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Lead iodide single crystal nanowire and preparation method thereof

A technology of single crystal nanometer and lead iodide, applied in chemical instruments and methods, single crystal growth, nanotechnology, etc., can solve the problems of unfavorable photoelectric device preparation, low density, short length, etc., and achieve easy cutting and cleaning, and low cost , the effect of increasing the length

Inactive Publication Date: 2020-01-07
TAIYUAN UNIV OF TECH
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

The preparation method of methylamine lead iodide perovskite single crystal nanowires is as follows: step 1, use acetone, ethanol, deionized water to clean the substrate; step 2, use chemical vapor deposition to prepare lead iodide nanowires: deposition temperature 380 ℃ , the deposition time is 15 minutes; Step 3, the lead iodide nanowires are converted into methylamine lead iodide perovskite single crystal nanowires by chemical vapor deposition, but the methylamine lead iodide perovskite single crystal nanowires have a small density And the problem of short length, and the growth of nanowires is vertical growth, easy to break during transfer, which is not conducive to the preparation of later photoelectric devices

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  • Lead iodide single crystal nanowire and preparation method thereof
  • Lead iodide single crystal nanowire and preparation method thereof
  • Lead iodide single crystal nanowire and preparation method thereof

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Embodiment Construction

[0014] The materials used in the present invention are: lead iodide (PbI 2 ), glass slides, ethanol, isopropanol, deionized water, argon, hydrogen, dish soap. Its dosage is as follows:

[0015] Lead iodide: 0.15 g±0.001 g

[0016] Ethanol: 50ml±5ml

[0017] Isopropanol: 50ml±5ml

[0018] Deionized water: 100ml±5ml

[0019] Detergent: 2 ml±0.1 ml

[0020] Slide glass: 10mm×7mm

[0021] The invention relates to a preparation method of one-dimensional lead iodide nanowires, which is to heat-evaporate metal nano-islands on glass slides cleaned with deionized water, ethanol and isopropanol, and then use chemical vapor deposition to grow one-dimensional lead iodide nanowires.

[0022] The specific preparation method is as follows:

[0023] 1. Selected chemical substances

[0024] The chemical substances and materials required for preparation should be selected and controlled for quality, purity, concentration, fineness and precision:

[0025] Lead iodide: solid particles, ...

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Abstract

The invention relates to a metal halide single crystal nanowire and a manufacturing method thereof. According to the lead iodide single crystal nanowire, gold, silver or platinum nano island-shaped thin films are used for inducing chemical vapor deposition directional growth of the lead iodide nanowire, the appearance of the nanowire is in a one-dimensional line shape, the length of a single nanowire ranges from 100 micrometers to 200 micrometers, and the diameter of the single nanowire ranges from 100 nanometers to 300 nanometers. The invention further relates to a manufacturing method of themetal halide single crystal nanowire, and the length of the lead iodide nanowire subjected to chemical vapor deposition is greatly increased under the catalysis of a metal nano island.

Description

technical field [0001] The invention relates to a metal halide single crystal nanowire and a manufacturing method thereof. Background technique [0002] Lead iodide (PbI 2 ), as a precursor of perovskite materials widely used in research and application, is a semiconductor material with superior photoelectric properties. Lead iodide is a typical layered substance, and each layer is repeatedly stacked on the c-axis by I—Pb—I. As with other layered materials such as cadmium iodide (CdI 2 ), the layers are connected by weak van der Waals forces. Therefore, bulk PbI 2 Crystals can be exfoliated into monolayers. with molybdenum disulfide (MoS 2 ) and other two-dimensional layered transition metal dichalcogenides (TMDCs), the bulk structure of lead iodide is a direct band gap (2.28-2.5 eV) material, but the first calculation law of the band structure shows that the single Layer lead iodide has an indirect bandgap of 3.72 eV. Due to these unique optical and semiconducting p...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/12C30B25/00C30B29/62B82Y30/00B82Y40/00
CPCB82Y30/00B82Y40/00C30B25/005C30B29/12C30B29/62
Inventor 李国辉刘艳珍高芮崔艳霞冀婷王文艳郝玉英
Owner TAIYUAN UNIV OF TECH