set the deposition target temperature to 1200°C, use an infrared thermal imager to monitor the surface tempera...

Embodiment 3

[0049] The preparation method of silicon carbide / graphene composite nano-forest film electrode is as follows:

[0050] 1) Lofting: put the cleaned substrate (single crystal silicon) into the laser chemical vapor deposition chamber, adjust the position of the substrate so that the laser irradiation covers the entire substrate;

[0051] 2) Vacuumize and introduce gas pressure adjustment: vacuumize the laser chemical vapor deposition chamber to below 10Pa, and introduce dilute gas H 2 , H 2 The flow rate is 2000 sccm, and the carrier Ar containing the precursor HMDS is introduced, the flow rate of the carrier Ar is 25 sccm, the HMDS flow rate is 6 sccm, and the deposition pressure is adjusted to 400 Pa and stabilized for 5 minutes;

[0052] 3) Deposition: Turn on the laser heating program, adjust the power to 230W, laser irradiation output wavelength to 1064nm, set the deposition target temperature to 1150°C, use an infrared thermal imager to monitor the surface temperature of t...

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Abstract

The invention discloses a silicon carbide / graphene composite nano-forest film material and its preparation method and application. The film material is obtained by densely growing silicon carbide / graphene nano-whiskers on the surface of a substrate. The silicon carbide / graphene Graphene nanowhiskers are obtained by the epitaxial growth of graphene with 2 to 3 layers on the surface of silicon carbide whiskers. There is a coherent pore structure between silicon carbide / graphene nanowhiskers, forming a "nano forest" film. Material. The silicon carbide / graphene composite nano-forest film material provided by the invention has the characteristics of high electrical conductivity, large specific surface area, and stable physical and chemical properties, which greatly improves the double-layer capacitance of the negative electrode material, and shows good rate performance and cycle stability. .

Description

technical field [0001] The invention belongs to the technical field of energy storage thin film materials, in particular to a silicon carbide / graphene composite nano-forest thin film material and its preparation method and application. Background technique [0002] With the decrease of petroleum energy and the increasingly serious environmental pollution, the research of a new generation of clean energy storage devices has attracted more and more attention. Supercapacitors have the advantages of high power density, long cycle life, fast charging and discharging speed, and environmental friendliness. They are research hotspots in the field of electrochemical energy storage, and they are also the preferred power source for hybrid and electric vehicles in the future. They have broad application prospects. It is expected to become a new type of green energy. The performance of supercapacitors is closely related to the electrode materials used. [0003] SiC materials possess ex...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01G11/24H01G11/30H01G11/36H01G11/86C01B32/186C01B32/956
CPCC01B2204/04C01B32/186C01B32/956H01G11/24H01G11/30H01G11/36H01G11/86Y02E60/13
Inventor 涂溶孙清云章嵩张联盟
Owner WUHAN UNIV OF TECH
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